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Toshiba Semiconductor and Storage TK2P60D(TE16L1,NV)

Name: TK2P60D(TE16L1,NV)
Brand: Toshiba Semiconductor and Storage
SKU: TK2P60D(TE16L1,NV)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK2P60D(TE16L1,NV)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK2P60D(TE16L1,NV).pdf

Description:: MOSFET N-CH 600V 2A PW-MOLD

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Product details

Overview

TK2P60D(TE16L1,NV) from Toshiba is a silicon N-channel power MOSFET designed for high-voltage switching regulator applications. It features 600 V drain-source breakdown voltage (V_(BR)DSS), 3.3 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 1 A, 1.0 S typical forward transfer admittance (|Y_fs|), and 10 μA maximum drain cut-off current at 600 V - enabling efficient high-voltage DC-DC conversion in industrial SMPS.

For engineers reviewing the TK2P60D(TE16L1,NV) datasheet, TK2P60D(TE16L1,NV) pinout, TK2P60D(TE16L1,NV) application, or TK2P60D(TE16L1,NV) equivalent, key selection criteria include avalanche ruggedness (101 mJ single-pulse E_AS), thermal resistance (R_th(ch-c) = 2.08 °C/W), gate threshold range (2.4–4.4 V), and integrated body diode performance (t_rr = 550 ns, Q_rr = 2.2 μC).

Technical Context

This π-MOSⅦ-generation device operates as an enhancement-mode transistor with a gate threshold voltage window of 2.4–4.4 V, ensuring reliable turn-on under varied drive conditions while maintaining low leakage (I_DSS ≤ 10 μA at 600 V). Its 60 W drain power dissipation at T_c = 25°C and 2.08 °C/W channel-to-case thermal resistance support thermally constrained PCB layouts.

The MOSFET integrates a fast-recovery body diode with t_rr = 550 ns and Q_rr = 2.2 μC under defined test conditions (I_DR = 2 A, dI_DR/dt = 100 A/μs), making it suitable for hard-switched topologies where reverse recovery behavior directly impacts efficiency and EMI. Avalanche capability is validated per JEDEC JESD24-1 with E_AS = 101 mJ at V_DD = 90 V, L = 44.1 mH, I_AR = 2 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - supports primary-side switching in offline 400 V AC-input SMPS without derating
R_DS(ON)	3.3 Ω (typ.) - enables low conduction loss at 1 A continuous drain current
\|Y_fs\|	1.0 S (typ.) - provides strong transconductance for stable gate drive response
E_AS	101 mJ - ensures robustness against single-event inductive energy spikes in flyback/LLC circuits
t_rr / Q_rr	550 ns / 2.2 μC - reduces switching loss and voltage overshoot during diode commutation
R_th(ch-c)	2.08 °C/W - allows direct heatsink mounting to sustain 60 W power dissipation at safe junction temperature
V_th	2.4–4.4 V - guarantees turn-on compatibility with standard 5 V or 10 V gate drivers

Pinout & Package

TK2P60D(TE16L1,NV) uses the 2-7J1B package - a TO-220AB variant with isolated heat sink tab (drain-connected), standardized for high-power through-hole mounting and thermal management. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1. GATE	Control electrode	Receives gate drive signal; requires <±30 V rating and low-impedance drive due to 7 nC total gate charge
2. DRAIN (HEAT SINK)	High-voltage power output	Internally bonded to metal tab; must be electrically isolated from chassis unless system ground reference permits
3. SOURCE	Power return and reference node	Serves as local ground for gate drive; carries full load current and influences layout parasitics in high-dI/dt switching

Key Features

Feature	Design Value
Low R_DS(ON) with high V_DSS	3.3 Ω @ 600 V enables higher efficiency than legacy 500 V MOSFETs in same footprint
Fast body diode recovery	550 ns t_rr and 2.2 μC Q_rr reduce cross-conduction loss in synchronous rectification and resonant converters
Avalanche-rated operation	101 mJ E_AS allows safe operation under unclamped inductive switching without external snubbers
Enhancement-mode gate	2.4–4.4 V V_th ensures predictable turn-on with industry-standard logic-level or PWM controllers
Thermally optimized package	2.08 °C/W R_th(ch-c) supports >60 W conduction in compact heatsink designs without forced air

