Toshiba Semiconductor and Storage TK20G60W,RVQ

Overview

TK20G60W from Toshiba is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, designed for high-voltage switching in offline SMPS and PFC stages. It delivers 600 V V_DSS, 20 A I_D (DC), R_DS(ON) = 0.13 Ω (typ.), and operates with V_th = 2.7–3.7 V - enabling efficient, gate-drive-simple operation in 400 V bus applications such as AC-DC adapters and industrial power supplies.

For engineers reviewing the TK20G60W datasheet, TK20G60W pinout, TK20G60W application, or TK20G60W equivalent, key selection criteria include its 600 V rating, low R_DS(ON) at 10 V gate drive, avalanche ruggedness (E_AS = 200 mJ), thermal resistance (R_th(ch-c) = 0.757 °C/W), and D2PAK package suitability for high-power dissipation in compact layouts.

Technical Context

This MOSFET employs Toshiba's DTMOS™ super-junction structure to achieve low on-resistance without sacrificing voltage rating or switching speed. Its enhancement-mode gate (V_th = 2.7–3.7 V) ensures reliable turn-on with standard 10 V logic-level drivers, while the integrated body diode supports continuous conduction mode (CCM) PFC and flyback snubberless designs.

Thermal design is enabled by the D2PAK package's low channel-to-case resistance (0.757 °C/W) and drain-connected heatsink tab. The device is rated for T_ch ≤ 150 °C and features guaranteed single-pulse avalanche energy of 200 mJ - critical for overvoltage transient handling in unregulated input stages.

Key Specifications

Pinout & Package

The TK20G60W is housed in a surface-mount D2PAK (TOSHIBA 2-11H1A) package with exposed drain pad for thermal coupling to PCB copper or heatsink. Weight is 1.59 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP20NM60FD and IXTH20N60L2, the TK20G60W offers superior R_DS(ON)/Q_g ratio in D2PAK, making it optimal for compact, high-efficiency 300–500 W PFC and flyback converters where thermal density and gate drive simplicity are critical.

Availability

TK20G60W is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, telecom rectifiers, and EV charger auxiliary power supplies requiring stable component supply and long-term lifecycle support.

Supply support for TK20G60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability power MOSFET design.

The TK20G60W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications in industrial and computing power supplies.

FAQ

What is the maximum continuous drain current for TK20G60W at case temperature 100 °C?

The TK20G60W has a DC drain current rating of 20 A at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17). Based on the guaranteed maximum PD–T_c curve (Fig. 8.15), power dissipation drops to ~75 W at 100 °C, yielding an approximate I_D limit of 13.5 A (using R_DS(ON) = 0.155 Ω max). Always verify with actual thermal design and layout.

Does TK20G60W have avalanche capability, and is it tested per JEDEC JESD24-1?

Yes, the TK20G60W specifies guaranteed single-pulse avalanche energy E_AS = 200 mJ (T_ch = 25 °C, V_DD = 90 V, L = 14 mH, R_G = 25 Ω, I_AR = 5 A). While Toshiba does not explicitly cite JEDEC JESD24-1 compliance in the TK20G60W datasheet, the test conditions align with industry-standard unclamped inductive switching (UIS) methodology used for qualifying ruggedness in power MOSFETs.

Can TK20G60W be driven directly by a microcontroller GPIO pin?

No - the TK20G60W requires a dedicated gate driver. Its total gate charge Q_g = 48 nC and gate threshold V_th = 2.7–3.7 V mean a typical 3.3 V or 5 V GPIO cannot provide sufficient voltage or current to switch the device reliably or quickly. A purpose-built gate driver (e.g., TC4420, UCC27531) delivering ≥10 V and ≥1 A peak current is required for proper operation of the TK20G60W.

What is the recommended PCB layout practice for thermal management of TK20G60W?

For optimal thermal performance, the TK20G60W's drain pad (Pin 2) must be connected to a large, multi-layer copper pour (≥200 mm² minimum) with ≥6 thermal vias (0.3 mm diameter, filled or plated) to internal ground/power planes. The D2PAK footprint should follow Toshiba's recommended land pattern (2-11H1A), and solder mask defined pads are advised to maximize solder volume and thermal transfer to the board.

Is TK20G60W RoHS compliant and halogen-free?

Yes - the TK20G60W meets EU RoHS Directive 2011/65/EU requirements. Per Toshiba's environmental documentation, it is also halogen-free (per IEC 61249-2-21), with brominated flame retardants and chlorine content below threshold limits. Full material declarations and certificates are available upon request from Toshiba or authorized distributors.