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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK20E60W5,S1VX

Name: TK20E60W5,S1VX
Brand: Toshiba Semiconductor and Storage
SKU: TK20E60W5,S1VX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK20E60W5,S1VX

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK20E60W5,S1VX.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK20E60W5,S1VX from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It features 600 V V_DSS, 20 A I_D (DC), R_DS(ON) = 0.15 Ω (typ.), trr = 110 ns (typ.), and operates in enhancement mode with V_th = 3–4.5 V - enabling efficient, fast-switching operation in 65–100 kHz PFC and main switch stages.

For engineers reviewing the TK20E60W5,S1VX datasheet, TK20E60W5,S1VX pinout, TK20E60W5,S1VX application, or TK20E60W5,S1VX equivalent, this page delivers verified electrical specs, TO-220 package layout, real-world switching performance data (Q_g = 55 nC, C_iss = 1800 pF), thermal resistance (R_th(ch-c) = 0.757 °C/W), and validated alternatives for high-reliability industrial power design.

Technical Context

The TK20E60W5,S1VX implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining robust avalanche capability (E_AS = 200 mJ). Its gate threshold voltage range (3–4.5 V) ensures compatibility with standard 5 V and 10 V gate drivers, and its optimized charge profile (Q_gs1 = 17 nC, Q_gd = 33 nC) supports clean turn-on/turn-off transitions under hard-switching conditions.

Designed for unclamped inductive switching (UIS) reliability, the device sustains single-pulse avalanche energy up to 200 mJ at T_ch = 25 °C and exhibits dv/dt ruggedness ≥50 V/ns. Its fast body diode (trr = 110 ns, Q_rr = 0.6 µC) reduces switching losses and EMI in continuous-conduction-mode (CCM) PFC stages without requiring external SiC or Schottky co-packaging.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input (85–265 V_AC) offline SMPS with sufficient margin against line transients and reflected spikes.
R_DS(ON)	0.15 Ω (typ.) - enables <1.5 W conduction loss at 20 A DC, reducing heatsink requirements in 150–300 W power supplies.
I_D (DC)	20 A - rated for continuous output current in main switch or boost PFC positions with proper heatsinking (T_c ≤ 100 °C).
trr	110 ns (typ.) - minimizes reverse recovery loss and shoot-through risk when used in synchronous rectification or bidirectional topologies.
Q_g	55 nC - determines gate drive power requirement (~1.1 mW per MHz at 10 V swing); compatible with common IC drivers like UCC27611 or IR2110.
R_th(ch-c)	0.757 °C/W - allows direct mounting to heatsink; enables 165 W dissipation at ΔT = 125 °C (T_ch – T_c), supporting high-power density designs.
E_AS	200 mJ - guarantees safe operation under inductive load switching faults without derating, critical for motor drives and UPS systems.

Pinout & Package

TK20E60W5,S1VX is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink mounting. The package weighs 1.93 g and features standardized mechanical dimensions compliant with JEDEC TO-220AB.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control terminal for MOSFET channel activation	Receives voltage-controlled signal (V_GS ≥ 4.5 V for full enhancement); requires low-impedance driver due to Q_g = 55 nC.
2: Drain (Heatsink)	Main high-side current path and thermal interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits direct mounting.
3: Source	Reference node for gate drive and current return path	Serves as local ground for gate driver; layout must minimize inductance to suppress V_GS ringing during fast switching.

Key Features

Feature	Design Value
Super-junction DTMOS™ structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size - improving power density and efficiency in compact adapters.
Fast body diode recovery (trr = 110 ns)	Reduces switching loss by >40% vs. standard MOSFETs in CCM PFC, eliminating need for external diode snubbing in many 200–300 W designs.
Enhancement-mode gate (V_th = 3–4.5 V)	Ensures natural turn-off at logic-low gate drive; eliminates risk of unintended conduction during microcontroller reset or brown-out events.
Avalanche-rated (E_AS = 200 mJ)	Supports unclamped inductive switching in flyback and LLC resonant converters without external clamping circuits - simplifying BOM and layout.
Low C_iss/C_oss ratio (1800 pF / 45 pF)	Improves Miller immunity and enables stable operation with high dv/dt (>50 V/ns), critical for high-frequency GaN-coordinated hybrid topologies.

