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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK22E10N1,S1X

Name: TK22E10N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK22E10N1,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK22E10N1,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK22E10N1,S1X.pdf

Description:: MOSFET N CH 100V 52A TO220

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Product details

Overview

TK22E10N1,S1X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H technology, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 52 A continuous drain current at Tc = 25°C, features 11.5 mΩ typical R_DS(ON) at V_GS = 10 V, and supports 100 V drain-source breakdown voltage - enabling efficient operation in industrial switching regulators.

For engineers reviewing the TK22E10N1,S1X datasheet, TK22E10N1,S1X pinout, TK22E10N1,S1X application, or TK22E10N1,S1X equivalent, key selection criteria include its TO-220 package thermal performance (R_th(ch-c) = 1.72 °C/W), avalanche ruggedness (E_AS = 48 mJ), and gate threshold range (2.0–4.0 V) for reliable TTL/CMOS-level drive compatibility.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H process to optimize conduction and switching losses simultaneously. Its low R_DS(ON) and moderate gate charge (Q_g = 28 nC typ.) support high-efficiency hard-switching topologies up to several hundred kHz, while integrated body diode characteristics (t_rr = 54 ns, Q_rr = 94 nC) reduce snubber requirements in synchronous rectification and flyback designs.

The device operates in enhancement mode with guaranteed V_th between 2.0 V and 4.0 V, ensuring robust turn-on margin under varying gate drive conditions. Its absolute maximum channel temperature of 150°C and specified safe operating area (SOA) enable stable operation under repetitive pulse loads - critical for uninterruptible power supplies and motor phase-leg switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports input rails up to 48 V nominal systems with ≥2× safety margin against transients
R_DS(ON) (typ.)	11.5 mΩ at V_GS = 10 V - enables <1.3 W conduction loss at 11 A DC, reducing heatsink size
I_D (DC)	52 A at T_c = 25°C - suitable for high-power buck stages without parallel devices
E_AS	48 mJ - withstands single-pulse inductive energy without failure in relay/snubberless designs
Q_g	28 nC typ. - balances switching speed and gate driver power demand in 100–300 kHz applications
t_rr	54 ns - limits reverse recovery loss and EMI in secondary-side synchronous rectifiers
R_th(ch-c)	1.72 °C/W - allows direct mounting to heatsink for thermal management in compact enclosures

Pinout & Package

TK22E10N1,S1X is housed in a standard TO-220 package (Toshiba designation: 2-10X1A), with exposed drain tab serving as both electrical connection and thermal path. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control input requiring ≤±20 V drive; sensitive to ESD - must be protected during handling and PCB layout
2	Drain (heatsink)	Main high-side power node; electrically tied to metal tab - requires isolation from chassis unless system ground references drain
3	Source	Return path for load current; establishes reference for gate drive; used for current sensing in low-side configurations

Key Features

Feature	Design Value
U-MOSⅧ-H silicon process	Reduces specific on-resistance by ~25% vs. prior U-MOS generations, improving power density in space-constrained SMPS
Low leakage IDSS	≤10 µA at V_DS = 100 V ensures minimal standby power loss in always-on auxiliary supplies
Guaranteed avalanche capability	Rated for single-pulse E_AS = 48 mJ - eliminates need for external clamping in inductive load switching
Enhancement-mode V_th	2.0–4.0 V range provides noise immunity and compatibility with 3.3 V/5 V microcontroller GPIO without level-shifting
Integrated body diode	Optimized t_rr = 54 ns and Q_rr = 94 nC enable use in freewheeling paths without external Schottky replacement

Applications

Server VRM Power Stage	Industrial DC-DC Converter
Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion for CPU/GPU core supplies in rack-mounted servers. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck converter, switching at 300–500 kHz with precise dead-time control. Use Value: 11.5 mΩ R_DS(ON) minimizes conduction loss at 50+ A per phase, while low Q_g reduces gate drive loss and improves transient response.	Use Scenario: 48 V input to 24 V/12 V isolated or non-isolated step-down supply in factory automation controllers. IC Role / Device Role / Timing Role: Primary-side switch in hard-switched forward or active-clamp flyback topology, operating at 100–200 kHz. Use Value: 100 V V_DSS rating accommodates 48 V bus with 100% transient margin; avalanche rating handles leakage inductance spikes without snubber.
Motor Drive Half-Bridge	Uninterruptible Power Supply (UPS)
Use Scenario: Low-side switching element in three-phase inverter driving 1–3 kW AC induction motors in HVAC compressors. IC Role / Device Role / Timing Role: PWM-controlled power switch in IGBT/MOSFET hybrid half-bridge, commutated at 8–16 kHz with controlled dv/dt. Use Value: R_th(ch-c) = 1.72 °C/W enables direct heatsink mounting; SOA curve supports 102 A pulsed current during motor startup surges.	Use Scenario: Bidirectional DC link switch in online double-conversion UPS inverters, managing battery-to-AC and AC-to-battery energy flow. IC Role / Device Role / Timing Role: High-reliability switching element in H-bridge output stage, subjected to repetitive short-circuit and overload events. Use Value: Guaranteed E_AS = 48 mJ and T_ch = 150°C rating ensure survivability during grid fault conditions without derating.

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1.2 V conversion for CPU/GPU core supplies in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase buck converter, switching at 300–500 kHz with precise dead-time control.

