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Toshiba Semiconductor and Storage TK22V65X5,LQ
- Part No.:
- TK22V65X5,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 4-VSFN Exposed Pad
- Datasheet:
-
TK22V65X5,LQ.pdf
- Description:
- PB-F POWER MOSFET TRANSISTOR DFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
TK22V65X5,LQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and industrial DC-DC converters. It delivers 650 V VDSS, 22 A continuous drain current (ID), and ultra-low RDS(ON) of 0.14 Ω (typ.) at VGS = 10 V, enabling high-efficiency operation in PFC and LLC resonant stages.
For engineers reviewing the TK22V65X5,LQ datasheet, TK22V65X5,LQ pinout, TK22V65X5,LQ application, or TK22V65X5,LQ equivalent, key selection criteria include its DFN8x8 package thermal performance (Rth(ch-c) = 0.694 °C/W), avalanche ruggedness (EAS = 318 mJ), and gate threshold voltage range (3–4.5 V) ensuring compatibility with standard 5 V and 12 V gate drivers in high-reliability industrial power designs.
Technical Context
This device implements Toshiba's DTMOS™-H technology - a trench-gate super-junction structure that reduces specific on-resistance while maintaining fast switching and robust dv/dt immunity. Its optimized charge characteristics (Qg = 50 nC typ., Qgd/Qgs1 = 25/20 nC) support high-frequency operation up to 300 kHz in hard-switched topologies without excessive gate drive loss.
The TK22V65X5,LQ integrates an intrinsic body diode with reverse recovery time (trr) of 110 ns (typ.) and low Qrr (0.6 µC), reducing commutation losses in bridge configurations. Its 88 A pulsed drain current rating and 150 °C channel temperature limit enable sustained operation under transient overloads in uninterruptible power supplies and motor drives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports universal AC input (85–265 VAC) rectified to ≥400 VDC bus without derating |
| RDS(ON) | 0.14 Ω (typ.) at VGS = 10 V - enables <1.5 W conduction loss at 22 A, critical for >95% efficiency targets |
| ID (DC) | 22 A at Tc = 25 °C - rated for continuous operation in thermally managed heatsink-mounted applications |
| EAS | 318 mJ - withstands single-pulse inductive energy in flyback/PFC circuits without failure |
| Rth(ch-c) | 0.694 °C/W - allows direct mounting to PCB copper pour or heatsink, simplifying thermal design vs. TO-247 |
| Qg | 50 nC (typ.) - compatible with standard 1-A peak gate drivers at 100–300 kHz switching frequencies |
| trr | 110 ns (typ.) - minimizes cross-conduction loss in synchronous rectification and half-bridge ZVS designs |
Pinout & Package
TK22V65X5,LQ uses the DFN8x8 (TOSHIBA 2-8T1A) surface-mount package with exposed drain pad for thermal and electrical performance. The 8-pin layout features dual-source configuration optimized for high-current return path separation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input; requires low-impedance driver due to 1.7 Ω gate resistance and 50 nC total charge |
| 2 | Source 1 | Signal reference return for gate drive circuitry - must be connected to driver ground to avoid noise coupling |
| 3, 4 | Source 2 | Main power return path for 22 A drain current - must be routed with wide copper to minimize voltage drop and EMI |
| 5 | Drain (Heatsink) | High-side switch node and primary thermal interface - soldered directly to PCB thermal pad for 0.694 °C/W path |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™-H structure | Reduces RDS(ON) × area by 40% vs. planar MOSFETs, enabling smaller 8×8 mm footprint without sacrificing 650 V rating |
| Enhancement-mode Vth | 3–4.5 V threshold ensures reliable turn-on with 5 V logic-level controllers and avoids accidental conduction during startup |
| High dv/dt immunity | 50 V/ns minimum rating prevents false triggering in noisy high-di/dt environments like motor inverters and SMPS |
| Low Qgd/Qgs ratio | 25/20 nC ratio improves Miller immunity and enables stable operation with minimal gate resistor damping |
| Integrated avalanche-rated body diode | Supports unidirectional freewheeling in buck/forward converters without external Schottky, reducing BOM count |
Applications
| Server PSU PFC Stage | Industrial AC-DC Adapter |
|---|---|
Use Scenario: Active clamp PFC boost converter operating at 70–100 kHz with 3.3 kW output in 1U server power supply. IC Role / Device Role / Timing Role: High-side switching element handling 22 A RMS input current and 650 V blocking voltage. Use Value: 0.14 Ω RDS(ON) cuts conduction loss by 35% vs. legacy 0.22 Ω MOSFETs, enabling >96% efficiency at full load without forced air cooling. |
Use Scenario: Universal-input (85–265 VAC), 500 W industrial adapter with integrated surge protection and hold-up time >20 ms. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback topology, switching at variable frequency up to 130 kHz. Use Value: 318 mJ single-pulse avalanche energy absorbs line transients per IEC 61000-4-5 Level 4, eliminating need for external clamping components. |
| Telecom Rectifier Module | EV Onboard Charger (OBC) PFC |
Use Scenario: -48 V telecom rectifier with digital control, operating continuously at 60°C ambient with 92% efficiency target. IC Role / Device Role / Timing Role: Switching transistor in interleaved two-phase boost PFC stage, sharing 40 A total input current. Use Value: DFN8x8 package with 0.694 °C/W Rth(ch-c) enables direct thermal coupling to cold plate, reducing junction-to-ambient ΔT by 18°C vs. TO-220. |
