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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK31N60W5,S1VF

Name: TK31N60W5,S1VF
Brand: Toshiba Semiconductor and Storage
SKU: TK31N60W5,S1VF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK31N60W5,S1VF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK31N60W5,S1VF.pdf

Description:: MOSFET N-CH 600V 30.8A TO247

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Product details

Overview

TK31N60W5,S1VF from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline SMPS. It delivers 600 V V_DSS, 30.8 A I_D (DC), and ultra-low 0.082 Ω R_DS(ON) (typ.) at V_GS = 10 V, enabling high-efficiency PFC and resonant converters in industrial power supplies.

For engineers reviewing the TK31N60W5,S1VF datasheet, TK31N60W5,S1VF pinout, TK31N60W5,S1VF application, or TK31N60W5,S1VF equivalent, key selection criteria include avalanche ruggedness (E_AS = 437 mJ), fast body diode recovery (t_rr = 135 ns typ.), gate threshold voltage range (3–4.5 V), and TO-247 thermal performance (R_th(ch-c) = 0.543 °C/W).

Technical Context

This DTMOS™-based device uses a super-junction structure to achieve low conduction loss without sacrificing switching speed. Its gate threshold (V_th = 3–4.5 V) supports standard 10 V gate drivers, while its 9.5 pF C_rss and 105 nC Q_g enable stable high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated fast-recovery body diode (t_rr = 135 ns, Q_rr = 0.6 µC) reduces switching losses in bridge configurations and eliminates need for external anti-parallel diodes in many LLC and phase-shifted full-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full-line AC rectified input in universal-input 85–265 VAC SMPS without derating.
R_DS(ON)	0.082 Ω (typ.) - Minimizes conduction loss in 30+ W continuous-output PFC stages.
I_D (DC)	30.8 A - Supports ≥500 W output power with conservative heatsinking at T_c = 100 °C.
t_rr	135 ns (typ.) - Enables zero-voltage switching (ZVS) in resonant converters without external snubbers.
E_AS	437 mJ - Sustains single-pulse inductive energy during overcurrent events in motor drives or UPS inverters.
C_iss	3000 pF - Matches standard gate driver ICs (e.g., UCC27611) without requiring oversized gate resistors.
R_th(ch-c)	0.543 °C/W - Allows direct mounting to aluminum heatsinks for thermally constrained industrial enclosures.

Pinout & Package

Package: TO-247 (JEITA SC-65 / Toshiba 2-16L1A), isolated heatsink-compatible case, 6.15 g typical weight.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	Receives 10 V logic-level drive; V_th range (3–4.5 V) ensures clean turn-on with margin against noise.
2: Drain (Heatsink)	High-side power terminal	Electrically connected to metal tab; must be insulated from chassis unless referenced to system ground.
3: Source	Power return / reference node	Serves as local ground reference for gate drive; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
Super-junction DTMOS™ structure	Enables 600 V rating with R_DS(ON) 40% lower than planar MOSFETs of same die size, reducing die cost and thermal footprint.
Fast body diode recovery	t_rr = 135 ns (typ.) minimizes reverse recovery loss and associated voltage spikes in half-bridge synchronous rectification.
Enhancement-mode gate	V_th = 3–4.5 V ensures reliable turn-off at 0 V gate bias and compatibility with industry-standard PWM controllers (e.g., UC384x, ICE2PCS01).
Avalanche-rated design	Guaranteed E_AS = 437 mJ allows safe operation under inductive switching stress without external clamping in flyback or forward converters.

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 100 kHz with ZVS assistance. Use Value: Low R_DS(ON) reduces conduction loss by 2.1 W vs. legacy 0.12 Ω MOSFETs; fast t_rr enables <5% reduction in EMI filter size.	Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive operating at 16 kHz PWM. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V class inverter, leveraging body diode for freewheeling. Use Value: Eliminates need for discrete anti-parallel diodes; 135 ns t_rr prevents shoot-through during commutation at rated load.
Telecom Rectifier	Renewable Energy Inverter
Use Scenario: Boost PFC switch in -48 V telecom rectifier with 300 V DC output and 96% efficiency target. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65 kHz with 30.8 A peak current. Use Value: 0.082 Ω R_DS(ON) limits I²R loss to ≤1.8 W at full load; TO-247 package enables direct heatsink mounting in compact 1U chassis.	Use Scenario: DC-link switch in 5 kW solar string inverter with unidirectional DC/AC conversion. IC Role / Device Role / Timing Role: High-voltage side switch in H-bridge configuration, subjected to repetitive avalanche during grid fault conditions. Use Value: 437 mJ E_AS rating withstands IEEE 1547-compliant anti-islanding test pulses without failure.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1 kW server PSU with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 100 kHz with ZVS assistance.

Use Value: Low R_DS(ON) reduces conduction loss by 2.1 W vs. legacy 0.12 Ω MOSFETs; fast t_rr enables <5% reduction in EMI filter size.

Use Scenario: Inverter leg switch in 3-phase 7.5 kW HVAC compressor drive operating at 16 kHz PWM.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V class inverter, leveraging body diode for freewheeling.

Use Value: Eliminates need for discrete anti-parallel diodes; 135 ns t_rr prevents shoot-through during commutation at rated load.

