Toshiba Semiconductor and Storage TK28V65W,LQ
- Part No.:
- TK28V65W,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- 4-VSFN Exposed Pad
- Datasheet:
-
TK28V65W,LQ.pdf
- Description:
- X35 PB-F POWER MOSFET TRANSISTOR
- Quantity:
- Payment:

- Shipping:

Inventory:4,966
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Product details
Overview
TK28V65W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 650 V VDSS, 27.6 A continuous drain current, and ultra-low RDS(ON) of 0.099 Ω (typ.) at VGS = 10 V, enabling high-efficiency operation in AC-DC adapters and server SMPS.
For engineers reviewing the TK28V65W datasheet, TK28V65W pinout, TK28V65W application, or TK28V65W equivalent, key selection considerations include its DFN8x8 package thermal performance (Rth(ch-c) = 0.52 °C/W), avalanche ruggedness (EAS = 347 mJ), and gate threshold voltage range (2.5–3.5 V) for reliable drive compatibility with standard PWM controllers.
Technical Context
This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching. Its dual-source configuration (Source1 for signal return, Source2 for main current path) enables precise gate loop control and minimizes common-source inductance effects in hard-switched topologies.
The TK28V65W features enhanced dv/dt ruggedness (≥50 V/ns) and reverse recovery characteristics (Qrr = 3.5 µC, trr = 410 ns) optimized for quasi-resonant and LLC resonant converters. Its 75 nC total gate charge supports efficient gate driver sizing without compromising turn-on/turn-off timing balance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - supports universal-input offline SMPS designs up to 400 V DC bus with margin |
| RDS(ON) | 0.099 Ω (typ.) - reduces conduction loss and thermal stress in high-current 27.6 A applications |
| ID (DC) | 27.6 A - enables compact 150–300 W power stages without forced air cooling |
| EAS | 347 mJ - withstands single-pulse avalanche energy during overvoltage transients in flyback/LLC |
| Rth(ch-c) | 0.52 °C/W - allows direct heatsink mounting via exposed drain pad for >240 W dissipation capability |
| Qg | 75 nC - determines gate driver current requirement (~1.5 A peak for 50 ns rise time) |
| Vth | 2.5–3.5 V - ensures clean enhancement-mode turn-on with standard 5 V or 12 V gate drivers |
Pinout & Package
TK28V65W uses the DFN8x8 (TOSHIBA 2-8T1A) surface-mount package with an exposed drain pad for thermal management. The 8-pin layout integrates dual-source terminals to separate signal and power return paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input; requires low-inductance routing to minimize ringing and overshoot |
| 2 | Source1 | Signal ground return for gate driver; must be connected to controller ground near IC |
| 3, 4 | Source2 | Main power return path; carries full load current and connects to bulk capacitor ground |
| 5 | Drain (Heatsink) | High-voltage output node and thermal interface; soldered directly to PCB copper pour or heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ IV structure | Enables 0.099 Ω RDS(ON) at 650 V rating-reducing conduction loss by ~35% vs. planar MOSFETs |
| Dual-source terminal configuration | Separates gate-loop and power-loop grounds to suppress noise coupling and improve EMI performance |
| Avalanche-rated design | Guarantees 347 mJ single-pulse energy handling-eliminates need for external snubbers in flyback clamp circuits |
| High dv/dt immunity | Rated ≥50 V/ns-prevents false turn-on during fast voltage transitions in bridge-leg configurations |
| Low Qgd/Qg ratio | 32 nC / 75 nC = 0.43-supports stable zero-voltage switching (ZVS) in resonant topologies |
Applications
| Server SMPS | Industrial AC-DC Adapters |
|---|---|
Use Scenario: Primary-side switch in 200–300 W half-bridge LLC resonant converter for data center power supplies. IC Role / Device Role / Timing Role: High-side switching element operating at 100–300 kHz with ZVS, managing 400 V DC bus and delivering regulated 12 V output. Use Value: Low RDS(ON) and optimized Qgd reduce conduction and switching losses, achieving >95% efficiency at full load. |
Use Scenario: Main switch in universal-input 100–150 W flyback converter for factory automation controllers. IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled switch handling 650 V breakdown stress and repetitive avalanche events during startup. Use Value: Guaranteed EAS = 347 mJ and robust Vth stability allow reliable operation without clamping circuits under line surges. |
| Telecom Rectifiers | LED Streetlight Drivers |
Use Scenario: Active clamp forward converter primary switch in 48 V telecom rectifier modules. IC Role / Device Role / Timing Role: Synchronous rectification control switch with tight gate timing and low gate charge for high-frequency operation. Use Value: Dual-source pinout minimizes ground bounce during fast switching, improving current-sense accuracy and system stability. |
