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Toshiba Semiconductor and Storage TK22A10N1,S4X
- Part No.:
- TK22A10N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK22A10N1,S4X.pdf
- Description:
- MOSFET N-CH 100V 22A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
TK22A10N1,S4X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drivers. It delivers 52 A DC drain current at Tc = 25°C, features 11.5 mΩ typical RDS(ON) at VGS = 10 V, and supports 100 V drain-source breakdown voltage - enabling efficient operation in 48 V industrial power rails.
For engineers reviewing the TK22A10N1,S4X datasheet, TK22A10N1,S4X pinout, TK22A10N1,S4X application, or TK22A10N1,S4X equivalent, key selection criteria include its TO-220SIS package thermal performance (Rth(ch-c) = 4.16 °C/W), avalanche energy rating (EAS = 48 mJ), and gate charge profile (Qg = 28 nC) for optimized hard-switching efficiency.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance while maintaining robust avalanche capability and fast switching dynamics. Its enhancement-mode threshold voltage (2.0–4.0 V) ensures reliable gate drive compatibility with standard 5 V and 10 V logic-level controllers.
Designed for unidirectional high-power switching, it integrates an intrinsic body diode with 54 ns reverse recovery time and 94 nC Qrr, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports input rails up to 48 V nominal with ≥2× safety margin against transients. |
| RDS(ON) (typ.) | 11.5 mΩ at VGS = 10 V - Enables <1.3 W conduction loss at 11 A DC, critical for thermal management in compact power stages. |
| ID (DC) | 52 A at Tc = 25°C - Sustains continuous load current in high-power SMPS without forced air cooling when mounted on ≥10 cm² copper area. |
| EAS | 48 mJ - Withstands single-pulse inductive energy in motor drive or converter fault conditions without failure. |
| Qg | 28 nC - Optimized for gate driver ICs delivering ≥1 A peak current; enables <40 ns turn-on delay with 10 Ω gate resistor. |
| Ciss | 1800 pF - Low input capacitance reduces Miller effect, improving noise immunity and reducing gate drive power demand. |
| Tch max | 150°C - Allows operation in industrial environments up to 85°C ambient with appropriate heatsinking per Rth(ch-c) = 4.16 °C/W. |
Pinout & Package
TK22A10N1,S4X is housed in a TO-220SIS (JEITA SC-67) package with isolated drain tab, enabling direct mounting to heatsink without insulator. The package weighs 1.7 g and features 3 terminals in standard linear configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ≤±20 V gate-source voltage; sensitive to ESD - must be handled with grounded wrist strap. |
| 2 | Drain | High-side power node connected to heatsink; electrically isolated from case but thermally coupled - requires dielectric mounting if chassis-grounded. |
| 3 | Source | Reference node for gate drive and current sensing; connects to low-side switch or ground return path in buck/half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench process | Enables 11.5 mΩ RDS(ON) in TO-220SIS without sacrificing avalanche ruggedness or switching speed. |
| Single-pulse avalanche rating | 48 mJ at Tch = 25°C - eliminates need for external snubbers in inductive load switching applications. |
| Low Qgd/Qg ratio | 8.1/28 nC = 0.29 - minimizes Miller plateau duration, improving controllability during hard switching. |
| Body diode trr | 54 ns - supports high-frequency freewheeling in 100–500 kHz DC-DC converters with low reverse recovery loss. |
| RoHS-compliant marking | Underlined Lot No. indicates [[G]]/RoHS COMPATIBLE - meets EU Directive 2011/65/EU without lead exemption. |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drives |
|---|---|
Use Scenario: 48 V input to 12 V/24 V output step-down converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with gate-driven by MP6540 half-bridge driver. Use Value: 11.5 mΩ RDS(ON) limits conduction loss to <1.5 W at 30 A load, enabling natural convection cooling in sealed enclosure. |
Use Scenario: Phase-leg high-side switch in 3-phase inverter for HVAC blower motor (1.5 kW, 48 V bus). IC Role / Device Role / Timing Role: Power switching element in six-step commutation, driven by IR2104 gate driver with bootstrap supply. Use Value: 48 mJ EAS withstands inductive kickback during abrupt current reversal, eliminating need for external clamping diodes. |
| Server VRM Power Stages | Telecom Rectifier Modules |
Use Scenario: Multiphase buck converter stage supplying 1.8 V @ 120 A to server CPU core rail. IC Role / Device Role / Timing Role: Low-side switch in interleaved phase, synchronized to 600 kHz PWM with digital controller (TPS53688). Use Value: 1800 pF Ciss and 28 nC Qg enable stable gate drive with 5 Ω series resistor, minimizing shoot-through risk. |
