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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK2R9E10PL,S1X

Name: TK2R9E10PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK2R9E10PL,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK2R9E10PL,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK2R9E10PL,S1X.pdf

Description:: PB-F POWER MOSFET TRANSISTOR TO-

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Product details

Overview

TK2R9E10PL,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H series, designed for high-current switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 2.4 mΩ (typ.) at V_GS = 10 V, Q_SW = 48 nC (typ.), Q_oss = 164 nC (typ.), and supports 100 A DC drain current with TO-220 package thermal performance.

For engineers reviewing the TK2R9E10PL,S1X datasheet, TK2R9E10PL,S1X pinout, TK2R9E10PL,S1X application, or TK2R9E10PL,S1X equivalent, key selection criteria include low conduction loss, fast switching capability under 50 V bus conditions, avalanche ruggedness (E_AS = 278 mJ), and gate drive compatibility with standard 10 V logic-level controllers.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to minimize R_DS(ON) and output charge while maintaining robust avalanche energy rating (278 mJ) and low gate resistance (2.2 Ω). Its enhancement-mode threshold (V_th = 1.5–2.5 V) enables reliable turn-on with 4.5 V gate drive, and its 100 V V_DSS rating targets mid-voltage industrial and automotive auxiliary systems.

The device integrates an intrinsic body diode with t_rr = 150 ns (typ.) and Q_rr = 500 nC (max), supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by R_th(ch-c) = 0.49 °C/W and TO-220 heatsink-compatible drain tab (Pin 2).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports 48 V and 60 V nominal bus systems with 20 % derating margin
R_DS(ON) (V_GS = 10 V)	2.4 mΩ (typ.) - Enables <1 W conduction loss at 50 A continuous current
Q_SW	48 nC (typ.) - Reduces switching energy loss in 100–500 kHz DC-DC stages
E_AS	278 mJ - Withstands single-pulse inductive energy without failure in motor drive freewheeling
I_D (DC)	100 A - Limited by package thermal capacity; requires heatsink for sustained operation
C_iss	9500 pF (typ.) - Determines gate drive strength requirement for <50 ns rise time
V_th	1.5–2.5 V - Ensures clean turn-on with 3.3 V or 5 V microcontroller GPIOs

Pinout & Package

TK2R9E10PL,S1X uses the industry-standard TO-220 package (TOSHIBA designation: 2-10X1A), with Pin 2 electrically connected to the drain and thermally bonded to the heatsink tab. The package weighs 1.96 g and supports mounting torque up to 0.6 N·m.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring <48 nC total charge for full enhancement; sensitive to ESD
2	Drain (heatsink)	Main high-side or low-side power path; electrically and thermally coupled to case for efficient heat transfer
3	Source	Reference node for gate drive; connects to ground or low-side switch node in half-bridge configurations

Key Features

Feature	Design Value
U-MOS-H trench process	Reduces R_DS(ON) × Q_g figure-of-merit by >30 % vs. prior U-MOS generations
Low Q_oss	164 nC (typ.) minimizes Miller-induced shoot-through risk in high-frequency bridge designs
High avalanche energy rating	278 mJ single-pulse withstand enables reliable operation in inductive load switching without snubbers
Body diode with controlled Q_rr	500 nC (max) reverse recovery charge supports ZVS-assisted soft switching in resonant topologies
Enhancement-mode gate	Guaranteed turn-off at 0 V gate bias; eliminates need for negative gate drive in most applications

Applications

Server VRM Power Stage	Industrial BLDC Motor Inverter
Use Scenario: High-density 48 V input buck converter supplying CPU core voltage with 500 kHz switching frequency. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase VRM stage, conducting >60 A peak per phase. Use Value: 2.4 mΩ R_DS(ON) limits conduction loss to <0.8 W/phase; 48 nC Q_SW enables efficient 10 V gate drive with minimal driver IC loading.	Use Scenario: 3-phase inverter driving 1–3 kW permanent-magnet BLDC motor in factory automation equipment. IC Role / Device Role / Timing Role: High-current low-side switch in IGBT/MOSFET hybrid inverter leg, handling 100 A DC motor current. Use Value: TO-220 heatsink interface and 0.49 °C/W R_th(ch-c) allow direct bolt-down thermal management; 278 mJ E_AS absorbs inductive kickback during PWM dead-time transitions.
Telecom 48 V DC-DC Converter	EV Onboard Charger Auxiliary Supply
Use Scenario: Isolated forward converter generating 12 V/20 A auxiliary power from 48 V telecom rack supply. IC Role / Device Role / Timing Role: Primary-side active clamp switch operating at 200 kHz with 50 V V_DS stress. Use Value: 100 V V_DSS provides 2× voltage margin over 48 V bus transients; low C_iss (9500 pF) reduces gate drive power consumption.	Use Scenario: Non-isolated buck regulator powering control logic and gate drivers inside 6.6 kW OBC module. IC Role / Device Role / Timing Role: High-efficiency power switch in 12 V/15 A secondary-side regulator fed from OBC DC-link. Use Value: 10 µA I_DSS max ensures negligible standby leakage; 1.5–2.5 V V_th guarantees stable turn-on across temperature with 3.3 V MCU outputs.

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 48 V input buck converter supplying CPU core voltage with 500 kHz switching frequency.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase VRM stage, conducting >60 A peak per phase.

Use Value: 2.4 mΩ R_DS(ON) limits conduction loss to <0.8 W/phase; 48 nC Q_SW enables efficient 10 V gate drive with minimal driver IC loading.

