Toshiba Semiconductor and Storage TK20V60W,LVQ

Overview

TK20V60W from Toshiba is a silicon N-channel MOSFET using DTMOS™ Super Junction structure, rated for 600 V drain-source voltage and 20 A DC drain current in DFN8x8 package. It delivers low R_DS(ON) of 0.136 Ω (typ.) at V_GS = 10 V and operates with gate threshold voltage of 2.7–3.7 V, enabling efficient switching in high-voltage AC-DC power supplies.

For engineers reviewing the TK20V60W datasheet, TK20V60W pinout, TK20V60W application, or TK20V60W equivalent, this device is selected for high-efficiency, high-voltage SMPS designs where thermal performance, avalanche ruggedness (E_AS = 200 mJ), and fast switching (t_on = 50 ns, t_off = 100 ns) are critical to system reliability and size reduction.

Technical Context

The TK20V60W employs Toshiba's DTMOS™ IV Super Junction architecture to achieve low conduction loss while maintaining robust switching behavior. Its gate charge profile (Q_g = 48 nC, Q_gd = 22 nC) supports high-frequency operation up to several hundred kHz in resonant and hard-switched topologies.

Thermal design is enabled by its DFN8x8 package with exposed drain (pin 5) acting as heatsink and low channel-to-case thermal resistance (R_th(ch-c) = 0.8 °C/W). The dual-source configuration (pins 2 and 3/4) separates signal return (source1) from main current path (source2), reducing gate loop inductance and improving EMI control.

Key Specifications

Pinout & Package

Package: DFN8x8 (TOSHIBA 2-8T1A), surface-mount, thermally enhanced with exposed drain pad (pin 5) serving as primary heatsink. Weight: 0.175 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW20N60DM6 and IXTH20N60L2, the TK20V60W offers superior power density via DFN8x8 packaging, lower conduction loss, and intentional separation of gate and power source paths-critical for meeting CISPR-32 Class B EMI limits in space-constrained power modules.

Availability

TK20V60W is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for TK20V60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and reliability for industrial and infrastructure markets.

The TK20V60W belongs to Toshiba's DTMOS™ IV Super Junction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and electric vehicle charging systems.

FAQ

What is the maximum continuous drain current rating for TK20V60W?

The TK20V60W has a DC drain current rating of 20 A at T_c = 25 °C. This value decreases with increasing case temperature per the SOA curve; at T_c = 100 °C, the usable I_D drops to approximately 12 A. Derating must follow the guaranteed maximum PD vs. T_c curve in Figure 8.15 of the TK20V60W datasheet to ensure long-term reliability.

Does TK20V60W support avalanche energy handling, and what is its rated value?

Yes, the TK20V60W is fully rated for single-pulse avalanche operation with E_AS = 200 mJ (T_ch = 25 °C, V_DD = 90 V, L = 14 mH, R_G = 25 Ω, I_AR = 5 A). This specification is guaranteed per Toshiba's test conditions and enables robustness against inductive switching transients without external clamping in properly designed PFC or flyback circuits.

How should the dual-source pins (2, 3, 4) of TK20V60W be connected in PCB layout?

Pin 2 (Source1) must serve exclusively as the gate driver return path and connect directly to the driver IC ground with minimal trace length. Pins 3 and 4 (Source2) carry full 20 A load current and must be routed to the main power ground plane using wide copper pours. Mixing these paths causes gate oscillation and increased EMI; the TK20V60W datasheet explicitly mandates this separation for stable operation.

What is the gate threshold voltage range for TK20V60W, and how does it affect drive compatibility?

The TK20V60W has a gate threshold voltage V_th of 2.7–3.7 V (V_DS = 10 V, I_D = 1 mA), confirming enhancement-mode behavior compatible with standard 5 V and 10 V gate drivers. This range ensures reliable turn-on above typical logic-high levels while preventing accidental activation from noise or leakage, making it suitable for isolated gate drivers like Si823x or non-isolated controllers such as UCC28070.

Is TK20V60W RoHS compliant and halogen-free?

Yes, the TK20V60W meets RoHS Directive 2011/65/EU requirements and is halogen-free per JESD209-4. Toshiba confirms compliance in its official environmental documentation, and the device carries the appropriate marking per JEDEC standards. For full material declarations and REACH SVHC status, refer to Toshiba's official product page or contact their environmental support team directly.