Toshiba Semiconductor and Storage TK290A65Y,S4X

Overview

TK290A65Y from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 650 V V_DSS, 11.5 A continuous drain current (T_C = 25 °C), R_DS(ON) = 0.23 Ω (typ.), and operates with gate threshold voltage of 3–4 V - enabling direct drive from standard logic-level controllers in flyback and PFC stages.

For engineers reviewing the TK290A65Y datasheet, TK290A65Y pinout, TK290A65Y application, or TK290A65Y equivalent, this device is selected for high-efficiency 650 V primary-side switching where low conduction loss, avalanche ruggedness (E_AS = 106 mJ), and TO-220SIS package thermal performance are critical design requirements.

Technical Context

The TK290A65Y employs Toshiba's DTMOS™ IV process to achieve optimized charge balance in the super-junction drift region, reducing R_DS(ON) × Q_g figure-of-merit without sacrificing dv/dt immunity. Its enhancement-mode operation (V_th = 3–4 V) supports gate drive compatibility with 5 V and 10 V controllers, while its integrated body diode exhibits t_rr = 240 ns and Q_rr = 2.3 µC at I_DR = 5.8 A.

Thermal design is enabled by R_th(ch-c) = 3.57 °C/W and isolation voltage rating of 2000 V_RMS, supporting safe mounting on heatsinks in enclosed industrial power supplies. The device is rated for T_ch ≤ 150 °C and features guaranteed single-pulse avalanche capability up to I_AS = 3 A under defined test conditions (V_DD = 90 V, L = 20.9 mH).

Key Specifications

Pinout & Package

TK290A65Y is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with isolated tab, enabling direct heatsink mounting without insulating hardware while maintaining 2000 V_RMS isolation between drain and case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP12N65M2 and IXTH12N65X2, the TK290A65Y offers superior conduction efficiency, certified isolation, and higher avalanche ruggedness in a compact TO-220SIS form factor - making it optimal for space-constrained, thermally demanding industrial power designs where reliability under transient stress is critical.

Availability

TK290A65Y is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and EV charging station PFC stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK290A65Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

The TK290A65Y belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and telecom power conversion systems where thermal robustness and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current rating for TK290A65Y?

The TK290A65Y has a maximum continuous drain current (I_D) of 11.5 A at case temperature T_C = 25 °C, derating to 7.3 A at T_C = 100 °C. This rating assumes proper heatsinking and adherence to the SOA curve in Figure 8.17 of the official datasheet. The TK290A65Y must not exceed 150 °C channel temperature under any operating condition.

Does TK290A65Y support logic-level gate drive?

Yes, the TK290A65Y features an enhancement-mode gate with V_th = 3–4 V (measured at V_DS = 10 V, I_D = 0.45 mA), enabling reliable turn-on with 5 V logic-level signals. However, full R_DS(ON) = 0.23 Ω is specified only at V_GS = 10 V, so 10 V drive is recommended for minimum conduction loss in high-current applications using the TK290A65Y.

What is the isolation voltage rating of TK290A65Y's TO-220SIS package?

The TK290A65Y's TO-220SIS package provides 2000 V_RMS isolation between the drain-connected metal tab and the source/lead frame. This eliminates the need for insulating pads or mica washers when mounting directly to a heatsink - a key advantage over standard TO-220 packages. This isolation rating is verified per JEDEC standards and applies to the TK290A65Y in production units.

Can TK290A65Y replace older DTMOS™ III devices like TK20E65D?

No - the TK290A65Y is not a drop-in replacement for TK20E65D. While both are 650 V DTMOS™ devices, the TK290A65Y has higher R_DS(ON) (0.23 Ω vs. 0.19 Ω), different gate charge profile (Q_g = 25 nC vs. 21 nC), and revised thermal resistance (R_th(ch-c) = 3.57 °C/W). Circuit re-optimization of gate drive and thermal design is required before substituting TK290A65Y for TK20E65D.

Is TK290A65Y RoHS compliant?

Yes, the TK290A65Y is RoHS compliant per EU Directive 2011/65/EU. Marking indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] depending on manufacturing lot. Full environmental compliance documentation, including substance declarations and test reports, is available upon request from Toshiba or through Aetrix Electronics' technical support for the TK290A65Y.