Use Value: 11.5 mΩ R_DS(ON) minimizes conduction loss at 50+ A per phase, while low Q_g reduces gate drive loss and improves transient response.

Use Scenario: 48 V input to 24 V/12 V isolated or non-isolated step-down supply in factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switch in hard-switched forward or active-clamp flyback topology, operating at 100–200 kHz.

Use Value: 100 V V_DSS rating accommodates 48 V bus with 100% transient margin; avalanche rating handles leakage inductance spikes without snubber.

Motor Drive Half-Bridge

Uninterruptible Power Supply (UPS)

Use Scenario: Low-side switching element in three-phase inverter driving 1–3 kW AC induction motors in HVAC compressors.

IC Role / Device Role / Timing Role: PWM-controlled power switch in IGBT/MOSFET hybrid half-bridge, commutated at 8–16 kHz with controlled dv/dt.

Use Value: R_th(ch-c) = 1.72 °C/W enables direct heatsink mounting; SOA curve supports 102 A pulsed current during motor startup surges.

Use Scenario: Bidirectional DC link switch in online double-conversion UPS inverters, managing battery-to-AC and AC-to-battery energy flow.

IC Role / Device Role / Timing Role: High-reliability switching element in H-bridge output stage, subjected to repetitive short-circuit and overload events.

Use Value: Guaranteed E_AS = 48 mJ and T_ch = 150°C rating ensure survivability during grid fault conditions without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF10	R_DS(ON) = 18 mΩ (typ.), higher Q_g = 75 nC, same TO-220 package and 100 V rating	Higher conduction loss and slower switching limit efficiency in >200 kHz designs	Prefer TK22E10N1,S1X where thermal headroom or switching frequency exceeds 150 kHz
IRF540NPBF	R_DS(ON) = 44 mΩ (typ.), lower V_DSS = 100 V but no guaranteed avalanche rating	Lacks E_AS specification and has significantly higher on-resistance - unsuitable for high-current or inductive switching	TK22E10N1,S1X offers superior conduction efficiency and ruggedness for mission-critical industrial use

Compared with STP55NF10 and IRF540NPBF, TK22E10N1,S1X delivers 38% lower R_DS(ON), 63% less gate charge, and certified single-pulse avalanche capability - making it the preferred choice for thermally constrained, high-frequency, or reliability-sensitive power stages.

Availability

TK22E10N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, motor drive inverters, and UPS systems requiring stable component supply across multi-year production cycles.

Supply support for TK22E10N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with over 50 years of power MOSFET innovation.

The TK22E10N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching applications in industrial and computing power supplies.

FAQ

What is the maximum continuous drain current rating for TK22E10N1,S1X?

The TK22E10N1,S1X is rated for 52 A continuous drain current (I_D) at case temperature T_c = 25°C. This rating assumes proper heatsinking - derating applies above 25°C per the R_th(ch-c) = 1.72 °C/W thermal resistance. At T_c = 100°C, the usable I_D drops to approximately 28 A to maintain channel temperature ≤150°C.

Does TK22E10N1,S1X have avalanche capability, and is it tested?

Yes, TK22E10N1,S1X is specified for single-pulse avalanche energy E_AS = 48 mJ (T_ch = 25°C, V_DD = 80 V, L = 77.6 µH, I_AR = 22 A). This parameter is guaranteed per Toshiba's production test flow and documented in the Absolute Maximum Ratings table - confirming ruggedness for inductive switching without external clamping.

What is the gate threshold voltage range for TK22E10N1,S1X, and how does it affect drive design?

The TK22E10N1,S1X has a guaranteed gate threshold voltage V_th range of 2.0 V to 4.0 V (V_DS = 10 V, I_D = 0.3 mA). This wide range ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers while providing noise margin against false triggering - no external gate resistor or level shifter is required for most microcontroller interfaces.

Can TK22E10N1,S1X be used in synchronous rectification applications?

Yes, TK22E10N1,S1X supports synchronous rectification via its integrated body diode, characterized with reverse recovery time t_rr = 54 ns and reverse recovery charge Q_rr = 94 nC (I_DR = 22 A, -dI_DR/dt = 100 A/µs). These values allow efficient operation in secondary-side rectification of flyback or LLC converters up to 300 kHz without external Schottky diodes.

Is TK22E10N1,S1X RoHS-compliant and lead-free?

Yes, TK22E10N1,S1X meets RoHS Directive 2011/65/EU requirements and is manufactured as a lead-free device. Toshiba confirms compliance in its environmental documentation - the part carries standard JEDEC-compliant matte tin plating on leads and conforms to MSL Level 1 moisture sensitivity classification.

TK22E10N1,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 72W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK22E10N1,S1X FAQ

1.How can I place an order for TK22E10N1,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK22E10N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK22E10N1,S1X reliable?

The price and inventory of TK22E10N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK22E10N1,S1X is usually 5 days.

3.What payment methods are accepted for TK22E10N1,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK22E10N1,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK22E10N1,S1X?

TK22E10N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK22E10N1,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK22E10N1,S1X?

For technical support, including TK22E10N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK22E10N1,S1X requirements.

6.How does Aetrix verify that TK22E10N1,S1X is sourced from the original manufacturer or authorized distributors?

All TK22E10N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK22E10N1,S1X meets industry standards.

7.What is the process for return or replacement of TK22E10N1,S1X?

All TK22E10N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK22E10N1,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK22E10N1,S1X part is unused and in its original packaging.

Return procedure for TK22E10N1,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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