Toshiba Semiconductor and Storage TK2K2A60F,S4X

Overview

TK2K2A60F,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline AC-DC converters and auxiliary power supplies. It delivers 600 V drain-source breakdown voltage, 1.82 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 1.8 A, 3.5 A DC drain current, and operates with gate threshold voltage of 2–4 V - enabling direct drive from standard PWM controllers in 24–48 V control rails.

For engineers reviewing the TK2K2A60F,S4X datasheet, TK2K2A60F,S4X pinout, TK2K2A60F,S4X application, or TK2K2A60F,S4X equivalent, key selection criteria include avalanche ruggedness (78 mJ), low gate charge (13 nC total), TO-220SIS package thermal resistance (4.16 °C/W channel-to-case), and integrated body diode performance (600 ns reverse recovery time, 2.9 µC Q_rr).

Technical Context

This MOSFET employs a planar vertical structure optimized for fast switching and robust avalanche capability. Its enhancement-mode operation with V_th = 2–4 V ensures reliable turn-on with industry-standard 5 V or 10 V gate drivers, while the low C_iss (450 pF) and C_rss (3.6 pF) support high-frequency operation up to 100 kHz in hard-switched topologies.

Thermal design is enabled by its TO-220SIS package with isolated source terminal, allowing direct heatsink mounting without insulating hardware. The device's guaranteed single-pulse avalanche energy of 78 mJ and dv/dt ruggedness ≥12 V/ns provide margin against transient overvoltage and commutation stress in flyback and forward converters.

Key Specifications

Pinout & Package

TK2K2A60F,S4X is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with electrically isolated source terminal - eliminating need for thermal pads or insulators when mounted to grounded heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP3NK60ZFP and IXTP2N60P, TK2K2A60F,S4X offers superior conduction efficiency (1.82 Ω vs ≥2.2 Ω), higher DC current capability (3.5 A), and critical source-isolation - directly reducing thermal interface complexity and improving long-term reliability in thermally constrained industrial enclosures.

Availability

TK2K2A60F,S4X is available at Aetrix Electronics and suitable for AC-DC auxiliary power supplies, flyback converter primary switches, and industrial control logic power designs requiring stable component supply and long-lifecycle support.

Supply support for TK2K2A60F,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET development expertise.

The π-MOSⅣ series, including TK2K2A60F,S4X, was engineered for high-efficiency, high-reliability offline switching applications - particularly auxiliary power stages and low-power flyback converters in industrial and infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for TK2K2A60F,S4X?

The TK2K2A60F,S4X has a DC drain current rating of 3.5 A at T_c = 25 °C. This value decreases with increasing case temperature - for example, it drops to approximately 2.0 A at T_c = 100 °C per the SOA curve in Figure 8.17. Derating must follow the guaranteed maximum PD vs. T_c curve (Fig. 8.15) to avoid thermal runaway.

Does TK2K2A60F,S4X have an integrated body diode, and what are its key recovery parameters?

Yes, TK2K2A60F,S4X includes a monolithic body diode with reverse recovery time (t_rr) of 600 ns and reverse recovery charge (Q_rr) of 2.9 µC under specified test conditions (IDR = 3.5 A, dIDR/dt = 100 A/µs). These values are measured and guaranteed, making TK2K2A60F,S4X suitable for quasi-resonant flyback and other topologies where diode recovery behavior impacts efficiency and EMI.

What is the gate threshold voltage range for TK2K2A60F,S4X, and how does it affect drive requirements?

The gate threshold voltage (V_th) for TK2K2A60F,S4X is specified as 2–4 V at V_DS = 10 V and I_D = 0.35 mA. This enhancement-mode range ensures reliable turn-on with standard 5 V logic-level drivers and compatibility with PWM controllers such as UC3842 or TL494, while maintaining adequate noise margin against false triggering.

Is TK2K2A60F,S4X RoHS compliant, and what marking indicates compliance?

Yes, TK2K2A60F,S4X is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-underlined markings indicate lead-containing versions. Full environmental compliance details are available through Toshiba's sales representatives and product labeling guidelines.

What thermal resistance values apply to TK2K2A60F,S4X, and how do they impact heatsink selection?

TK2K2A60F,S4X specifies R_th(ch-c) = 4.16 °C/W (channel-to-case) and R_th(ch-a) = 62.5 °C/W (channel-to-ambient). For a 30 W power dissipation target and max channel temperature of 150 °C, the case temperature must remain ≤125 °C - requiring a heatsink with thermal resistance ≤21.5 °C/W (including interface material) to maintain safe operation under worst-case ambient conditions.