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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK20J60W,S1VE

Name: TK20J60W,S1VE
Brand: Toshiba Semiconductor and Storage
SKU: TK20J60W,S1VE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK20J60W,S1VE

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-3P-3, SC-65-3

Datasheet:: TK20J60W,S1VE.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK20J60W,S1VE from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It delivers 600 V V_DSS, 20 A I_D (DC), R_DS(ON) = 0.13 Ω (typ.), and operates with gate threshold voltage of 2.7–3.7 V - enabling efficient, thermally robust operation in industrial SMPS and PFC stages.

For engineers reviewing the TK20J60W,S1VE datasheet, TK20J60W,S1VE pinout, TK20J60W,S1VE application, or TK20J60W,S1VE equivalent, key selection criteria include avalanche ruggedness (E_AS = 200 mJ), low C_iss (1680 pF), fast turn-on time (50 ns), and TO-3P(N) package thermal performance (R_th(ch-c) = 0.757 °C/W).

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining high dv/dt immunity (≥50 V/ns) and robust unclamped inductive switching capability. Its enhancement-mode gate structure ensures reliable turn-on at standard 10 V drive with minimal gate charge (Q_g = 48 nC).

The integrated body diode exhibits t_rr = 330 ns and Q_rr = 2.9 µC under specified conditions, supporting quasi-resonant and hard-switched topologies where reverse recovery behavior critically impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in offline SMPS
R_DS(ON)	0.13 Ω (typ.) - reduces conduction loss in 20 A continuous switching applications
I_D (DC)	20 A - enables use in 300–500 W power stages without parallel devices
E_AS	200 mJ - withstands energy from inductive load switching without failure
Q_g	48 nC - allows efficient gate driving with standard 1–2 A peak gate drivers
C_iss	1680 pF - balances switching speed and EMI control in 65–100 kHz designs
t_on	50 ns - supports high-frequency operation while limiting shoot-through risk

Pinout & Package

TK20J60W,S1VE is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring isolated heatsink-compatible drain tab and 3-terminal configuration optimized for high-power thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives 10 V logic-level drive; V_th range (2.7–3.7 V) ensures compatibility with standard PWM controllers
2: Drain (Heatsink)	High-side power terminal	Electrically connected to metal tab - must be electrically isolated from PCB but thermally coupled to heatsink
3: Source	Reference node / current return	Serves as common reference for gate drive and current sensing; connects to low-side switch or ground-referenced output

Key Features

Feature	Design Value
Super-junction DTMOS™ IV structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size
Low gate charge (Q_g = 48 nC)	Reduces driver power loss and enables faster switching transitions without excessive ringing
High dv/dt immunity (≥50 V/ns)	Prevents false turn-on during high-slew-rate switching in bridge configurations
Guaranteed avalanche energy (E_AS = 200 mJ)	Eliminates need for external snubbers in inductive load circuits like PFC chokes
TO-3P(N) thermal resistance (R_th(ch-c) = 0.757 °C/W)	Supports >100 W dissipation with moderate heatsinking - critical for compact industrial PSU designs

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server PSUs operating at 100 kHz. IC Role / Device Role / Timing Role: High-side main switch in LLC resonant half-bridge, handling 20 A RMS current at 600 V bus. Use Value: Low R_DS(ON) and high E_AS reduce conduction loss and eliminate avalanche-related failures during transient overloads.	Use Scenario: Inverter leg switching in 3-phase 7.5 kW HVAC drives with active front-end rectification. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 15 kHz hard-switched inverter stage, driven by isolated gate driver. Use Value: Fast t_on/t_off and low Q_g enable precise PWM timing control while minimizing switching loss at elevated temperatures.
Telecom Rectifier	Renewable Energy Inverter
Use Scenario: Active clamp forward converter in -48 V telecom rectifier modules with 200 kHz switching frequency. IC Role / Device Role / Timing Role: Main power switch managing 18 A DC output with tight regulation under dynamic load steps. Use Value: Stable V_th and low C_iss ensure consistent turn-on timing across temperature and line variations, improving regulation accuracy.	Use Scenario: DC-link switching in 5 kW solar string inverter with unidirectional boost + full-bridge inversion. IC Role / Device Role / Timing Role: Boost switch in interleaved PFC stage, conducting 20 A average current with 600 V blocking requirement. Use Value: Body diode t_rr = 330 ns and Q_rr = 2.9 µC minimize reverse recovery loss and associated EMI in high-efficiency MPPT tracking.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server PSUs operating at 100 kHz.

IC Role / Device Role / Timing Role: High-side main switch in LLC resonant half-bridge, handling 20 A RMS current at 600 V bus.

Use Value: Low R_DS(ON) and high E_AS reduce conduction loss and eliminate avalanche-related failures during transient overloads.

Use Scenario: Inverter leg switching in 3-phase 7.5 kW HVAC drives with active front-end rectification.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 15 kHz hard-switched inverter stage, driven by isolated gate driver.

Use Value: Fast t_on/t_off and low Q_g enable precise PWM timing control while minimizing switching loss at elevated temperatures.

Telecom Rectifier

Renewable Energy Inverter

Use Scenario: Active clamp forward converter in -48 V telecom rectifier modules with 200 kHz switching frequency.