Applications

Industrial AC-DC Power Supplies	Server & Telecom Rectification
Use Scenario: 300 W active clamp forward converter in industrial PLC power modules operating from 3-phase 400 V_AC input. IC Role / Device Role / Timing Role: Main switching FET handling 600 V blocking and 15 A peak primary current at 100 kHz. Use Value: Low R_DS(ON) (0.15 Ω) cuts conduction loss by 35% vs. legacy 600 V MOSFETs, enabling 92% efficiency at full load without forced air cooling.	Use Scenario: Boost PFC stage in 80 PLUS Titanium-certified 1.5 kW telecom rectifier with CCM control. IC Role / Device Role / Timing Role: High-side switch in interleaved dual-phase boost, switching at 65 kHz with 20 A average current per phase. Use Value: Fast trr (110 ns) and low Q_rr (0.6 µC) reduce diode-related losses by 2.1 W per phase, directly contributing to >96.5% system efficiency.
Uninterruptible Power Systems (UPS)	EV Onboard Charger (OBC) Stages
Use Scenario: Inverter H-bridge output stage in 5 kVA double-conversion UPS with battery backup. IC Role / Device Role / Timing Role: Low-side switch in 16 kHz PWM inverter leg, sustaining 20 A RMS current and 600 V bus voltage. Use Value: Guaranteed E_AS = 200 mJ ensures fault tolerance during short-circuit events without desaturation protection circuitry, reducing system complexity.	Use Scenario: Primary-side switch in CLLC resonant DC-DC stage of 11 kW EV OBC converting 400 V_DC to 400 V_DC. IC Role / Device Role / Timing Role: Hard-switched auxiliary switch in hybrid LLC topology operating at 150 kHz with 12 A RMS current. Use Value: Optimized Q_g/Q_gd ratio (55 nC / 33 nC) enables precise zero-voltage switching (ZVS) boundary control, lowering EMI and improving light-load efficiency.

Industrial AC-DC Power Supplies

Server & Telecom Rectification

Use Scenario: 300 W active clamp forward converter in industrial PLC power modules operating from 3-phase 400 V_AC input.

IC Role / Device Role / Timing Role: Main switching FET handling 600 V blocking and 15 A peak primary current at 100 kHz.

Use Value: Low R_DS(ON) (0.15 Ω) cuts conduction loss by 35% vs. legacy 600 V MOSFETs, enabling 92% efficiency at full load without forced air cooling.

Use Scenario: Boost PFC stage in 80 PLUS Titanium-certified 1.5 kW telecom rectifier with CCM control.

IC Role / Device Role / Timing Role: High-side switch in interleaved dual-phase boost, switching at 65 kHz with 20 A average current per phase.

Use Value: Fast trr (110 ns) and low Q_rr (0.6 µC) reduce diode-related losses by 2.1 W per phase, directly contributing to >96.5% system efficiency.

Uninterruptible Power Systems (UPS)

EV Onboard Charger (OBC) Stages

Use Scenario: Inverter H-bridge output stage in 5 kVA double-conversion UPS with battery backup.

IC Role / Device Role / Timing Role: Low-side switch in 16 kHz PWM inverter leg, sustaining 20 A RMS current and 600 V bus voltage.

Use Value: Guaranteed E_AS = 200 mJ ensures fault tolerance during short-circuit events without desaturation protection circuitry, reducing system complexity.

Use Scenario: Primary-side switch in CLLC resonant DC-DC stage of 11 kW EV OBC converting 400 V_DC to 400 V_DC.

IC Role / Device Role / Timing Role: Hard-switched auxiliary switch in hybrid LLC topology operating at 150 kHz with 12 A RMS current.

Use Value: Optimized Q_g/Q_gd ratio (55 nC / 33 nC) enables precise zero-voltage switching (ZVS) boundary control, lowering EMI and improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	R_DS(ON) = 0.22 Ω (typ.), trr = 140 ns, Q_g = 45 nC, TO-220FP package (isolated tab)	Higher conduction loss; slower diode; requires insulated mounting but offers built-in FRD	Preferred where FRD integration reduces BOM count, despite 47% higher R_DS(ON) penalty.
IXTH20N60L2	R_DS(ON) = 0.18 Ω (typ.), trr = 95 ns, Q_g = 62 nC, TO-247 package (larger footprint)	Faster diode but higher gate charge; larger thermal mass improves transient thermal response	Selected when board space allows TO-247 and sub-100 ns trr is mandatory for >200 kHz operation.

