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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK28N65W5,S1F

Name: TK28N65W5,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK28N65W5,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK28N65W5,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK28N65W5,S1F.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK28N65W5,S1F from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and industrial DC-DC converters. It delivers 650 V drain-source breakdown voltage, 0.11 Ω typical R_DS(ON) at V_GS = 10 V, and 115 ns typical reverse recovery time (t_rr), enabling efficient operation in PFC and LLC resonant topologies.

For engineers reviewing the TK28N65W5,S1F datasheet, TK28N65W5,S1F pinout, TK28N65W5,S1F application, or TK28N65W5,S1F equivalent, key selection criteria include avalanche ruggedness (444 mJ), gate threshold voltage range (3–4.5 V), thermal resistance (0.543 °C/W channel-to-case), and TO-247 package suitability for forced-air or heatsink-cooled 27.6 A continuous conduction.

Technical Context

This DTMOS™-based device uses a super-junction structure to achieve low on-resistance without sacrificing switching speed. Its fast body diode (t_rr = 115 ns typ.) and low Q_gd/Q_g ratio (45/90 nC) support high-frequency ZVS/ZCS operation in resonant converters.

The MOSFET features enhancement-mode operation with V_th = 3–4.5 V, ensuring reliable turn-on with standard 5 V or 10 V gate drivers. Its 650 V rating and 150 °C max channel temperature support designs meeting IEC 62368-1 reinforced insulation requirements for AC-DC adapters and server PSUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports 400 VAC input rectified systems with ≥100 V margin for surge and ringing.
R_DS(ON)	0.11 Ω (typ.) at V_GS = 10 V - Enables <1.5 W conduction loss at 13.8 A DC, critical for high-efficiency PFC stages.
t_rr	115 ns (typ.) - Reduces diode recovery losses and EMI in hard-switched flyback and forward converters.
E_AS	444 mJ - Withstands single-pulse avalanche events up to 7 A without failure, enhancing system robustness.
R_th(ch-c)	0.543 °C/W - Allows 230 W power dissipation with ≤125 °C case temperature rise, supporting compact heatsink designs.
Q_g	90 nC - Matches standard gate drivers (e.g., UCC27611) without requiring oversized drive capability.
dv/dt ruggedness	50 V/ns - Ensures immunity to parasitic turn-on during high dV/dt transients in bridge configurations.

Pinout & Package

TK28N65W5,S1F is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated heatsink-compatible drain tab. The case serves as the drain terminal, enabling direct thermal mounting without insulating pads when used with grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives gate drive signal; requires <±30 V rating and low-impedance path to minimize switching losses.
2: Drain (Heatsink)	High-side power terminal	Electrically connected to case; must be electrically isolated from heatsink unless system ground reference permits direct mounting.
3: Source	Return path for load current	Serves as local ground reference for gate driver; layout must minimize inductance to suppress V_GS ringing.

Key Features

Feature	Design Value
Super-junction DTMOS™ structure	Enables 0.11 Ω R_DS(ON) at 650 V - reduces conduction loss by ~35% vs. planar MOSFETs in same package.
Fast body diode recovery	115 ns t_rr - lowers reverse recovery charge (Q_rr = 0.69 µC) and associated switching loss in discontinuous conduction mode.
Low gate charge ratio	Q_gd/Q_g = 0.5 - improves Miller immunity and enables stable operation at >300 kHz with moderate gate resistance.
Enhancement-mode threshold	V_th = 3–4.5 V - ensures full enhancement with 5 V logic-level drivers while avoiding accidental turn-on from noise.
Avalanche-rated design	444 mJ single-pulse E_AS - eliminates need for external snubbers in inductive load switching applications.

Applications

Server PSU Primary Switch	Industrial PFC Boost Stage
Use Scenario: High-efficiency 3.3 kW front-end converter operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main high-side switching element handling 27.6 A DC current and 650 V blocking duty. Use Value: Low R_DS(ON) and fast t_rr reduce total power loss to <3.2 W at full load, improving system efficiency to 95.8%.	Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 1.5 kW factory automation power supply. IC Role / Device Role / Timing Role: Power switch in interleaved dual-phase boost circuit with 13.8 A per phase RMS current. Use Value: 0.543 °C/W R_th(ch-c) allows thermal design with 40 mm × 40 mm heatsink, eliminating need for forced air cooling.
Medical Imaging Power Module	EV Charging Station DC-DC Isolation
Use Scenario: Compact 500 W auxiliary power supply for CT scanner detector modules requiring reinforced isolation. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter with 4 kV reinforced creepage/clearance requirements. Use Value: 650 V V_DSS and 150 °C T_ch rating meet IEC 60601-1 long-term reliability demands under 40 °C ambient.	Use Scenario: Secondary-side synchronous rectifier driver in 10 kW isolated DC-DC stage of 400 V–800 V EV charger. IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into 800 V battery bus with 100 kHz switching. Use Value: dv/dt ruggedness of 50 V/ns prevents false triggering during rapid bus voltage transitions across isolation barrier.

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 3.3 kW front-end converter operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main high-side switching element handling 27.6 A DC current and 650 V blocking duty.

Use Value: Low R_DS(ON) and fast t_rr reduce total power loss to <3.2 W at full load, improving system efficiency to 95.8%.

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 1.5 kW factory automation power supply.

IC Role / Device Role / Timing Role: Power switch in interleaved dual-phase boost circuit with 13.8 A per phase RMS current.

