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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK290P60Y,RQ

Name: TK290P60Y,RQ
Brand: Toshiba Semiconductor and Storage
SKU: TK290P60Y,RQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK290P60Y,RQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK290P60Y,RQ.pdf

Description:: MOSFET N-CH 600V 11.5A DPAK

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Product details

Overview

TK290P60Y,RQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using DTMOS™ Super Junction technology, designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 600 V V_DSS, 11.5 A I_D (DC), R_DS(ON) = 0.23 Ω (typ.) at V_GS = 10 V, and operates up to T_ch = 150 °C.

For engineers reviewing the TK290P60Y,RQ datasheet, TK290P60Y,RQ pinout, TK290P60Y,RQ application, or TK290P60Y,RQ equivalent, this device is selected for high-efficiency, high-reliability 600 V primary-side switching where low conduction loss, avalanche ruggedness (E_AS = 114 mJ), and gate drive simplicity are critical.

Technical Context

The TK290P60Y,RQ implements Toshiba's DTMOS™ IV Super Junction architecture to achieve low R_DS(ON) without sacrificing switching speed or avalanche capability. Its enhancement-mode operation (V_th = 3–4 V) ensures reliable turn-on with standard 10 V gate drivers, while its optimized charge profile (Q_g = 25 nC typ., Q_gd/Q_gs1 = 13/4 nC) supports efficient hard-switching in continuous conduction mode (CCM) PFC and LLC resonant topologies.

Thermally, it features a low R_th(ch-c) of 1.25 °C/W and is qualified for operation up to 150 °C channel temperature. The device includes an integrated body diode with t_rr = 240 ns (typ.) and Q_rr = 2.3 µC (typ.), enabling moderate-frequency synchronous rectification support in flyback or quasi-resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports universal-input offline SMPS with margin against line surges and ringing.
R_DS(ON)	0.23 Ω (typ.) at V_GS = 10 V - Enables <1.3 W conduction loss at 5.8 A DC, reducing heatsink requirements.
I_D (DC)	11.5 A at T_c = 25 °C - Sustains full-load current in compact DPAK packages without derating below 75 °C case temp.
E_AS	114 mJ (single-pulse) - Withstands repetitive avalanche events during overvoltage transients in unclamped inductive switching.
Q_g	25 nC (typ.) - Allows fast turn-on with ≤10 Ω gate resistor, minimizing switching loss at 100 kHz in CCM boost PFC stages.
t_r/t_f	25 ns / 8.5 ns (typ.) - Supports high-frequency operation with low gate drive power and reduced EMI generation.
V_th	3–4 V - Ensures clean logic-level compatibility with microcontroller GPIOs and dedicated gate drivers like UCC27531.

Pinout & Package

TK290P60Y,RQ is housed in a surface-mount DPAK (TOSHIBA package code 2-7K1S) with exposed drain pad for thermal performance. The package weighs 0.36 g and supports PCB thermal relief via soldered drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input terminal	Receives voltage-controlled signal to modulate channel conductivity; requires <±30 V rating and ESD protection.
2: Drain	Main high-side current path	Connected to high-voltage rail (e.g., rectified AC line); electrically and thermally coupled to exposed pad.
3: Source	Reference node and current return	Serves as local ground reference for gate drive; ties to power ground plane with low-inductance layout.

Key Features

Feature	Design Value
DTMOS™ Super Junction structure	Enables 600 V rating with 0.23 Ω R_DS(ON), improving power density vs. planar MOSFETs in same package.
Low gate charge ratio (Q_gd/Q_g ≈ 52%)	Reduces Miller-induced switching delay and improves dv/dt immunity during hard commutation.
Guaranteed avalanche energy (E_AS)	114 mJ allows safe operation under inductive load switching without external snubbers in many designs.
Body diode with controlled Q_rr	2.3 µC reverse recovery charge minimizes shoot-through risk and EMI in quasi-resonant flyback converters.
Enhancement-mode threshold	V_th = 3–4 V ensures robust noise immunity and eliminates need for negative gate bias in most applications.

Applications

AC-DC Power Supplies	Industrial Motor Drives
Use Scenario: Primary-side switch in 65–300 W universal-input offline SMPS for LED drivers and industrial control panels. IC Role / Device Role / Timing Role: High-voltage power switch operating in discontinuous or continuous conduction mode at 65–130 kHz. Use Value: Low R_DS(ON) reduces conduction loss by ~22% vs. comparable 600 V MOSFETs, improving efficiency from 87% to 89.5% at full load.	Use Scenario: Inverter leg switch in 0.5–2 kW variable-frequency drives for pumps and conveyors. IC Role / Device Role / Timing Role: Half-bridge high-side switch handling 11.5 A RMS motor current with 600 V bus voltage. Use Value: Avalanche ruggedness enables reliable operation during motor stall or short-circuit events without external clamping.
Telecom Rectifiers	Server PSU Front-End
Use Scenario: Active clamp forward or LLC resonant converter in -48 V telecom rectifier modules. IC Role / Device Role / Timing Role: Main switching element in high-efficiency 92%+ rectifier stage operating at 200–500 kHz. Use Value: Optimized C_iss/C_oss ratio (730 pF / 26 pF) improves ZVS behavior and reduces switching loss at elevated frequencies.	Use Scenario: Primary switch in 1 kW server ATX PSUs with active PFC + LLC topology. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode PFC stage, conducting 11.5 A peak current. Use Value: Low Q_g and fast t_r/t_f reduce gate drive loss and enable >96% PFC efficiency at 230 VAC input.

AC-DC Power Supplies

Industrial Motor Drives

Use Scenario: Primary-side switch in 65–300 W universal-input offline SMPS for LED drivers and industrial control panels.

