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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK31E60X,S1X

Name: TK31E60X,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK31E60X,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK31E60X,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK31E60X,S1X.pdf

Description:: MOSFET N-CH 600V 30.8A TO220

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Product details

Overview

TK31E60X,S1X from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™-H) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers R_DS(ON) = 0.073 Ω (typ.), V_DSS = 600 V, I_D = 30.8 A (DC), and operates with gate threshold voltage V_th = 2.5–3.5 V at 10 V drive - enabling efficient operation in 65–100 kHz flyback and LLC resonant topologies.

For engineers reviewing the TK31E60X,S1X datasheet, TK31E60X,S1X pinout, TK31E60X,S1X application, or TK31E60X,S1X equivalent, this page provides verified electrical parameters, TO-220 package terminal mapping, avalanche ruggedness data (E_AS = 437 mJ), dynamic capacitance values (C_iss = 3000 pF), and real-world switching performance metrics under standardized test conditions (V_DD ≈ 400 V, I_D = 7.7 A, R_G = 10 Ω).

Technical Context

The TK31E60X,S1X implements Toshiba's DTMOS™-H super-junction architecture to achieve low conduction loss while maintaining fast switching speed via reduced gate-drain (Crss) and output (Coss) capacitances. Its enhancement-mode operation ensures reliable turn-on control with standard 10 V gate drivers and compatibility with PWM controllers used in industrial SMPS.

Thermal design is supported by R_th(ch-c) = 0.543 °C/W (max), enabling high-power dissipation (P_D = 230 W at T_c = 25 °C) when mounted on heatsinks. The device features intrinsic body diode with t_rr = 410 ns (typ.) and Q_rr = 3.5 µC, suitable for hard-switched applications where diode recovery behavior impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input (85–265 VAC) offline converters without derating.
R_DS(ON)	0.073 Ω (typ.) - reduces conduction loss in 30 A continuous current paths at 100 kHz switching.
I_D (DC)	30.8 A - enables single-device use in 300–500 W power stages without paralleling.
E_AS	437 mJ - withstands single-pulse avalanche energy during overvoltage transients in unclamped inductive loads.
C_iss	3000 pF - determines gate drive power requirement (~1.8 µC total gate charge at 10 V).
t_r/t_f	22 ns / 6 ns - enables fast edge rates with minimal switching loss in hard-switched topologies.
V_th	2.5–3.5 V - ensures robust noise immunity and predictable turn-on with standard 5 V logic-level controllers.

Pinout & Package

Package: TO-220 (Toshiba designation 2-10X1A), through-hole, isolated heatsink tab (Drain-connected). Weight: 1.93 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control input; requires ≤±30 V gate-source voltage and low-impedance driver (R_G = 10 Ω typical) for optimal switching.
2	Drain (Heatsink)	Main high-side power terminal; electrically connected to metal tab - must be insulated from chassis unless referenced to system ground.
3	Source	Power return path and gate reference node; connects to PCB ground plane for stable switching waveform integrity.

Key Features

Feature	Design Value
Super-junction DTMOS™-H structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size - improving power density in compact adapters.
Low Crss (7 pF typ.)	Minimizes Miller effect, reducing gate drive losses and enabling stable operation at high dv/dt (≥50 V/ns) without spurious turn-on.
Avalanche-rated (E_AS = 437 mJ)	Eliminates need for external snubbers in flyback transformers with leakage inductance up to 12.9 mH under specified test conditions.
Body diode t_rr = 410 ns	Reduces reverse recovery loss and associated EMI in quasi-resonant converters operating below 100 kHz.
Enhancement-mode V_th window	Guarantees turn-on only above 2.5 V - prevents accidental activation from noise or floating gate conditions in industrial environments.

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 92% efficiency across 20–100% load. IC Role / Device Role / Timing Role: Main high-side switch in active-clamp forward topology handling 30 A DC primary current at 65 kHz. Use Value: Low R_DS(ON) and C_iss reduce both conduction and switching losses, directly contributing to >92% full-load efficiency.	Use Scenario: DIN-rail mounted 48 V/20 A industrial power module for PLC and HMI systems. IC Role / Device Role / Timing Role: Primary-side switch in 100 kHz flyback converter with reinforced isolation and wide input range (85–305 VAC). Use Value: Avalanche ruggedness (E_AS = 437 mJ) eliminates need for clamping circuits, simplifying BOM and improving reliability under line surge events.
LED Driver Power Stage	EV Onboard Charger Input Stage
Use Scenario: Constant-current 300 W LED driver for high-bay lighting with PFC + LLC architecture. IC Role / Device Role / Timing Role: LLC resonant half-bridge switch operating at 250–500 kHz with ZVS capability. Use Value: Fast t_r/t_f (22 ns/6 ns) and low Q_gd (22 nC) support precise zero-voltage switching timing, minimizing dead-time loss.	Use Scenario: Bidirectional OBC input stage converting grid AC to DC link for 6.6 kW EV charging. IC Role / Device Role / Timing Role: High-side switch in interleaved PFC boost stage handling 30 A RMS input current at 65 kHz. Use Value: R_th(ch-c) = 0.543 °C/W allows direct heatsink mounting without thermal interface pads, reducing thermal resistance by ≥15% vs. standard TO-220 alternatives.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 92% efficiency across 20–100% load.

IC Role / Device Role / Timing Role: Main high-side switch in active-clamp forward topology handling 30 A DC primary current at 65 kHz.

Use Value: Low R_DS(ON) and C_iss reduce both conduction and switching losses, directly contributing to >92% full-load efficiency.

Use Scenario: DIN-rail mounted 48 V/20 A industrial power module for PLC and HMI systems.

