Toshiba Semiconductor and Storage TK290A60Y,S4X

Overview

TK290A60Y from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 0.23 Ω (typ.) R_DS(ON) at V_GS = 10 V, 11.5 A continuous drain current (T_C = 25 °C), and operates with gate threshold voltage of 3–4 V - enabling direct drive from standard PWM controllers in 600 V-class SMPS.

For engineers reviewing the TK290A60Y datasheet, TK290A60Y pinout, TK290A60Y application, or TK290A60Y equivalent, key selection considerations include avalanche ruggedness (E_AS = 114 mJ), MOSFET dv/dt immunity (≥50 V/ns), low Q_gd/Q_g ratio (13/25 nC) for fast hard-switching, and TO-220SIS package thermal performance (R_th(ch-c) = 3.57 °C/W).

Technical Context

This DTMOS™ IV-generation device uses Toshiba's super-junction structure to achieve low conduction loss without sacrificing switching speed. Its optimized charge profile (Q_gs1 = 4 nC, Q_gd = 13 nC) supports clean turn-on/turn-off in flyback and LLC resonant topologies operating up to 100 kHz.

The integrated body diode exhibits t_rr = 240 ns and Q_rr = 2.3 µC under V_GS = 0 V, IDR = 5.8 A, and −dI_DR/dt = 100 A/µs - enabling stable operation in discontinuous conduction mode (DCM) PFC stages and synchronous rectification circuits where reverse recovery behavior critically impacts EMI and efficiency.

Key Specifications

Pinout & Package

TK290A60Y is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with isolated tab - enabling direct mounting to heatsink without insulating washer while maintaining creepage/clearance compliance for Class II isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STW20NK60Z and IPP60R099C7, TK290A60Y offers optimal balance of low R_DS(ON), integrated isolation, and moderate gate charge - making it ideal for cost-sensitive, safety-critical 65–200 W industrial and consumer power supplies where PCB area and thermal management simplicity are prioritized.

Availability

TK290A60Y is available at Aetrix Electronics and suitable for AC-DC adapters, industrial LED drivers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for TK290A60Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of expertise in discrete power transistor design.

TK290A60Y belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating at 600 V class with stringent thermal and safety requirements.

FAQ

What is the maximum continuous drain current rating for TK290A60Y at 100 °C case temperature?

The TK290A60Y supports 7.3 A continuous drain current (I_D) at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220SIS package under sustained high-temperature operation and must be used in thermal design calculations for convection-cooled systems. The TK290A60Y datasheet confirms this rating applies with proper heatsinking and ambient conditions.

Does TK290A60Y have an integrated body diode, and what are its reverse recovery characteristics?

Yes, TK290A60Y includes a monolithic body diode with t_rr = 240 ns (typ.), Q_rr = 2.3 µC (typ.), and I_rr = 20 A (typ.) under V_GS = 0 V, I_DR = 5.8 A, and −dI_DR/dt = 100 A/µs. These values are measured per JEDEC standards and directly impact EMI and efficiency in PFC and synchronous rectifier applications. The TK290A60Y body diode is not optimized for ultra-fast recovery but provides robust performance in standard hard-switched topologies.

Can TK290A60Y be driven directly by a 3.3 V microcontroller GPIO pin?

No - TK290A60Y has a gate threshold voltage (V_th) of 3–4 V and requires ≥10 V gate-source voltage for full enhancement and low R_DS(ON). A 3.3 V GPIO cannot reliably turn on the TK290A60Y, resulting in high conduction loss and thermal runaway. A dedicated gate driver (e.g., TC4420) or level-shifting circuit is required to deliver 10–15 V to the TK290A60Y gate with sufficient peak current.

What is the isolation voltage rating of the TK290A60Y TO-220SIS package?

The TK290A60Y TO-220SIS package provides 2000 V_RMS isolation between the drain terminal (tab) and leads, verified per safety standards for reinforced insulation. This allows direct mounting to a grounded heatsink without insulating hardware in Class I equipment, simplifying thermal design and reducing bill-of-materials cost. The TK290A60Y isolation rating is explicitly stated in its Absolute Maximum Ratings table.

How does TK290A60Y's avalanche energy rating compare to typical 600 V MOSFETs?

TK290A60Y specifies 114 mJ single-pulse avalanche energy (E_AS) at T_ch = 25 °C, which exceeds the industry average of ~60–90 mJ for comparably rated 600 V super-junction MOSFETs. This higher rating enables robust operation in flyback and forward converters subject to transformer leakage spikes or load dump events without requiring external clamping circuits. The TK290A60Y E_AS value is validated per JEDEC JESD24-1 test conditions.