Toshiba Semiconductor and Storage TK30E06N1,S1X

Overview

TK30E06N1,S1X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-efficiency switching element in DC-DC converters and motor drives. It delivers 43 A continuous drain current at T_c = 25°C, 60 V drain-source breakdown voltage, and typ. R_DS(ON) of 12.2 mΩ at V_GS = 10 V, enabling low conduction loss in high-current 48 V industrial power supplies.

For engineers reviewing the TK30E06N1,S1X datasheet, TK30E06N1,S1X pinout, TK30E06N1,S1X application, or TK30E06N1,S1X equivalent, key selection criteria include its TO-220 package thermal performance (R_th(ch-c) = 2.34°C/W), avalanche energy rating (E_AS = 38 mJ), and gate threshold range (2.0–4.0 V) for robust PWM control interface compatibility.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize on-resistance while maintaining fast switching characteristics. Its static parameters-V_(BR)DSS = 60 V, I_D = 43 A (DC), and R_DS(ON) ≤ 15.0 mΩ-are specified under strict channel temperature limits (T_ch ≤ 150°C).

Dynamic behavior is characterized by C_iss = 1050 pF, Q_g = 16 nC, and t_on/t_off = 21/28 ns at V_DD ≈ 48 V, supporting high-frequency synchronous rectification. The integrated body diode exhibits t_rr = 39 ns and Q_rr = 39 nC, suitable for hard-switched topologies with controlled reverse recovery.

Key Specifications

Pinout & Package

TK30E06N1,S1X is housed in a TO-220 package (TOSHIBA designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink mounting. Thermal resistance from channel to case is 2.34°C/W, requiring mechanical clamping and thermal interface material for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP40NF60 and IRFZ44NPBF, TK30E06N1,S1X offers superior R_DS(ON) × Q_g trade-off and certified avalanche ruggedness-critical for high-frequency, high-reliability industrial power stages where thermal headroom and transient immunity are design priorities.

Availability

TK30E06N1,S1X is available at Aetrix Electronics and suitable for switching voltage regulators, DC motor drives, uninterruptible power supplies, and LED constant-current drivers requiring stable component supply across multi-year production cycles.

Supply support for TK30E06N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET development expertise.

The TK30E06N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial switching applications demanding low R_DS(ON), fast switching, and robust avalanche performance.

FAQ

What is the maximum continuous drain current rating for TK30E06N1,S1X?

The TK30E06N1,S1X is rated for 43 A continuous drain current (I_D) at case temperature T_c = 25°C. This rating assumes proper heatsinking to maintain channel temperature ≤150°C. At elevated case temperatures, the current must be derated per the Safe Operating Area curve in the datasheet-e.g., ~25 A at T_c = 80°C. Always verify thermal design using R_th(ch-c) = 2.34°C/W and actual system airflow.

Does TK30E06N1,S1X support logic-level gate drive?

TK30E06N1,S1X is not a logic-level MOSFET. Its gate threshold voltage (V_th) ranges from 2.0 V to 4.0 V, and it achieves full enhancement (R_DS(ON) ≤ 15.0 mΩ) only at V_GS = 10 V. Driving it with 3.3 V or 5 V logic alone will result in high on-resistance and excessive heating. A dedicated gate driver capable of 10 V output with ≥1 A peak current is required for reliable operation of TK30E06N1,S1X.

What is the avalanche energy rating of TK30E06N1,S1X and how is it tested?

The TK30E06N1,S1X has a single-pulse avalanche energy rating (E_AS) of 38 mJ, measured under standardized conditions: V_DD = 48 V, T_ch = 25°C (initial), L = 32.8 µH, and I_AR = 30 A. This rating is verified per JEDEC JESD24-11 and guarantees safe operation during unclamped inductive switching events-such as those occurring in motor drive freewheeling or relay coil de-energization-without device failure.

Can TK30E06N1,S1X be used in parallel configurations?

Yes, TK30E06N1,S1X can be paralleled for higher current capacity, but requires careful attention to gate drive symmetry, source inductance matching, and thermal coupling. Its positive temperature coefficient of R_DS(ON) promotes current sharing above ~50°C, but layout imbalances can cause uneven stress. Use individual gate resistors (10–22 Ω), Kelvin source connections, and identical heatsink mounting pressure to ensure balanced operation of multiple TK30E06N1,S1X devices.

Is TK30E06N1,S1X RoHS compliant and halogen-free?

Yes, TK30E06N1,S1X is RoHS compliant and halogen-free per Toshiba's environmental specifications. The device meets EU Directive 2011/65/EU (RoHS 2) and contains no brominated flame retardants (BFRs), chlorinated flame retardants (CFRs), or antimony trioxide. Full compliance documentation-including test reports and declarations-is available through Toshiba's official environmental portal or upon request from Aetrix Electronics.