Applications

Industrial Switch-Mode Power Supplies	AC-DC Adapters for Office Equipment
Use Scenario: Primary-side switch in 65–150 W offline flyback converters powering PLCs and industrial HMIs. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 65–130 kHz with hard-switched gate drive. Use Value: 600 V rating eliminates need for voltage clamping networks; 3.3 Ω R_DS(ON) maintains >88% efficiency at full load across universal AC input.	Use Scenario: Main switching transistor in compact 45–90 W AC-DC adapters for printers, scanners, and network switches. IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant (QR) flyback topology; driven by dedicated QR controller IC with valley-switching detection. Use Value: Low Q_gd/Q_g ratio (3 nC / 7 nC) improves light-load efficiency; 550 ns body diode t_rr minimizes switching noise during boundary conduction mode.
LED Driver Power Stages	DC-DC Boost Converters for EV Charging Modules
Use Scenario: High-side switch in constant-current boost LED drivers for street lighting and commercial signage (30–100 W). IC Role / Device Role / Timing Role: Regulates LED string current via duty-cycle control; subjected to repetitive 600 V transient stress during open-circuit fault events. Use Value: 101 mJ E_AS withstands repeated open-circuit surges without degradation; 10 μA I_DSS prevents standby power waste in always-on systems.	Use Scenario: Boost switch in 400–800 V DC-DC stage of Level 2 EV on-board chargers (OBCs), stepping up battery voltage for AC/DC front-end. IC Role / Device Role / Timing Role: High-voltage power switch operating at 100–200 kHz in interleaved boost configuration; handles bidirectional current during regenerative braking phases. Use Value: Integrated body diode with 2.2 μC Q_rr reduces reverse recovery loss during phase-shift transitions; 2.08 °C/W R_th(ch-c) sustains 60 W dissipation in sealed OBC enclosures.

Industrial Switch-Mode Power Supplies

AC-DC Adapters for Office Equipment

Use Scenario: Primary-side switch in 65–150 W offline flyback converters powering PLCs and industrial HMIs.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 65–130 kHz with hard-switched gate drive.

Use Value: 600 V rating eliminates need for voltage clamping networks; 3.3 Ω R_DS(ON) maintains >88% efficiency at full load across universal AC input.

Use Scenario: Main switching transistor in compact 45–90 W AC-DC adapters for printers, scanners, and network switches.

IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant (QR) flyback topology; driven by dedicated QR controller IC with valley-switching detection.

Use Value: Low Q_gd/Q_g ratio (3 nC / 7 nC) improves light-load efficiency; 550 ns body diode t_rr minimizes switching noise during boundary conduction mode.

LED Driver Power Stages

DC-DC Boost Converters for EV Charging Modules

Use Scenario: High-side switch in constant-current boost LED drivers for street lighting and commercial signage (30–100 W).

IC Role / Device Role / Timing Role: Regulates LED string current via duty-cycle control; subjected to repetitive 600 V transient stress during open-circuit fault events.

Use Value: 101 mJ E_AS withstands repeated open-circuit surges without degradation; 10 μA I_DSS prevents standby power waste in always-on systems.

Use Scenario: Boost switch in 400–800 V DC-DC stage of Level 2 EV on-board chargers (OBCs), stepping up battery voltage for AC/DC front-end.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 100–200 kHz in interleaved boost configuration; handles bidirectional current during regenerative braking phases.

Use Value: Integrated body diode with 2.2 μC Q_rr reduces reverse recovery loss during phase-shift transitions; 2.08 °C/W R_th(ch-c) sustains 60 W dissipation in sealed OBC enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 0.72 Ω R_DS(ON), 130 mJ E_AS, TO-220FP package (isolated tab)	Lower R_DS(ON) but higher gate charge (28 nC); requires stronger gate driver	Preferred for higher-efficiency, lower-power (<50 W) designs where gate drive strength is available
IXTP50N10D2	100 V, 0.022 Ω R_DS(ON), 100 mJ E_AS, TO-220 package	Not rated for 600 V operation; unsuitable for direct AC-line switching	Only viable in low-voltage secondary-side or DC-DC stages where bus voltage remains <100 V

Compared with STP6NK60ZFP and IXTP50N10D2, TK2P60D(TE16L1,NV) offers balanced trade-offs: moderate R_DS(ON) with low gate charge (7 nC), proven 600 V ruggedness, and body diode specs optimized for flyback/boost topologies - making it especially suitable for cost-sensitive, thermally constrained industrial SMPS where gate drive simplicity and avalanche margin are prioritized over ultra-low conduction loss.

Availability

TK2P60D(TE16L1,NV) is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, AC-DC adapters for office equipment, and LED driver power stages requiring stable component supply and long-term lifecycle support.

Supply support for TK2P60D(TE16L1,NV) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete transistor design and reliability engineering.

