Toshiba Semiconductor and Storage TK28V65W5,LQ

Overview

TK28V65W5 from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline SMPS and PFC stages. It delivers R_DS(ON) = 0.115 Ω (typ.), V_DSS = 650 V, and I_D = 27.6 A (DC), with DTMOS™ architecture enabling low conduction loss and robust avalanche capability (E_AS = 347 mJ).

For engineers reviewing the TK28V65W5 datasheet, TK28V65W5 pinout, TK28V65W5 application, or TK28V65W5 equivalent, key selection criteria include its DFN8x8 package thermal performance (R_th(ch-c) = 0.52 °C/W), gate threshold range (3–4.5 V), and source-pin separation for signal return versus power current routing.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV super-junction structure to achieve high breakdown voltage with low on-resistance, optimized for continuous conduction mode (CCM) PFC and hard-switched flyback/LLC primary-side operation. Its enhancement-mode gate (V_th = 3–4.5 V) ensures compatibility with standard 10 V gate drivers.

Thermal design leverages the exposed drain pad (Pin 5) as heatsink interface, while dual-source configuration (Pins 2 and 3–4) separates gate-drive return path (Source 1) from main current return (Source 2), minimizing noise coupling and improving EMI control in high-frequency converters.

Key Specifications

Pinout & Package

TK28V65W5 uses the DFN8x8 (TOSHIBA 2-8T1A) surface-mount package with an exposed drain pad for thermal management. Total weight is 0.175 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW62N65M5 and IXTH30N65X2, the TK28V65W5 offers superior thermal resistance (0.52 °C/W vs. >1.0 °C/W) and integrated layout optimization for high-frequency PFC, making it preferred for compact, high-density 100–300 kHz designs where PCB real estate and EMI are constrained.

Availability

TK28V65W5 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for TK28V65W5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power MOSFETs.

The TK28V65W5 belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in server, telecom, and EV infrastructure applications.

FAQ

What is the maximum continuous drain current for TK28V65W5 at T_c = 100 °C?

The TK28V65W5 supports I_D = 27.6 A (DC) at T_c = 25 °C. At T_c = 100 °C, derating per the Safe Operating Area curve (Fig. 8.17) yields ~16.5 A continuous. This value is confirmed by the guaranteed maximum PD–T_c curve (Fig. 8.15), where 240 W power dissipation drops to ~135 W at 100 °C case temperature, corresponding to 16.5 A at R_DS(ON) = 0.14 Ω (max).

Does TK28V65W5 have an integrated body diode, and what are its reverse recovery characteristics?

Yes, TK28V65W5 includes a fast intrinsic body diode. Its reverse recovery time (t_rr) is 115 ns (typ.) at I_DR = 13.8 A and dI_DR/dt = 100 A/µs, with Q_rr = 0.69 µC (typ.) and peak I_rr = 12.2 A. These values are measured under V_GS = 0 V and support use in quasi-resonant and LLC topologies where body diode conduction occurs during dead-time.

Can TK28V65W5 be used in a synchronous rectifier configuration?

No - TK28V65W5 is a high-side N-channel MOSFET intended for primary-side switching in boost, flyback, or LLC converters. Its gate threshold (3–4.5 V) and lack of level-shifting circuitry make it unsuitable as a low-side synchronous rectifier. For secondary-side SR, discrete low-V_DS MOSFETs or dedicated SR controllers are required.

What is the recommended gate resistor value for TK28V65W5 in a 100 kHz PFC application?

For 100 kHz CCM PFC with minimal switching loss and EMI, a gate resistor of 10–15 Ω is recommended. This value balances t_on/t_off (50 ns/7 ns typ.) and dV/dt control, as validated in the switching time test circuit (Fig. 6.2.1) using RG = 10 Ω, V_GS = 10 V/0 V, and I_D = 13.8 A. Lower values increase EMI; higher values raise switching loss.

Is TK28V65W5 RoHS-compliant and halogen-free?

Yes - TK28V65W5 complies with EU RoHS Directive 2011/65/EU and is halogen-free per J-STD-709. This is confirmed in Toshiba's official environmental compliance documentation referenced in the "RESTRICTIONS ON PRODUCT USE" section of the datasheet (Rev. 2.0.B, 2026-05-13), which directs users to contact Toshiba sales for RoHS status confirmation.