Toshiba Semiconductor and Storage TK290P65Y,RQ

Overview

TK290P65Y from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 650 V V_DSS, 0.23 Ω R_DS(ON) (typ.), and 11.5 A continuous drain current at T_C = 25 °C, enabling efficient operation in flyback and PFC stages.

For engineers reviewing the TK290P65Y datasheet, TK290P65Y pinout, TK290P65Y application, or TK290P65Y equivalent, this device is evaluated for high-efficiency, high-reliability 650 V switching in constrained thermal environments-particularly where low conduction loss, controlled gate drive, and avalanche ruggedness are critical selection criteria.

Technical Context

The TK290P65Y implements Toshiba's DTMOS™ IV process with optimized cell pitch and trench depth to achieve low R_DS(ON) × Q_g figure-of-merit. Its enhancement-mode gate threshold (V_th = 3–4 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.

Thermal design is supported by a channel-to-case thermal resistance of 1.25 °C/W and a maximum channel temperature rating of 150 °C. The device features single-pulse avalanche energy rating of 106 mJ and MOSFET dv/dt ruggedness ≥50 V/ns, confirming robustness under transient overvoltage conditions in hard-switched topologies.

Key Specifications

Pinout & Package

TK290P65Y is housed in a surface-mount DPAK (TO-252AA) package, designated as TOSHIBA 2-7K1S, with 0.36 g typical mass and 1.25 °C/W channel-to-case thermal resistance. The package supports high-power density PCB layouts and is compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP12N65M2 and IPP65R280C7, the TK290P65Y offers the lowest R_DS(ON) in DPAK format and a verified 106 mJ avalanche rating-making it optimal for space-constrained, high-efficiency 650 V SMPS where thermal performance and transient robustness are prioritized over gate drive simplicity or mechanical form factor.

Availability

TK290P65Y is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, flyback converters, and power factor correction circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK290P65Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET process technology.

The TK290P65Y belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 650 V.

FAQ

What is the maximum continuous drain current rating for TK290P65Y?

The TK290P65Y has a maximum continuous drain current (I_D) of 11.5 A at case temperature T_C = 25 °C. At T_C = 100 °C, the rating drops to 7.3 A due to thermal derating. This reflects real-world thermal limits in heatsink-mounted applications and must be validated against actual board-level thermal resistance in the final design. The TK290P65Y datasheet specifies these values under defined test conditions and should be used with appropriate safety margins.

Does TK290P65Y have an integrated body diode, and what are its key parameters?

Yes, the TK290P65Y includes an integrated body diode with a forward voltage (V_DSF) of ≤ −1.7 V at I_DR = 11.5 A and reverse recovery time (t_rr) of 240 ns (typ.). Its reverse recovery charge (Q_rr) is 2.3 µC, supporting use in flyback and resonant converters where diode conduction occurs during dead-time intervals. These parameters are measured per the TK290P65Y datasheet under standardized test conditions.

What is the gate threshold voltage range for TK290P65Y, and how does it affect drive circuit design?

The TK290P65Y has a gate threshold voltage (V_th) range of 3–4 V at V_DS = 10 V and I_D = 0.45 mA. This enhancement-mode specification ensures reliable turn-off at 0 V gate bias and clean turn-on with standard 10 V gate drivers. Because V_th is well above typical noise levels, the TK290P65Y avoids spurious conduction in noisy industrial environments without requiring additional gate pull-down components.

Is TK290P65Y suitable for avalanche-prone topologies like flyback without external snubbers?

Yes, the TK290P65Y is fully rated for single-pulse avalanche with E_AS = 106 mJ (T_ch = 25 °C), verified per JEDEC JESD24-11. This makes it suitable for flyback and other inductive-switching topologies where voltage overshoot occurs during turn-off. However, repeated avalanche operation is not recommended; the TK290P65Y should be operated within SOA limits, and layout parasitics must be minimized to avoid exceeding the rated E_AS in practice.

What package type does TK290P65Y use, and what are its thermal characteristics?

The TK290P65Y uses the DPAK (TO-252AA) surface-mount package, identified by Toshiba as 2-7K1S, with a typical weight of 0.36 g. Its channel-to-case thermal resistance (R_th(ch-c)) is 1.25 °C/W, and channel-to-ambient resistance (R_th(ch-a)) is 125 °C/W. These values define heat transfer paths in PCB-mounted designs and directly impact maximum power dissipation-critical for thermal design validation of the TK290P65Y in production systems.