IC Role / Device Role / Timing Role: Main power switch managing 18 A DC output with tight regulation under dynamic load steps.

Use Value: Stable V_th and low C_iss ensure consistent turn-on timing across temperature and line variations, improving regulation accuracy.

Use Scenario: DC-link switching in 5 kW solar string inverter with unidirectional boost + full-bridge inversion.

IC Role / Device Role / Timing Role: Boost switch in interleaved PFC stage, conducting 20 A average current with 600 V blocking requirement.

Use Value: Body diode t_rr = 330 ns and Q_rr = 2.9 µC minimize reverse recovery loss and associated EMI in high-efficiency MPPT tracking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NM60ND	R_DS(ON) = 0.22 Ω (typ.), higher Q_g = 65 nC, same 600 V/20 A rating	Lower switching efficiency at >80 kHz due to higher C_iss (1950 pF) and Q_g	Preferred where cost sensitivity outweighs 5–7% efficiency loss in <65 kHz designs
IXTH20N60L2	Lower R_DS(ON) = 0.11 Ω, but E_AS = 120 mJ and no guaranteed avalanche rating	Not suitable for unclamped inductive loads; requires external clamping in PFC or flyback	Appropriate only when layout includes active clamping or soft-switching topology

Compared with STW20NM60ND and IXTH20N60L2, TK20J60W,S1VE offers superior avalanche ruggedness and balanced switching characteristics - making it the preferred choice for industrial SMPS where reliability under overload and transient stress is non-negotiable.

Availability

TK20J60W,S1VE is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for TK20J60W,S1VE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

TK20J60W,S1VE belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and infrastructure power systems.

FAQ

What is the maximum continuous drain current rating for TK20J60W,S1VE at T_c = 25°C?

The TK20J60W,S1VE is rated for 20 A DC drain current at case temperature (T_c) = 25°C per its Absolute Maximum Ratings table. Derating is required above this temperature - at T_c = 100°C, the usable I_D drops to approximately 12 A based on the PD vs. T_c curve (Fig. 8.15). Always verify thermal design using R_th(ch-c) = 0.757 °C/W.

Does TK20J60W,S1VE have a fully characterized body diode for synchronous rectification?

No - the TK20J60W,S1VE body diode is not optimized for synchronous rectification. Its reverse recovery time (t_rr = 330 ns) and Q_rr = 2.9 µC are specified for freewheeling in hard-switched topologies, not zero-voltage switching. For synchronous rectification, discrete Schottky or dedicated SR controllers paired with low-Q_rr MOSFETs are recommended instead of relying on TK20J60W,S1VE's intrinsic diode.

Is TK20J60W,S1VE RoHS compliant and lead-free?

Yes - TK20J60W,S1VE is RoHS compliant and lead-free, as confirmed by Toshiba's marking notation: underlined Lot No. indicates [[G]]/RoHS COMPATIBLE. The device meets Directive 2011/65/EU requirements, and Pb-free soldering profiles compatible with JEDEC J-STD-020 are validated per Toshiba's packaging specifications.

What is the gate threshold voltage range for TK20J60W,S1VE, and how does it affect drive circuit design?

The TK20J60W,S1VE has a gate threshold voltage (V_th) range of 2.7–3.7 V at V_DS = 10 V and I_D = 1 mA. This ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers, but full enhancement requires V_GS ≥ 10 V. Designers must ensure gate drive voltage exceeds 4.5 V minimum to avoid linear-mode operation and thermal runaway under load.

Can TK20J60W,S1VE be used in avalanche mode for energy recovery applications?

Yes - TK20J60W,S1VE is fully specified for single-pulse avalanche operation with E_AS = 200 mJ (T_ch = 25°C). Its guaranteed avalanche rating allows controlled use in snubberless flyback or active clamp circuits, provided pulse width, repetition rate, and channel temperature remain within limits defined in Fig. 8.14 and the derating guidelines in Toshiba's Reliability Handbook.

TK20J60W,S1VE Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-3P-3, SC-65-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1680 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 165W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P(N)

TK20J60W,S1VE FAQ

1.How can I place an order for TK20J60W,S1VE through Aetrix?

Please submit a Request for Quotation (RFQ) for TK20J60W,S1VE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK20J60W,S1VE reliable?

The price and inventory of TK20J60W,S1VE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK20J60W,S1VE is usually 5 days.

3.What payment methods are accepted for TK20J60W,S1VE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK20J60W,S1VE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK20J60W,S1VE?

TK20J60W,S1VE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK20J60W,S1VE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK20J60W,S1VE?

For technical support, including TK20J60W,S1VE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK20J60W,S1VE requirements.

6.How does Aetrix verify that TK20J60W,S1VE is sourced from the original manufacturer or authorized distributors?

All TK20J60W,S1VE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK20J60W,S1VE meets industry standards.

7.What is the process for return or replacement of TK20J60W,S1VE?

All TK20J60W,S1VE units undergo pre-shipment inspection (PSI). If there is an issue with TK20J60W,S1VE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK20J60W,S1VE part is unused and in its original packaging.

Return procedure for TK20J60W,S1VE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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