IC Role / Device Role / Timing Role: High-voltage power switch operating in discontinuous or continuous conduction mode at 65–130 kHz.

Use Value: Low R_DS(ON) reduces conduction loss by ~22% vs. comparable 600 V MOSFETs, improving efficiency from 87% to 89.5% at full load.

Use Scenario: Inverter leg switch in 0.5–2 kW variable-frequency drives for pumps and conveyors.

IC Role / Device Role / Timing Role: Half-bridge high-side switch handling 11.5 A RMS motor current with 600 V bus voltage.

Use Value: Avalanche ruggedness enables reliable operation during motor stall or short-circuit events without external clamping.

Telecom Rectifiers

Server PSU Front-End

Use Scenario: Active clamp forward or LLC resonant converter in -48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Main switching element in high-efficiency 92%+ rectifier stage operating at 200–500 kHz.

Use Value: Optimized C_iss/C_oss ratio (730 pF / 26 pF) improves ZVS behavior and reduces switching loss at elevated frequencies.

Use Scenario: Primary switch in 1 kW server ATX PSUs with active PFC + LLC topology.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode PFC stage, conducting 11.5 A peak current.

Use Value: Low Q_g and fast t_r/t_f reduce gate drive loss and enable >96% PFC efficiency at 230 VAC input.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20NK60Z	600 V, 12 A, R_DS(ON) = 0.35 Ω (typ.), Zener-protected gate, higher Q_g = 45 nC	Better ESD robustness but higher conduction loss; slower switching limits >100 kHz use	Prefer TK290P60Y,RQ for efficiency-critical, high-frequency PFC; STW20NK60Z suits cost-sensitive, lower-frequency industrial SMPS.
IXTH12N60L2	600 V, 12 A, R_DS(ON) = 0.32 Ω (typ.), ultra-low Q_gd/Q_g = 0.25, enhanced dv/dt immunity	Superior noise immunity in noisy motor drive environments; slightly higher R_DS(ON) increases conduction loss	Prefer TK290P60Y,RQ for balanced efficiency/size in telecom/server PSUs; IXTH12N60L2 preferred for EMI-sensitive motor control with high dv/dt stress.

Compared with STW20NK60Z and IXTH12N60L2, the TK290P60Y,RQ offers the lowest R_DS(ON) among the three, delivering superior conduction efficiency in space-constrained 600 V applications, while maintaining adequate switching speed and avalanche capability without requiring gate Zener clamping.

Availability

TK290P60Y,RQ is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for TK290P60Y,RQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in silicon power MOSFETs and IGBTs.

The TK290P60Y,RQ belongs to Toshiba's DTMOS™ IV Super Junction MOSFET product line, engineered specifically for high-efficiency, high-reliability 600 V switching in offline power conversion systems.

FAQ

What is the maximum continuous drain current for TK290P60Y,RQ at 100 °C case temperature?

The TK290P60Y,RQ supports 7.3 A I_D (DC) at T_c = 100 °C, as specified in its Absolute Maximum Ratings table. This derated current reflects thermal limitations of the DPAK package and ensures channel temperature remains within the 150 °C limit under sustained operation with proper PCB copper area and airflow.

Does TK290P60Y,RQ have built-in gate protection?

No, the TK290P60Y,RQ does not integrate gate Zener protection. Its absolute maximum V_GSS is ±30 V, and Toshiba explicitly warns that the device is sensitive to electrostatic discharge. External gate resistors (e.g., 10–25 Ω) and TVS clamps are recommended to prevent overvoltage damage during layout or operation.

Can TK290P60Y,RQ be used in avalanche mode repeatedly?

The TK290P60Y,RQ is rated for single-pulse avalanche energy (E_AS) of 114 mJ, but Toshiba does not specify repetitive avalanche capability. For designs requiring repeated unclamped inductive switching, additional circuit protection (e.g., RCD snubber) is required-relying on TK290P60Y,RQ's E_AS rating alone is insufficient for long-term reliability.

What is the typical reverse recovery time of the body diode in TK290P60Y,RQ?

The TK290P60Y,RQ body diode has a typical reverse recovery time (t_rr) of 240 ns at I_DR = 11.5 A and dI_DR/dt = 100 A/µs. This value is measured under standardized conditions and supports quasi-resonant operation in flyback converters, though soft-recovery diodes remain preferable for zero-voltage switching topologies.

Is TK290P60Y,RQ RoHS compliant and lead-free?

Yes, TK290P60Y,RQ is RoHS compliant and lead-free, per Toshiba's environmental documentation. The "RQ" suffix denotes tape-and-reel packaging with lead-free termination finish, meeting EU RoHS Directive 2011/65/EU and JEDEC J-STD-609 Category 3 requirements for Pb-free solderability.

TK290P60Y,RQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 450µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 730 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK290P60Y,RQ FAQ

1.How can I place an order for TK290P60Y,RQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK290P60Y,RQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK290P60Y,RQ reliable?

The price and inventory of TK290P60Y,RQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK290P60Y,RQ is usually 5 days.

3.What payment methods are accepted for TK290P60Y,RQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK290P60Y,RQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK290P60Y,RQ?

TK290P60Y,RQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK290P60Y,RQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK290P60Y,RQ?

For technical support, including TK290P60Y,RQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK290P60Y,RQ requirements.

6.How does Aetrix verify that TK290P60Y,RQ is sourced from the original manufacturer or authorized distributors?

All TK290P60Y,RQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK290P60Y,RQ meets industry standards.

7.What is the process for return or replacement of TK290P60Y,RQ?

All TK290P60Y,RQ units undergo pre-shipment inspection (PSI). If there is an issue with TK290P60Y,RQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK290P60Y,RQ part is unused and in its original packaging.

Return procedure for TK290P60Y,RQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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