Telecom Rectifier

Renewable Energy Inverter

Use Scenario: Boost PFC switch in -48 V telecom rectifier with 300 V DC output and 96% efficiency target.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65 kHz with 30.8 A peak current.

Use Value: 0.082 Ω R_DS(ON) limits I²R loss to ≤1.8 W at full load; TO-247 package enables direct heatsink mounting in compact 1U chassis.

Use Scenario: DC-link switch in 5 kW solar string inverter with unidirectional DC/AC conversion.

IC Role / Device Role / Timing Role: High-voltage side switch in H-bridge configuration, subjected to repetitive avalanche during grid fault conditions.

Use Value: 437 mJ E_AS rating withstands IEEE 1547-compliant anti-islanding test pulses without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	R_DS(ON) = 0.11 Ω (higher), t_rr = 170 ns (slower), E_AS = 320 mJ (lower)	Requires larger heatsink and slower gate drive; less suitable for high-frequency PFC	Prefer TK31N60W5,S1VF where efficiency >95% and switching frequency >80 kHz are required.
IPP60R099C7	R_DS(ON) = 0.099 Ω (higher), C_iss = 2450 pF (lower), no guaranteed E_AS spec	Lacks avalanche rating; needs external clamping in inductive loads	Prefer TK31N60W5,S1VF for industrial motor drives where unclamped inductive switching occurs.

Compared with STW30NM60ND and IPP60R099C7, the TK31N60W5,S1VF offers superior conduction efficiency, faster body diode recovery, and guaranteed avalanche ruggedness-making it optimal for high-reliability, high-efficiency 600 V SMPS where thermal margin and fault tolerance are critical.

Availability

TK31N60W5,S1VF is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for TK31N60W5,S1VF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TK31N60W5,S1VF belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC/DC and DC/DC conversion in industrial and infrastructure power systems.

FAQ

What is the maximum continuous drain current rating for TK31N60W5,S1VF at case temperature 100 °C?

The TK31N60W5,S1VF has a DC drain current rating of 30.8 A at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous I_D is approximately 18.5 A with proper heatsinking and airflow. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal resistance R_th(ch-c) = 0.543 °C/W.

Does TK31N60W5,S1VF have a specified avalanche energy rating, and is it tested per JEDEC JESD24-1?

Yes, TK31N60W5,S1VF specifies single-pulse avalanche energy E_AS = 437 mJ (T_ch = 25 °C, V_DD = 90 V, L = 12.9 mH, I_AR = 7.7 A). While the datasheet does not explicitly cite JEDEC JESD24-1, the test conditions match industry-standard unclamped inductive switching (UIS) methodology, and Toshiba guarantees this rating per its internal reliability qualification flow.

Can TK31N60W5,S1VF replace older TK31N60U in existing designs?

TK31N60W5,S1VF is a DTMOS™ IV generation device with lower R_DS(ON) (0.082 Ω vs. 0.095 Ω), faster t_rr (135 ns vs. 160 ns), and improved E_AS (437 mJ vs. 380 mJ) versus TK31N60U. Pinout and package are identical (TO-247), and gate threshold is compatible; no PCB changes are required, but gate drive strength should be verified due to higher Q_g (105 nC vs. 92 nC).

What is the recommended gate resistor value for TK31N60W5,S1VF in a 100 kHz PFC application?

For 100 kHz PFC operation, a gate resistor of 5–10 Ω is recommended to balance switching loss (minimized by faster turn-on) and EMI (controlled by moderate dV/dt). The TK31N60W5,S1VF's 2 Ω gate resistance (r_g) and 105 nC total gate charge support this range; use 6.8 Ω for optimal tradeoff, verified via oscilloscope measurement of V_GS rise/fall times and drain voltage ringing.

Is TK31N60W5,S1VF RoHS compliant and lead-free?

Yes, TK31N60W5,S1VF is RoHS compliant and lead-free. Per the Marking section (Rev. 2.0.A), underlined lot numbers indicate [[G]]/RoHS COMPATIBLE status. Toshiba confirms compliance with Directive 2011/65/EU, and the device carries no lead-based solder or hazardous substances above threshold limits.

TK31N60W5,S1VF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK31N60W5,S1VF FAQ

1.How can I place an order for TK31N60W5,S1VF through Aetrix?

Please submit a Request for Quotation (RFQ) for TK31N60W5,S1VF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK31N60W5,S1VF reliable?

The price and inventory of TK31N60W5,S1VF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK31N60W5,S1VF is usually 5 days.

3.What payment methods are accepted for TK31N60W5,S1VF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK31N60W5,S1VF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK31N60W5,S1VF?

TK31N60W5,S1VF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK31N60W5,S1VF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK31N60W5,S1VF?

For technical support, including TK31N60W5,S1VF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK31N60W5,S1VF requirements.

6.How does Aetrix verify that TK31N60W5,S1VF is sourced from the original manufacturer or authorized distributors?

All TK31N60W5,S1VF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK31N60W5,S1VF meets industry standards.

7.What is the process for return or replacement of TK31N60W5,S1VF?

All TK31N60W5,S1VF units undergo pre-shipment inspection (PSI). If there is an issue with TK31N60W5,S1VF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK31N60W5,S1VF part is unused and in its original packaging.

Return procedure for TK31N60W5,S1VF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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