Use Scenario: 3-phase inverter driving 1–3 kW permanent-magnet BLDC motor in factory automation equipment.

IC Role / Device Role / Timing Role: High-current low-side switch in IGBT/MOSFET hybrid inverter leg, handling 100 A DC motor current.

Use Value: TO-220 heatsink interface and 0.49 °C/W R_th(ch-c) allow direct bolt-down thermal management; 278 mJ E_AS absorbs inductive kickback during PWM dead-time transitions.

Telecom 48 V DC-DC Converter

EV Onboard Charger Auxiliary Supply

Use Scenario: Isolated forward converter generating 12 V/20 A auxiliary power from 48 V telecom rack supply.

IC Role / Device Role / Timing Role: Primary-side active clamp switch operating at 200 kHz with 50 V V_DS stress.

Use Value: 100 V V_DSS provides 2× voltage margin over 48 V bus transients; low C_iss (9500 pF) reduces gate drive power consumption.

Use Scenario: Non-isolated buck regulator powering control logic and gate drivers inside 6.6 kW OBC module.

IC Role / Device Role / Timing Role: High-efficiency power switch in 12 V/15 A secondary-side regulator fed from OBC DC-link.

Use Value: 10 µA I_DSS max ensures negligible standby leakage; 1.5–2.5 V V_th guarantees stable turn-on across temperature with 3.3 V MCU outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	R_DS(ON) = 3.2 mΩ (V_GS = 10 V); Q_g = 130 nC; TO-220FP package (isolated tab)	Higher conduction loss (+33 %), larger gate charge (+81 %), but offers fully insulated drain tab	Prefer when electrical isolation of heatsink is mandatory; accept higher switching loss in lower-frequency (<100 kHz) designs
IRF3205PBF	R_DS(ON) = 8.0 mΩ (V_GS = 10 V); Q_oss = 420 nC; legacy TrenchFET process	Significantly higher R_DS(ON) and Q_oss reduce efficiency in high-current/high-frequency use cases	Select only for cost-sensitive, low-performance replacements where thermal headroom exists and switching frequency ≤ 50 kHz

Compared with STP100N10F7 and IRF3205PBF, TK2R9E10PL,S1X delivers superior power density via lower R_DS(ON) and Q_SW, enabling smaller heatsinks and higher-frequency operation-critical for space-constrained server VRMs and EV auxiliary supplies.

Availability

TK2R9E10PL,S1X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across industrial, telecom, and automotive auxiliary power applications.

Supply support for TK2R9E10PL,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.

The TK2R9E10PL,S1X belongs to Toshiba's U-MOS-H power MOSFET family, engineered specifically for high-current, high-efficiency switching in 48–100 V industrial and automotive power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK2R9E10PL,S1X?

The TK2R9E10PL,S1X is rated for 100 A DC drain current at T_c = 25 °C. This rating is limited by package thermal capability-not silicon-so actual usable current depends on heatsink design and ambient conditions. At T_c = 100 °C, the safe continuous current drops to approximately 60 A due to thermal derating per the PD–Tc curve.

Does TK2R9E10PL,S1X require negative gate voltage for reliable turn-off?

No, TK2R9E10PL,S1X is an enhancement-mode MOSFET with V_th = 1.5–2.5 V, meaning it remains fully off at 0 V gate-source voltage. Negative gate drive is not required. However, applying –5 V to –10 V gate voltage improves noise immunity and ensures complete depletion during high-dv/dt switching events in bridge configurations.

Can TK2R9E10PL,S1X be used in avalanche mode repeatedly?

The TK2R9E10PL,S1X is characterized for single-pulse avalanche energy (E_AS = 278 mJ), but Toshiba does not guarantee repetitive avalanche operation. For designs requiring repeated inductive energy absorption-such as motor freewheeling-external clamping or snubber circuits are recommended to avoid cumulative channel temperature rise beyond 175 °C.

What is the gate-source voltage limit for TK2R9E10PL,S1X?

The absolute maximum gate-source voltage for TK2R9E10PL,S1X is ±20 V. Exceeding this risks irreversible gate oxide damage. For reliable operation, gate drive should be clamped to +12 V to +15 V (for fast turn-on) and –5 V to 0 V (for robust turn-off), staying within the specified range while accounting for ringing margins.

Is TK2R9E10PL,S1X RoHS compliant and lead-free?

Yes, TK2R9E10PL,S1X is RoHS compliant and lead-free per Toshiba's environmental documentation. The device meets EU RoHS Directive 2011/65/EU requirements, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. Full compliance data is available in Toshiba's official product environmental reports.

TK2R9E10PL,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 161 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 306W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK2R9E10PL,S1X FAQ

1.How can I place an order for TK2R9E10PL,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK2R9E10PL,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK2R9E10PL,S1X reliable?

The price and inventory of TK2R9E10PL,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK2R9E10PL,S1X is usually 5 days.

3.What payment methods are accepted for TK2R9E10PL,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK2R9E10PL,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK2R9E10PL,S1X?

TK2R9E10PL,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK2R9E10PL,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK2R9E10PL,S1X?

For technical support, including TK2R9E10PL,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK2R9E10PL,S1X requirements.

6.How does Aetrix verify that TK2R9E10PL,S1X is sourced from the original manufacturer or authorized distributors?

All TK2R9E10PL,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK2R9E10PL,S1X meets industry standards.

7.What is the process for return or replacement of TK2R9E10PL,S1X?

All TK2R9E10PL,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK2R9E10PL,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK2R9E10PL,S1X part is unused and in its original packaging.

Return procedure for TK2R9E10PL,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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