Use Scenario: 6.6 kW bidirectional OBC PFC stage converting AC grid to 400 V DC bus for EV battery charging. IC Role / Device Role / Timing Role: Unidirectional switch in totem-pole PFC configuration, operating in continuous conduction mode at 65 kHz. Use Value: 110 ns trr and low Qrr (0.6 µC) minimize reverse recovery loss during zero-voltage switching transitions, improving light-load efficiency by 2.3%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW22N65M5 | 650 V, 22 A, RDS(ON) = 0.15 Ω (typ.), TO-247 package, higher Qg = 62 nC | Requires larger heatsink and gate driver with >1.2 A peak capability; not surface-mount compatible | Preferred where legacy through-hole assembly or higher avalanche rating (EAS = 420 mJ) is prioritized over board space |
| IXFH22N65X2 | 650 V, 22 A, RDS(ON) = 0.165 Ω (typ.), TO-247, lower trr = 75 ns but no integrated avalanche rating | Lacks guaranteed EAS specification; requires external snubbers in inductive loads | Suitable for high-frequency ZVS designs where reverse recovery speed outweighs ruggedness requirements |
Compared with STW22N65M5 and IXFH22N65X2, the TK22V65X5,LQ offers superior power density via DFN8x8 packaging, lower conduction loss, and factory-validated avalanche capability - making it optimal for space-constrained, high-reliability industrial power modules where thermal management and transient robustness are critical.
Availability
TK22V65X5,LQ is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.
Supply support for TK22V65X5,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions with over 50 years of power electronics innovation.
The TK22V65X5,LQ belongs to Toshiba's DTMOS™-H super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial, telecom, and server infrastructure.
FAQ
What is the maximum continuous drain current rating for TK22V65X5,LQ?
The TK22V65X5,LQ is rated for 22 A continuous drain current (ID) at case temperature (Tc) = 25 °C. Derating is required above this temperature - for example, at Tc = 100 °C, the usable ID drops to approximately 12.5 A per the PD vs. Tc curve in Figure 8.15. This rating assumes proper PCB thermal design using the exposed drain pad.
Does TK22V65X5,LQ support gate driving with standard 5 V microcontrollers?
Yes, the TK22V65X5,LQ has an enhancement-mode gate threshold voltage (Vth) of 3–4.5 V, allowing reliable turn-on with 5 V logic-level signals. However, full RDS(ON) specification (0.14 Ω) requires VGS = 10 V, so a level-shifted or buffered gate driver is recommended for high-efficiency operation at full load.
How is the dual-source pin configuration (pins 2, 3, 4) used in TK22V65X5,LQ?
In the TK22V65X5,LQ, pin 2 (Source 1) serves as the dedicated return path for gate drive signals to prevent noise coupling into the control loop, while pins 3 and 4 (Source 2) carry the full 22 A power return current. Separating these paths minimizes ground bounce and improves switching stability in high-di/dt applications.
Is TK22V65X5,LQ suitable for avalanche-prone circuits like flyback converters?
Yes, the TK22V65X5,LQ is fully specified for single-pulse avalanche operation with EAS = 318 mJ (Tch = 25 °C) and IAS = 5.5 A. This makes it suitable for flyback and active-clamp forward converters where inductive energy must be safely absorbed during switch-off without external clamping.
What thermal interface requirements apply to the drain pad of TK22V65X5,LQ?
Pin 5 (Drain/Heatsink) of the TK22V65X5,LQ must be soldered to a minimum 200 mm² copper thermal pad on the PCB, with ≥4 thermal vias (0.3 mm diameter) connecting to internal ground planes. This achieves the specified Rth(ch-c) = 0.694 °C/W and prevents channel temperature exceedance beyond 150 °C under full load.
TK22V65X5,LQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV-H
- Package/Case:
- 4-VSFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 170mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 180W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN-EP (8x8)
TK22V65X5,LQ FAQ
1.How can I place an order for TK22V65X5,LQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK22V65X5,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK22V65X5,LQ reliable?
The price and inventory of TK22V65X5,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK22V65X5,LQ is usually 5 days.
3.What payment methods are accepted for TK22V65X5,LQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK22V65X5,LQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK22V65X5,LQ?
TK22V65X5,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK22V65X5,LQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK22V65X5,LQ?
For technical support, including TK22V65X5,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK22V65X5,LQ requirements.
6.How does Aetrix verify that TK22V65X5,LQ is sourced from the original manufacturer or authorized distributors?
All TK22V65X5,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK22V65X5,LQ meets industry standards.
7.What is the process for return or replacement of TK22V65X5,LQ?
All TK22V65X5,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK22V65X5,LQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK22V65X5,LQ part is unused and in its original packaging.
Return procedure for TK22V65X5,LQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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