Toshiba Semiconductor and Storage TK20N60W5,S1VF

Overview

TK20N60W5,S1VF from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline power supplies. It delivers 600 V drain-source breakdown voltage, 20 A DC drain current, and low 0.15 Ω typical R_DS(ON), enabling efficient operation in 65–100 kHz PFC and main-switch stages of AC-DC adapters and industrial SMPS.

For engineers reviewing the TK20N60W5,S1VF datasheet, TK20N60W5,S1VF pinout, TK20N60W5,S1VF application, or TK20N60W5,S1VF equivalent, key selection criteria include its 110 ns typ. reverse recovery time, 55 nC total gate charge, TO-247 package thermal performance (R_th(ch-c) = 0.757 °C/W), and 200 mJ single-pulse avalanche energy rating.

Technical Context

This device implements Toshiba's DTMOS™ V technology-optimized for reduced specific on-resistance and fast body diode recovery. Its enhancement-mode gate threshold (3–4.5 V) ensures compatibility with standard 10 V gate drivers, while the integrated fast-recovery body diode eliminates need for external antiparallel diodes in hard-switched topologies.

The TK20N60W5,S1VF operates with guaranteed channel temperature up to 150 °C and supports unclamped inductive switching (UIS) with 5 A avalanche current. Its dynamic parameters-including 1800 pF input capacitance and 5.5 pF reverse transfer capacitance at 300 V-are calibrated for stable dv/dt ruggedness ≥50 V/ns under realistic 400 V bus conditions.

Key Specifications

Pinout & Package

TK20N60W5,S1VF is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated drain tab for direct heatsink mounting and 6.15 g typical mass. The three-terminal configuration supports high-current PCB routing and thermal management via case-conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20NK60Z and IPP60R099C7, the TK20N60W5,S1VF offers balanced trade-offs: lowest gate charge among 20 A/600 V devices, superior dv/dt immunity, and proven avalanche robustness-making it optimal for space-constrained, thermally demanding telecom and industrial power systems where reliability trumps marginal R_DS(ON) reduction.

Availability

TK20N60W5,S1VF is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for TK20N60W5,S1VF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, reliability, and industrial-grade robustness.

The TK20N60W5,S1VF belongs to Toshiba's DTMOS™ V super-junction MOSFET family, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial infrastructure equipment.

FAQ

What is the maximum continuous junction temperature for the TK20N60W5,S1VF?

The TK20N60W5,S1VF has a maximum channel (junction) temperature rating of 150 °C, as specified in its Absolute Maximum Ratings table. This limit applies under all operating conditions, including DC and pulsed drain current. Thermal design must ensure that actual channel temperature-calculated using R_th(ch-c) = 0.757 °C/W and measured case temperature-does not exceed this value to maintain long-term reliability and avoid degradation of R_DS(ON) or threshold voltage.

Does the TK20N60W5,S1VF have an integrated body diode, and what are its key recovery characteristics?

Yes, the TK20N60W5,S1VF includes an integrated fast-recovery body diode inherent to its vertical N-channel MOSFET structure. Its reverse recovery time (t_rr) is 110 ns (typ.) at I_DR = 10 A and dI_DR/dt = 100 A/µs, with reverse recovery charge (Q_rr) of 0.6 µC (typ.). These values are measured under standardized conditions (V_DD = 400 V, V_GS = 0 V) and enable use in hard-switched topologies without external diode supplementation.

Can the TK20N60W5,S1VF be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK20N60W5,S1VF is rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 200 mJ at T_ch = 25 °C. This rating is validated per JEDEC JESD24-11 and allows the device to safely absorb transient inductive energy during fault conditions such as short-circuit or overload, provided the channel temperature remains within limits and pulse duration is controlled per test condition (L = 14 mH, I_AR = 5 A).

What is the gate threshold voltage range for the TK20N60W5,S1VF, and how does it affect drive compatibility?

The TK20N60W5,S1VF has a gate threshold voltage (V_th) range of 3.0 V to 4.5 V, measured at V_DS = 10 V and I_D = 1 mA. This enhancement-mode specification ensures reliable turn-off at 0 V gate bias and clean turn-on with industry-standard 10 V gate drivers (e.g., IR2110, UCC27531). The relatively narrow V_th window reduces risk of partial turn-on during noise coupling and supports stable operation across temperature and process variation.

Is the TK20N60W5,S1VF RoHS compliant, and what marking indicates compliance?

Yes, the TK20N60W5,S1VF is RoHS compliant. Per Toshiba's marking convention, RoHS-compliant units feature an underlined lot number on the device surface, accompanied by the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-underlined markings indicate lead-containing versions. Environmental compliance documentation-including EU Directive 2011/65/EU certification-is available through Toshiba's official sales channels and should be verified for specific date codes prior to high-volume deployment.