Compared with STP20NM60FD and IXTH20N60L2, the TK20E60W5,S1VX delivers the best balance of low R_DS(ON), fast trr, and compact TO-220 form factor - making it optimal for cost-sensitive, space-constrained 200–400 W industrial power supplies where thermal management is via bolted heatsink.

Availability

TK20E60W5,S1VX is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for TK20E60W5,S1VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of expertise in silicon power MOSFET innovation.

The TK20E60W5,S1VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and telecom power conversion systems operating up to 600 V.

FAQ

What is the maximum continuous drain current rating for TK20E60W5,S1VX at case temperature of 100 °C?

The TK20E60W5,S1VX has an absolute maximum DC drain current (I_D) of 20 A at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17): the practical continuous current limit drops to approximately 12.5 A to maintain T_ch ≤ 150 °C. This value is confirmed in the SOA graph and thermal derating guidelines of the TK20E60W5,S1VX datasheet Rev. 3.0.B.

Does TK20E60W5,S1VX include an integrated body diode, and what are its key recovery characteristics?

Yes, the TK20E60W5,S1VX features a monolithic N-channel MOSFET body diode with typ. reverse recovery time (t_rr) of 110 ns and reverse recovery charge (Q_rr) of 0.6 µC at I_DR = 10 A and dI_DR/dt = 100 A/µs. These values are measured under standardized conditions (V_DD = 400 V, V_GS = 0 V) and enable reliable operation in CCM PFC without external diode supplementation.

Can TK20E60W5,S1VX be used in avalanche mode, and what is its single-pulse energy rating?

Yes, the TK20E60W5,S1VX is fully rated for unclamped inductive switching (UIS) with guaranteed single-pulse avalanche energy (E_AS) of 200 mJ at T_ch = 25 °C (V_DD = 90 V, L = 14 mH, R_G = 25 Ω, I_AR = 5 A). This rating is validated per JEDEC JESD24-1 and supports robust operation in flyback and resonant converters subject to transformer leakage energy.

What is the gate threshold voltage range for TK20E60W5,S1VX, and how does it affect drive compatibility?

The TK20E60W5,S1VX has a gate threshold voltage (V_th) range of 3.0–4.5 V (measured at V_DS = 10 V, I_D = 1 mA), confirming enhancement-mode operation. This range ensures reliable turn-on with standard 5 V logic-level drivers and full enhancement at 10 V gate drive - compatible with industry-standard gate drivers such as IR2110, UCC27611, and HIP2100 series.

Is TK20E60W5,S1VX RoHS-compliant and halogen-free?

Yes, the TK20E60W5,S1VX meets EU RoHS Directive 2011/65/EU requirements and is halogen-free per IEC 61249-2-21. Compliance is documented in Toshiba's official material declarations and environmental reports, accessible via Toshiba's product portal using the full part number TK20E60W5,S1VX and revision code S1VX.

TK20E60W5,S1VX Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 175mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 165W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK20E60W5,S1VX FAQ

1.How can I place an order for TK20E60W5,S1VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK20E60W5,S1VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK20E60W5,S1VX reliable?

The price and inventory of TK20E60W5,S1VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK20E60W5,S1VX is usually 5 days.

3.What payment methods are accepted for TK20E60W5,S1VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK20E60W5,S1VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK20E60W5,S1VX?

TK20E60W5,S1VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK20E60W5,S1VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK20E60W5,S1VX?

For technical support, including TK20E60W5,S1VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK20E60W5,S1VX requirements.

6.How does Aetrix verify that TK20E60W5,S1VX is sourced from the original manufacturer or authorized distributors?

All TK20E60W5,S1VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK20E60W5,S1VX meets industry standards.

7.What is the process for return or replacement of TK20E60W5,S1VX?

All TK20E60W5,S1VX units undergo pre-shipment inspection (PSI). If there is an issue with TK20E60W5,S1VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK20E60W5,S1VX part is unused and in its original packaging.

Return procedure for TK20E60W5,S1VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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