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Toshiba Semiconductor and Storage TK20V60W5,LVQ
- Part No.:
- TK20V60W5,LVQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 4-VSFN Exposed Pad
- Datasheet:
-
TK20V60W5,LVQ.pdf
- Description:
- MOSFET N-CH 600V 20A 4DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,812
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Product details
Overview
TK20V60W5,LVQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ power MOSFET designed for high-efficiency switching in 600 V, 20 A applications. It features RDS(ON) = 0.156 Ω (typ.), fast reverse recovery time (trr = 110 ns), and enhancement-mode gate threshold (Vth = 3–4.5 V), enabling robust operation in hard-switched PFC and DC-DC converters.
For engineers reviewing the TK20V60W5,LVQ datasheet, TK20V60W5,LVQ pinout, TK20V60W5,LVQ application, or TK20V60W5,LVQ equivalent, key selection considerations include its DFN8x8 package with dual-source configuration, avalanche energy rating (EAS = 200 mJ), channel-to-case thermal resistance (Rth(ch-c) = 0.8 °C/W), and MOSFET dv/dt ruggedness (≥50 V/ns).
Technical Context
This device implements Toshiba's DTMOS™ IV process, optimizing cell layout and trench structure to reduce RDS(ON) × Qg figure-of-merit while maintaining low gate charge (Qg = 55 nC) and controlled switching behavior. Its internal diode exhibits trr = 110 ns and Qrr = 0.6 µC under defined conditions, supporting ZVS-capable topologies.
The DFN8x8 package integrates a thermally enhanced drain heatsink (Pin 5) and separates signal return (Source1, Pin 2) from main current path (Source2, Pins 3–4), reducing gate loop inductance and improving EMI performance in high-frequency SMPS designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC bus with margin. |
| RDS(ON) | 0.156 Ω (typ.) - Enables <1.5 W conduction loss at 20 A DC, critical for high-power density converters. |
| trr | 110 ns (typ.) - Reduces switching losses and voltage overshoot during diode commutation in bridge-leg configurations. |
| EAS | 200 mJ - Withstands single-pulse avalanche events without failure, enhancing system robustness during transient overvoltage. |
| Rth(ch-c) | 0.8 °C/W - Allows direct thermal coupling to heatsink via exposed drain pad, enabling >100 W continuous dissipation with moderate cooling. |
| Qg | 55 nC - Balances gate drive strength and switching speed; compatible with standard 1-A peak gate drivers at 100–300 kHz. |
| dv/dt ruggedness | ≥50 V/ns - Prevents false turn-on during high dV/dt transients in half-bridge or LLC resonant circuits. |
Pinout & Package
Package: DFN8x8 (TOSHIBA designation: 2-8T1A), surface-mount, thermally enhanced with exposed drain pad (Pin 5). Weight: 0.175 g (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires ≤±30 V gate-source voltage; Vth = 3–4.5 V ensures reliable turn-on with 10 V drive. |
| 2 | Source1 | Signal ground reference for gate driver return path; must be used for gate loop closure to minimize noise coupling. |
| 3, 4 | Source2 | Main current return path; parallel connection reduces source inductance and improves current sharing in high-di/dt operation. |
| 5 | Drain (Heatsink) | High-current output and thermal interface; electrically connected to drain; soldered directly to PCB copper pour for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| DTMOS™ IV trench-gate structure | Reduces RDS(ON) × Qg by ~25% vs. prior generation, improving efficiency in 100–500 kHz hard-switched converters. |
| Dual-source pin configuration | Separates gate return (Source1) from power return (Source2), lowering gate loop inductance and suppressing oscillation during fast switching. |
| Fast body diode (trr = 110 ns) | Enables use in synchronous rectification and bidirectional topologies without external Schottky diodes in medium-frequency ranges. |
| Avalanche-rated (EAS = 200 mJ) | Eliminates need for external clamping in flyback or forward converters subjected to leakage inductance spikes. |
| MOSFET dv/dt ruggedness ≥50 V/ns | Prevents spurious turn-on in high-side switching applications where drain node swings rapidly (e.g., half-bridge leg). |
Applications
| Server PSU Primary Switch | Industrial AC-DC Front-End |
|---|---|
Use Scenario: High-density 3 kW server power supply operating at 100–300 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC input and delivering regulated 12 V/200 A output. Use Value: Low RDS(ON) minimizes conduction loss; fast trr and high dv/dt immunity ensure stable operation during zero-voltage switching transitions. |
Use Scenario: 1.5 kW industrial AC-DC converter for PLC or motor drive front-end with universal 85–264 V AC input. IC Role / Device Role / Timing Role: Boost PFC switch operating in continuous conduction mode (CCM) at 65–100 kHz. Use Value: Avalanche rating absorbs line surge energy; dual-source layout suppresses EMI in noisy factory environments. |
| Solar Microinverter DC-Link Switch | EV On-Board Charger (OBC) PFC Stage |
Use Scenario: 300–500 W photovoltaic microinverter interfacing 30–60 V DC panel output to 230 V AC grid. IC Role / Device Role / Timing Role: DC-link switch in interleaved boost stage, switching at 150–250 kHz. Use Value: DFN8x8 package enables compact thermal design; low Qg allows efficient gate driving with integrated controllers. |