TK2P60D(TE16L1,NV) belongs to Toshiba's π-MOSⅦ series of high-voltage N-channel MOSFETs, engineered specifically for high-efficiency, high-reliability switching regulators in industrial and consumer power conversion systems.

FAQ

What is the maximum continuous drain current for TK2P60D(TE16L1,NV) at 25°C case temperature?

The maximum continuous drain current (I_D) for TK2P60D(TE16L1,NV) is 2 A at T_c = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature below 150°C. At elevated case temperatures, the current must be derated linearly per the Safe Operating Area curve - for example, to ~1.3 A at T_c = 100°C. TK2P60D(TE16L1,NV) also supports 8 A pulsed drain current (I_DP) for t ≤ 1 ms.

Does TK2P60D(TE16L1,NV) have an integrated body diode, and what are its key recovery characteristics?

Yes, TK2P60D(TE16L1,NV) includes an integrated source-drain body diode. Its reverse recovery time (t_rr) is 550 ns and reverse recovery charge (Q_rr) is 2.2 μC when tested at I_DR = 2 A, V_GS = 0 V, and dI_DR/dt = 100 A/μs. These values are critical for minimizing switching loss and voltage overshoot in flyback and boost converters. TK2P60D(TE16L1,NV)'s body diode is not optimized for ultra-fast synchronous rectification but performs reliably in standard hard-switched topologies.

What is the gate threshold voltage range for TK2P60D(TE16L1,NV), and how does it affect drive circuit design?

The gate threshold voltage (V_th) for TK2P60D(TE16L1,NV) ranges from 2.4 V to 4.4 V at V_DS = 10 V and I_D = 1 mA. This wide range ensures consistent turn-on across process and temperature variations. To guarantee full enhancement, gate drive should exceed 10 V - at which point R_DS(ON) is specified at 3.3 Ω (typ.). TK2P60D(TE16L1,NV) is compatible with standard 12 V or 15 V gate drivers but may require level-shifting for 3.3 V logic interfaces.

Can TK2P60D(TE16L1,NV) be used in avalanche mode, and what is its single-pulse avalanche energy rating?

Yes, TK2P60D(TE16L1,NV) is fully rated for single-pulse avalanche operation with E_AS = 101 mJ under defined test conditions (V_DD = 90 V, L = 44.1 mH, I_AR = 2 A, T_ch = 25°C). This rating confirms its ability to absorb inductive energy without failure during unclamped inductive switching events - such as transformer leakage spikes in flyback converters. Repetitive avalanche is limited to 6 mJ per pulse, and thermal limits must be observed.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK2P60D(TE16L1,NV), and how does it impact heatsink selection?

The channel-to-case thermal resistance (R_th(ch-c)) for TK2P60D(TE16L1,NV) is 2.08 °C/W. With a maximum channel temperature of 150°C and ambient or heatsink temperature of 70°C, this allows up to ~38 W of steady-state power dissipation before exceeding thermal limits. For full 60 W PD capability, a heatsink must maintain case temperature near 25°C - achievable with ≥10 cm² aluminum finned heatsink and natural convection. TK2P60D(TE16L1,NV)'s low R_th(ch-c) simplifies thermal design compared to alternatives above 3.0 °C/W.

TK2P60D(TE16L1,NV) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 7 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PW-MOLD

TK2P60D(TE16L1,NV) FAQ

1.How can I place an order for TK2P60D(TE16L1,NV) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK2P60D(TE16L1,NV) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK2P60D(TE16L1,NV) reliable?

The price and inventory of TK2P60D(TE16L1,NV) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK2P60D(TE16L1,NV) is usually 5 days.

3.What payment methods are accepted for TK2P60D(TE16L1,NV)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK2P60D(TE16L1,NV) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK2P60D(TE16L1,NV)?

TK2P60D(TE16L1,NV) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK2P60D(TE16L1,NV) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK2P60D(TE16L1,NV)?

For technical support, including TK2P60D(TE16L1,NV) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK2P60D(TE16L1,NV) requirements.

6.How does Aetrix verify that TK2P60D(TE16L1,NV) is sourced from the original manufacturer or authorized distributors?

All TK2P60D(TE16L1,NV) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK2P60D(TE16L1,NV) meets industry standards.

7.What is the process for return or replacement of TK2P60D(TE16L1,NV)?

All TK2P60D(TE16L1,NV) units undergo pre-shipment inspection (PSI). If there is an issue with TK2P60D(TE16L1,NV), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK2P60D(TE16L1,NV) part is unused and in its original packaging.

Return procedure for TK2P60D(TE16L1,NV):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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