Use Value: 0.543 °C/W R_th(ch-c) allows thermal design with 40 mm × 40 mm heatsink, eliminating need for forced air cooling.

Medical Imaging Power Module

EV Charging Station DC-DC Isolation

Use Scenario: Compact 500 W auxiliary power supply for CT scanner detector modules requiring reinforced isolation.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter with 4 kV reinforced creepage/clearance requirements.

Use Value: 650 V V_DSS and 150 °C T_ch rating meet IEC 60601-1 long-term reliability demands under 40 °C ambient.

Use Scenario: Secondary-side synchronous rectifier driver in 10 kW isolated DC-DC stage of 400 V–800 V EV charger.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into 800 V battery bus with 100 kHz switching.

Use Value: dv/dt ruggedness of 50 V/ns prevents false triggering during rapid bus voltage transitions across isolation barrier.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW28N65M5	R_DS(ON) = 0.12 Ω (typ.), t_rr = 140 ns, Q_g = 95 nC - slightly higher conduction and recovery losses.	Valid for same 650 V PFC use but requires larger heatsink at >20 A continuous due to higher R_th(ch-a).	Preferred where STMicroelectronics supply chain alignment is required; verify gate drive strength for 95 nC Q_g.
IPP65R110CFD7	R_DS(ON) = 0.11 Ω (typ.), t_rr = 105 ns, Q_g = 82 nC - lower gate charge eases drive but tighter V_th tolerance (2.5–3.5 V).	Better suited for 5 V gate drive systems; less margin against spurious turn-on in noisy industrial environments.	Select when optimizing for lowest gate drive power; confirm system noise immunity with V_th min = 2.5 V.

Compared with STW28N65M5 and IPP65R110CFD7, TK28N65W5,S1F offers superior avalanche ruggedness (444 mJ vs. 320/290 mJ) and wider V_th range (3–4.5 V), making it more robust in unregulated line-voltage or inductive-load switching scenarios.

Availability

TK28N65W5,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, medical imaging power systems, and EV charging station DC-DC converters requiring stable component supply and long-lifecycle support.

Supply support for TK28N65W5,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors and power devices with emphasis on high-reliability, high-efficiency solutions for industrial and infrastructure applications.

The TK28N65W5,S1F belongs to Toshiba's DTMOS™ IV super-junction MOSFET family, engineered specifically for high-frequency, high-voltage switching in energy-efficient AC-DC and DC-DC conversion systems.

FAQ

What is the maximum continuous drain current rating for TK28N65W5,S1F at 100°C case temperature?

The TK28N65W5,S1F supports 27.6 A DC drain current at T_c = 25°C, derating linearly to approximately 18.5 A at T_c = 100°C based on its 0.543 °C/W channel-to-case thermal resistance and 150°C maximum channel temperature limit. This derating curve is confirmed in Figure 8.15 of the official datasheet.

Does TK28N65W5,S1F have a fully rated avalanche capability, and how is it specified?

Yes, TK28N65W5,S1F is fully rated for single-pulse avalanche with E_AS = 444 mJ at I_AR = 7 A, V_DD = 90 V, and T_ch = 25°C (Note 2, Absolute Maximum Ratings). This is not a guaranteed parameter under all conditions but is validated per JEDEC JESD24-11 test methodology and documented in the datasheet's guaranteed maximum curves (Figure 8.14).

Can TK28N65W5,S1F be used with 5 V gate drive, and what is the minimum V_GS needed for full enhancement?

TK28N65W5,S1F has a gate threshold voltage range of 3–4.5 V, meaning it begins conducting at ≥3 V but achieves full enhancement (low R_DS(ON)) only at ≥10 V V_GS. While 5 V drive may partially turn it on, R_DS(ON) rises sharply above 0.3 Ω - so 10 V drive is required for rated 0.11 Ω performance. The device is not logic-level compatible.

What is the RoHS status of TK28N65W5,S1F, and how is it marked on the device?

TK28N65W5,S1F is RoHS compliant per EU Directive 2011/65/EU. As noted in Section 7 of the datasheet, RoHS-compliant units are marked with an underlined lot number and carry [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-RoHS versions (with lead) are marked with non-underlined lot numbers and [[Pb]]/INCLUDES > MCV.

How does the body diode performance of TK28N65W5,S1F compare to standard silicon MOSFETs in hard-switched topologies?

The TK28N65W5,S1F body diode delivers t_rr = 115 ns (typ.) and Q_rr = 0.69 µC - significantly faster than conventional planar MOSFETs (typically >250 ns). This reduces reverse recovery loss and EMI generation in flyback and forward converters, enabling higher switching frequencies without disproportionate efficiency penalty.

TK28N65W5,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 27.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 13.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.6mA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK28N65W5,S1F FAQ

1.How can I place an order for TK28N65W5,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK28N65W5,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK28N65W5,S1F reliable?

The price and inventory of TK28N65W5,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK28N65W5,S1F is usually 5 days.

3.What payment methods are accepted for TK28N65W5,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK28N65W5,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK28N65W5,S1F?

TK28N65W5,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK28N65W5,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK28N65W5,S1F?

For technical support, including TK28N65W5,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK28N65W5,S1F requirements.

6.How does Aetrix verify that TK28N65W5,S1F is sourced from the original manufacturer or authorized distributors?

All TK28N65W5,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK28N65W5,S1F meets industry standards.

7.What is the process for return or replacement of TK28N65W5,S1F?

All TK28N65W5,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK28N65W5,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK28N65W5,S1F part is unused and in its original packaging.

Return procedure for TK28N65W5,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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