Use Scenario: 6.6 kW OBC with two-phase interleaved PFC stage operating at 70 kHz under 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in each PFC phase, requiring high reliability under thermal cycling. Use Value: Rth(ch-c) = 0.8 °C/W supports junction temperature control below 125 °C even at full load; RoHS-compliant packaging meets automotive qualification requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NK60Z | 600 V, 20 A, RDS(ON) = 0.22 Ω (typ.), TO-247 package, no specified trr or dv/dt rating. | Higher conduction loss; larger footprint; lacks fast body diode and dv/dt ruggedness specs needed for high-frequency PFC. | Preferred only when through-hole mounting or legacy board compatibility is required. |
| IXFH20N60P | 600 V, 20 A, RDS(ON) = 0.20 Ω (typ.), TO-247 package, trr = 180 ns, EAS = 150 mJ. | Slower reverse recovery and lower avalanche capability; higher thermal resistance limits power density. | Acceptable for lower-frequency (<50 kHz) applications where thermal budget permits larger heatsinking. |
Compared with STW20NK60Z and IXFH20N60P, the TK20V60W5,LVQ delivers superior power density via its DFN8x8 package, lower RDS(ON), faster trr, and guaranteed dv/dt ruggedness-making it optimal for space-constrained, high-frequency, high-reliability industrial and renewable energy systems.
Availability
TK20V60W5,LVQ is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC front-ends, and solar microinverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for TK20V60W5,LVQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon power MOSFET innovation.
The TK20V60W5,LVQ belongs to Toshiba's DTMOS™ IV family, engineered specifically for high-efficiency, high-reliability switching in industrial, computing, and renewable energy power conversion systems.
FAQ
What is the maximum continuous drain current rating for TK20V60W5,LVQ?
The TK20V60W5,LVQ has a DC drain current rating of 20 A at Tc = 25 °C. Derating applies above this case temperature; at Tc = 100 °C, the usable ID drops to approximately 12 A based on its 156 W power dissipation limit and thermal resistance profile.
Does TK20V60W5,LVQ have a built-in body diode, and what are its key parameters?
Yes, TK20V60W5,LVQ includes an integrated body diode with reverse recovery time trr = 110 ns (typ.), reverse recovery charge Qrr = 0.6 µC, and peak reverse recovery current Irr = 10 A under specified test conditions (IDR = 10 A, dIDR/dt = 100 A/µs).
How should the dual-source pins (2, 3, 4) of TK20V60W5,LVQ be connected on the PCB?
Pin 2 (Source1) must be used exclusively as the gate driver return path and tied to the controller ground. Pins 3 and 4 (Source2) carry main current and should be routed with low-inductance copper pours to the bulk capacitor negative terminal. Separating these paths prevents gate oscillation and improves EMI performance.
Is TK20V60W5,LVQ suitable for avalanche operation, and what is its rated single-pulse energy?
Yes, TK20V60W5,LVQ is fully rated for single-pulse avalanche operation with EAS = 200 mJ (Tch = 25 °C). This rating is validated per JEDEC standards and allows safe operation during inductive switching transients without external snubbers in properly designed circuits.
What is the gate threshold voltage range for TK20V60W5,LVQ, and how does it affect drive requirements?
The gate threshold voltage Vth for TK20V60W5,LVQ is specified as 3–4.5 V (VDS = 10 V, ID = 1 mA), confirming enhancement-mode operation. A 10 V gate drive ensures full enhancement and low RDS(ON); 5 V logic-level drives are insufficient for rated conduction performance.
TK20V60W5,LVQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- 4-VSFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 156W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN-EP (8x8)
TK20V60W5,LVQ FAQ
1.How can I place an order for TK20V60W5,LVQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK20V60W5,LVQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK20V60W5,LVQ reliable?
The price and inventory of TK20V60W5,LVQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK20V60W5,LVQ is usually 5 days.
3.What payment methods are accepted for TK20V60W5,LVQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK20V60W5,LVQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK20V60W5,LVQ?
TK20V60W5,LVQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK20V60W5,LVQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK20V60W5,LVQ?
For technical support, including TK20V60W5,LVQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK20V60W5,LVQ requirements.
6.How does Aetrix verify that TK20V60W5,LVQ is sourced from the original manufacturer or authorized distributors?
All TK20V60W5,LVQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK20V60W5,LVQ meets industry standards.
7.What is the process for return or replacement of TK20V60W5,LVQ?
All TK20V60W5,LVQ units undergo pre-shipment inspection (PSI). If there is an issue with TK20V60W5,LVQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK20V60W5,LVQ part is unused and in its original packaging.
Return procedure for TK20V60W5,LVQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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