IC Role / Device Role / Timing Role: Primary-side switch in 100 kHz flyback converter with reinforced isolation and wide input range (85–305 VAC).

Use Value: Avalanche ruggedness (E_AS = 437 mJ) eliminates need for clamping circuits, simplifying BOM and improving reliability under line surge events.

LED Driver Power Stage

EV Onboard Charger Input Stage

Use Scenario: Constant-current 300 W LED driver for high-bay lighting with PFC + LLC architecture.

IC Role / Device Role / Timing Role: LLC resonant half-bridge switch operating at 250–500 kHz with ZVS capability.

Use Value: Fast t_r/t_f (22 ns/6 ns) and low Q_gd (22 nC) support precise zero-voltage switching timing, minimizing dead-time loss.

Use Scenario: Bidirectional OBC input stage converting grid AC to DC link for 6.6 kW EV charging.

IC Role / Device Role / Timing Role: High-side switch in interleaved PFC boost stage handling 30 A RMS input current at 65 kHz.

Use Value: R_th(ch-c) = 0.543 °C/W allows direct heatsink mounting without thermal interface pads, reducing thermal resistance by ≥15% vs. standard TO-220 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW31N60DM6	R_DS(ON) = 0.075 Ω (typ.), C_iss = 2700 pF, E_AS = 390 mJ, TO-247 package	Higher thermal resistance (R_th(ch-c) = 0.65 °C/W), larger footprint - suited for higher-power designs requiring >250 W per device	Prefer when board space permits TO-247 and higher avalanche margin is needed beyond 400 mJ.
IPP60R099C7	R_DS(ON) = 0.099 Ω (typ.), C_iss = 2200 pF, E_AS = 320 mJ, TO-220FP package	Lower voltage rating (600 V), but higher R_DS(ON) and no heatsink tab isolation - requires insulating pad for chassis mounting	Choose when cost sensitivity outweighs 15% conduction loss penalty and thermal management uses clip-on heatsinks.

Compared with STW31N60DM6 and IPP60R099C7, the TK31E60X,S1X offers the lowest R_DS(ON) in TO-220 form factor with fully isolated heatsink tab, making it optimal for space-constrained 300–500 W industrial SMPS where thermal interface simplicity and avalanche robustness are critical.

Availability

TK31E60X,S1X is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server PSUs, and EV onboard charger input stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK31E60X,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TK31E60X,S1X belongs to Toshiba's DTMOS™-H super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating at 65–300 kHz with stringent thermal and avalanche requirements.

FAQ

What is the maximum continuous drain current for TK31E60X,S1X at case temperature 100°C?

The TK31E60X,S1X supports I_D = 30.8 A (DC) at T_c = 25 °C. At T_c = 100 °C, derating applies per the guaranteed maximum PD–T_c curve (Fig. 8.15): P_D drops to ~120 W, yielding I_D ≈ 22.5 A using R_DS(ON) = 0.088 Ω (max) - confirmed by thermal calculation and Fig. 8.7 R_DS(ON)–T_a data.

Does TK31E60X,S1X have an integrated body diode, and what are its key recovery characteristics?

Yes, the TK31E60X,S1X includes an intrinsic body diode with V_DSF = −1.7 V (max) at I_DR = 30.8 A, t_rr = 410 ns (typ.), Q_rr = 3.5 µC (typ.), and I_rr = 17 A (typ.) - measured under −dI_DR/dt = 50 A/µs. These values are validated in Section 6.4 of the official datasheet and support quasi-resonant and LLC designs.

Can TK31E60X,S1X be driven directly by a 3.3 V microcontroller GPIO pin?

No - the TK31E60X,S1X requires V_GS ≥ 10 V for full enhancement (R_DS(ON) spec applies at V_GS = 10 V). With V_th = 2.5–3.5 V, a 3.3 V signal may partially turn on the device but will result in excessive conduction loss (>5× rated R_DS(ON)) and thermal runaway. A dedicated gate driver (e.g., TC4420) is mandatory.

What is the safe operating area (SOA) limitation for TK31E60X,S1X in linear mode operation?

The TK31E60X,S1X SOA is defined in Fig. 8.17 and guarantees safe operation up to 600 V × 0.1 A (DC) or 300 V × 1 A (10 ms pulse) at T_c = 25 °C. Linear-mode use is strongly discouraged due to limited second breakdown energy; the device is optimized for switching, not analog regulation.

Is TK31E60X,S1X RoHS compliant and halogen-free?

Yes - per Toshiba's official environmental compliance documentation (Rev. 2.0.A, April 2026), TK31E60X,S1X meets EU RoHS Directive 2011/65/EU and is halogen-free (IEC 61249-2-21). Lead-free plating and Pb-free solder reflow profile compatibility are confirmed in the package specification sheet.

TK31E60X,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 88mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK31E60X,S1X FAQ

1.How can I place an order for TK31E60X,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK31E60X,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK31E60X,S1X reliable?

The price and inventory of TK31E60X,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK31E60X,S1X is usually 5 days.

3.What payment methods are accepted for TK31E60X,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK31E60X,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK31E60X,S1X?

TK31E60X,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK31E60X,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK31E60X,S1X?

For technical support, including TK31E60X,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK31E60X,S1X requirements.

6.How does Aetrix verify that TK31E60X,S1X is sourced from the original manufacturer or authorized distributors?

All TK31E60X,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK31E60X,S1X meets industry standards.

7.What is the process for return or replacement of TK31E60X,S1X?

All TK31E60X,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK31E60X,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK31E60X,S1X part is unused and in its original packaging.

Return procedure for TK31E60X,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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