Use Scenario: Primary-side switch in 48 V telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch handling 25 A DC current, operating at 100 kHz with zero-voltage switching assistance. Use Value: 52 A ID rating and 4.16 °C/W Rth(ch-c) allow full-load operation at 60°C ambient using finned aluminum heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(ON) = 14 mΩ (VGS = 10 V); lower avalanche energy (EAS = 27 mJ); TO-220FP package with non-isolated drain. | Lacks isolated drain - requires insulating pad for heatsink mounting; lower EAS limits use in high-inductance motor drives. | Select when cost sensitivity outweighs thermal isolation needs and avalanche stress is minimal. |
| IRF3205PBF | RDS(ON) = 8.0 mΩ (VGS = 10 V); higher Qg = 71 nC; TO-220AB package with non-isolated drain. | Higher gate charge increases switching loss at >200 kHz; non-isolated drain complicates thermal design in grounded-chassis systems. | Prefer for ultra-low RDS(ON) priority in low-frequency (<100 kHz), non-isolated heatsink applications. |
Compared with STP55NF06L and IRF3205PBF, TK22A10N1,S4X offers superior thermal isolation via TO-220SIS, balanced RDS(ON)/Qg trade-off for 200–500 kHz operation, and industry-leading EAS for ruggedness in motor control - making it optimal for industrial-grade power conversion where reliability and layout flexibility are critical.
Availability
TK22A10N1,S4X is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drives, and telecom rectifier modules requiring stable component supply across multi-year production cycles.
Supply support for TK22A10N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and energy efficiency.
The TK22A10N1,S4X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-current, high-reliability switching in industrial power supplies and motor control systems.
FAQ
What is the maximum continuous drain current rating for TK22A10N1,S4X?
The TK22A10N1,S4X is rated for 52 A DC drain current at case temperature Tc = 25°C. At elevated case temperatures, derating applies per the Safe Operating Area curve (Fig. 8.13); for example, at Tc = 100°C, the usable ID drops to approximately 28 A. This rating assumes proper heatsinking with Rth(ch-c) = 4.16 °C/W and no secondary thermal bottlenecks.
Does TK22A10N1,S4X have an isolated drain in its TO-220SIS package?
Yes, TK22A10N1,S4X uses the TO-220SIS (SC-67) package with electrically isolated drain tab. Pin 2 (Drain) is insulated from the metal mounting surface, allowing direct attachment to a grounded heatsink without additional insulation. This differs from standard TO-220AB packages and simplifies thermal design in high-voltage systems.
What is the gate threshold voltage range for TK22A10N1,S4X?
The TK22A10N1,S4X has a guaranteed gate threshold voltage (Vth) range of 2.0 V to 4.0 V, measured at VDS = 10 V and ID = 0.3 mA. This enhancement-mode specification ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs when used with appropriate gate resistors and pull-down networks.
Can TK22A10N1,S4X be used in avalanche mode repeatedly?
No - TK22A10N1,S4X is specified for single-pulse avalanche only (EAS = 48 mJ, t = 1 ms). Repetitive avalanche operation is not characterized or guaranteed and may accelerate wear-out. For circuits subject to repeated inductive switching stress, external clamping (e.g., TVS diodes or RCD snubbers) is recommended to limit VDS spikes below 100 V.
Is TK22A10N1,S4X RoHS compliant?
Yes, TK22A10N1,S4X is RoHS compliant per EU Directive 2011/65/EU. Units marked with an underlined Lot No. indicate [[G]]/RoHS COMPATIBLE status. Lead-free soldering profiles compatible with JEDEC J-STD-020D are supported; peak reflow temperature must not exceed 260°C for 10 seconds.
TK22A10N1,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13.8mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK22A10N1,S4X FAQ
1.How can I place an order for TK22A10N1,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK22A10N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK22A10N1,S4X reliable?
The price and inventory of TK22A10N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK22A10N1,S4X is usually 5 days.
3.What payment methods are accepted for TK22A10N1,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK22A10N1,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK22A10N1,S4X?
TK22A10N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK22A10N1,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK22A10N1,S4X?
For technical support, including TK22A10N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK22A10N1,S4X requirements.
6.How does Aetrix verify that TK22A10N1,S4X is sourced from the original manufacturer or authorized distributors?
All TK22A10N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK22A10N1,S4X meets industry standards.
7.What is the process for return or replacement of TK22A10N1,S4X?
All TK22A10N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK22A10N1,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK22A10N1,S4X part is unused and in its original packaging.
Return procedure for TK22A10N1,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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