Toshiba Semiconductor and Storage TK22A65X5,S5X

Overview

TK22A65X5 from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and industrial SMPS. It delivers 650 V V_DSS, 22 A I_D (DC), R_DS(ON) = 0.135 Ω (typ.), and operates with V_th = 3–4.5 V, enabling efficient gate drive in 400 V bus applications such as server PSUs and telecom rectifiers.

For engineers reviewing the TK22A65X5 datasheet, TK22A65X5 pinout, TK22A65X5 application, or TK22A65X5 equivalent, key selection criteria include avalanche ruggedness (E_AS = 361 mJ), dv/dt immunity (≥50 V/ns), thermal resistance (R_th(ch-c) = 2.78 °C/W), and TO-220SIS package compatibility with heatsink-mounting requirements in high-reliability power conversion designs.

Technical Context

This DTMOS™-H device uses Toshiba's super-junction structure to achieve low conduction loss while maintaining fast switching and robust avalanche capability. Its enhancement-mode operation with 3–4.5 V threshold voltage ensures compatibility with standard 5 V and 10 V gate drivers without level-shifting circuitry.

The MOSFET features integrated body diode with t_rr = 110 ns (typ.) and Q_rr = 0.6 µC (typ.), supporting ZVS and quasi-resonant topologies. Gate charge values-Q_g = 50 nC, Q_gd = 25 nC-enable predictable turn-on/turn-off timing under 10 Ω gate resistance at 400 V V_DD.

Key Specifications

Pinout & Package

TK22A65X5 is housed in a TO-220SIS (JEITA SC-67) package with isolated drain tab, enabling direct heatsink mounting without insulating hardware. The package weighs 1.7 g and supports 0.6 N·m mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP22NM60ND and IPP65R190C7, the TK22A65X5 offers superior avalanche ruggedness and integrated isolation-critical for telecom rectifiers and industrial SMPS where layout constraints prevent external insulation-and achieves lower conduction loss at 11 A, directly improving full-load efficiency by ~0.4 % in 300 W systems.

Availability

TK22A65X5 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK22A65X5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in silicon power MOSFETs and IGBTs.

The TK22A65X5 belongs to Toshiba's DTMOS™-H super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating at 400–450 V DC bus voltages.

FAQ

What is the maximum continuous drain current for TK22A65X5 at T_c = 25 °C?

The TK22A65X5 supports 22 A DC drain current when case temperature is maintained at 25 °C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to limit channel temperature to ≤150 °C; actual usable current drops to ~14 A at T_c = 100 °C per thermal derating curves in the datasheet.

Does TK22A65X5 have an isolated package, and what is its isolation voltage rating?

Yes, the TK22A65X5 uses a TO-220SIS package with electrically isolated drain tab. Its isolation voltage is rated at V_ISO(RMS) = 2000 V, allowing direct mounting to grounded heatsinks without thermal interface pads or insulating hardware-reducing thermal resistance and assembly cost in high-volume power supplies.

What is the typical gate threshold voltage (V_th) of TK22A65X5, and how does it affect drive requirements?

The TK22A65X5 has a gate threshold voltage range of 3–4.5 V (V_DS = 10 V, I_D = 1.1 mA), making it compatible with standard 5 V logic-level gate drivers. This V_th ensures full enhancement at 10 V gate drive while avoiding accidental turn-on from noise, simplifying drive circuit design compared to higher-threshold 650 V MOSFETs.

How does the TK22A65X5's avalanche energy rating compare to typical 650 V MOSFETs?

The TK22A65X5 specifies E_AS = 361 mJ (single-pulse), exceeding most competing 650 V MOSFETs by ≥60 %. This high avalanche ruggedness enables reliable operation in unclamped inductive switching conditions-such as PFC overcurrent events or transformer saturation-without requiring external snubber networks.

Is TK22A65X5 RoHS compliant, and how is compliance indicated on the device marking?

Yes, TK22A65X5 is RoHS compliant. Per Toshiba's marking convention, RoHS-compliant units feature an underlined lot number with [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-underlined markings indicate lead-containing versions; always verify compliance via the date code and packaging label per the latest Toshiba environmental documentation.