Use Scenario: High-side switch in isolated 150 W buck-boost LED driver for outdoor lighting with wide input range (90–305 V AC). IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 65 kHz with high dv/dt stress across drain-source during turn-off. Use Value: dv/dt ruggedness ≥50 V/ns prevents spurious turn-on, eliminating need for negative gate drive or complex gate resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP28N65M5 | 650 V, 28 A, RDS(ON) = 0.11 Ω (typ.), TO-247 package, higher Rth(j-c) = 0.85 °C/W | Requires bolt-down heatsink; less suitable for space-constrained board layouts | Preferred where legacy through-hole assembly or higher surge current margin is required |
| IXTH30N65X2 | 650 V, 30 A, RDS(ON) = 0.095 Ω (typ.), TO-247, Qg = 82 nC, no dual-source pins | Lacks dedicated Source1 pin-increases gate loop inductance and EMI risk in high-density designs | Better for discrete gate driver implementations where layout control is less constrained |
Compared with STP28N65M5 and IXTH30N65X2, the TK28V65W offers superior thermal resistance (0.52 °C/W vs. ≥0.85 °C/W) and integrated dual-source routing-enabling smaller PCB footprints and lower EMI in high-frequency SMPS without sacrificing avalanche robustness or gate drive simplicity.
Availability
TK28V65W is available at Aetrix Electronics and suitable for server SMPS, industrial AC-DC adapters, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for TK28V65W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power MOSFET design.
The TK28V65W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in enterprise and industrial infrastructure.
FAQ
What is the maximum continuous drain current rating for TK28V65W?
The TK28V65W is rated for 27.6 A continuous drain current (ID) at Tc = 25 °C. This rating assumes proper PCB copper area for heatsinking and accounts for the device's 0.52 °C/W channel-to-case thermal resistance. At elevated case temperatures, derating is required per the Safe Operating Area curve in the datasheet.
Does TK28V65W support avalanche operation, and what is its rated energy?
Yes, the TK28V65W is fully avalanche-rated with a guaranteed single-pulse avalanche energy (EAS) of 347 mJ at Tch = 25 °C. This specification is validated under defined test conditions (VDD = 90 V, L = 12.56 mH, IAR = 7 A) and enables reliable operation in flyback and active-clamp topologies without external protection.
How should the dual-source pins (Source1 and Source2) of TK28V65W be connected in layout?
For optimal performance, connect Source1 exclusively to the gate driver's local ground reference-keeping it short and low-inductance. Route all high-current return paths (e.g., transformer secondary, output capacitor ground) to Source2 pins only. This separation prevents gate noise injection and maintains stable VGS control during switching transitions in the TK28V65W.
What is the gate threshold voltage range for TK28V65W, and how does it affect drive compatibility?
The TK28V65W has a gate threshold voltage (Vth) range of 2.5 V to 3.5 V at VDS = 10 V and ID = 1.6 mA. This ensures reliable turn-on with standard 5 V logic-level drivers and compatibility with 12 V gate supplies, while avoiding unintended conduction during noise transients due to its well-defined enhancement-mode behavior.
Is TK28V65W RoHS-compliant and halogen-free?
Yes, the TK28V65W complies with the EU RoHS Directive and is halogen-free per Toshiba's environmental specifications. Full compliance documentation-including material declarations and test reports-is available upon request from Toshiba or authorized distributors for TK28V65W.
TK28V65W,LQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 4-VSFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 27.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 13.8A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 240W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-DFN-EP (8x8)
TK28V65W,LQ FAQ
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Please submit a Request for Quotation (RFQ) for TK28V65W,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of TK28V65W,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK28V65W,LQ is usually 5 days.
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6.How does Aetrix verify that TK28V65W,LQ is sourced from the original manufacturer or authorized distributors?
All TK28V65W,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK28V65W,LQ meets industry standards.
7.What is the process for return or replacement of TK28V65W,LQ?
All TK28V65W,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK28V65W,LQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK28V65W,LQ part is unused and in its original packaging.
Return procedure for TK28V65W,LQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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