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Toshiba Semiconductor and Storage TK31N60W,S1VF
- Part No.:
- TK31N60W,S1VF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
TK31N60W,S1VF.pdf
- Description:
- MOSFET N CH 600V 30.8A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:7,400
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Product details
Overview
TK31N60W,S1VF from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and industrial SMPS. It delivers 600 V VDSS, 30.8 A continuous drain current (TC = 25 °C), and ultra-low RDS(ON) of 0.073 Ω (typ.) at VGS = 10 V, enabling high-efficiency operation in PFC and main-switch stages.
For engineers reviewing the TK31N60W,S1VF datasheet, TK31N60W,S1VF pinout, TK31N60W,S1VF application, or TK31N60W,S1VF equivalent, this page provides verified electrical specs, thermal behavior, gate charge characteristics, avalanche ruggedness (EAS = 437 mJ), and TO-247 package implementation guidance - all critical for reliable high-power converter design.
Technical Context
This device uses Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its enhancement-mode threshold (Vth = 2.7–3.7 V) ensures clean turn-on with standard 10 V gate drivers, while its 9.5 pF Crss and 32 ns rise time support efficient hard-switching up to 100 kHz.
The integrated body diode exhibits 410 ns reverse recovery time (trr) and 3.5 µC Qrr under 15.4 A conditions, making it suitable for quasi-resonant and LLC topologies where diode recovery stress must be minimized. Channel-to-case thermal resistance is tightly specified at 0.543 °C/W, enabling direct heatsink mounting for high-power density designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands full rectified 400 VAC line surges with margin for transient overvoltage in offline SMPS. |
| RDS(ON) | 0.073 Ω (typ.) at VGS = 10 V - Reduces conduction loss to <2.3 W at 30.8 A, critical for >90% efficiency targets. |
| ID (DC) | 30.8 A at TC = 25 °C - Supports ≥500 W continuous output in well-heatsinked 200–300 W/in³ power supplies. |
| EAS | 437 mJ - Enables robust single-pulse avalanche capability during startup or overload without external snubbers. |
| Qg | 86 nC - Optimized for 10–15 V gate drive; enables <1 µs total switching time with 10 Ω gate resistor. |
| trr | 410 ns - Limits diode recovery loss and EMI generation in bridge-leg configurations with fast dI/dt. |
| Rth(ch-c) | 0.543 °C/W - Allows direct mounting to aluminum heatsinks; supports 230 W dissipation at ΔT = 125 °C. |
Pinout & Package
TK31N60W,S1VF is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated metal tab for direct heatsink attachment. The case serves as the Drain terminal, enabling low-inductance high-current paths and simplified thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | High-impedance control input; requires ≤25 Ω series gate resistor to damp oscillation and limit peak IG. |
| 2 | Drain (Heatsink) | Main high-voltage power terminal; electrically connected to metal tab - must be insulated from chassis unless referenced to primary ground. |
| 3 | Source | Power return path and gate reference; forms common node with driver IC ground in low-side switch configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Super-junction DTMOS™ IV structure | Enables 600 V rating with RDS(ON) 30% lower than planar MOSFETs of same die size - improves power density. |
| Low Crss (9.5 pF) | Reduces Miller-induced shoot-through risk and gate drive power loss - supports stable operation at 100+ kHz. |
| Guaranteed avalanche energy (EAS) | 437 mJ rating allows safe operation under inductive switching stress without derating - eliminates need for external clamping in many designs. |
| Enhancement-mode Vth | 2.7–3.7 V range ensures reliable turn-off at 0 V gate bias and clean turn-on with standard PWM controllers. |
| RoHS-compliant marking | Underlined Lot No. indicates [[G]]/RoHS COMPATIBLE version - meets EU Directive 2011/65/EU requirements. |
Applications
| Server PSU Primary Switch | Industrial Motor Drive Inverter |
|---|---|
Use Scenario: High-efficiency 1 kW+ server power supply operating at 50–100 kHz with active PFC and LLC resonant conversion. IC Role / Device Role / Timing Role: Main switch in LLC half-bridge primary side, handling 30.8 A peak current at 400 V DC bus. Use Value: Low RDS(ON) and optimized Qg/Crss reduce total losses by ~1.8 W vs. legacy 600 V MOSFETs, improving thermal margin at 50°C ambient. |
Use Scenario: 3-phase 7.5 kW VFD driving induction motors in factory automation systems with regenerative braking. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V inverter leg, switching at 8–16 kHz with 15.4 A RMS phase current. Use Value: Fast trr and low Qrr minimize diode commutation loss during PWM dead-time, reducing heatsink size by 25%. |
| Telecom Rectifier Module | EV Onboard Charger PFC Stage |
Use Scenario: -48 V telecom rectifier with universal AC input (90–264 VAC) and 3 kW output using interleaved boost PFC. IC Role / Device Role / Timing Role: Boost switch in 100 kHz interleaved PFC stage, conducting 30.8 A DC with 100 kHz ripple. Use Value: 0.543 °C/W Rth(ch-c) enables direct heatsink mounting without thermal interface pads - simplifies mechanical layout and improves long-term reliability. |
Use Scenario: Bidirectional OBC with dual active bridge topology, requiring 600 V switches capable of synchronous rectification and reverse conduction. IC Role / Device Role / Timing Role: High-side switch in 3.3 kW PFC front-end, operating in continuous conduction mode with 15.4 A average current. Use Value: Guaranteed EAS of 437 mJ withstands line transients during grid synchronization - avoids catastrophic failure during voltage dips or surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW30N60M2 | RDS(ON) = 0.075 Ω (typ.), higher Qg = 95 nC, TO-247 package, no guaranteed EAS spec. | Lacks specified avalanche ruggedness - requires external clamping in high-inductance circuits. | Acceptable where layout minimizes stray inductance and surge testing is not required. |
| IPP60R099C7 | RDS(ON) = 0.099 Ω (typ.), lower VDSS = 650 V, Co(er) = 110 pF, higher Crss = 15 pF. | Higher switching loss due to larger Crss and Qg; less suitable for >75 kHz operation. | Better fit for cost-sensitive 650 V designs where conduction loss dominates and frequency is ≤50 kHz. |
Compared with STW30N60M2 and IPP60R099C7, TK31N60W,S1VF offers superior avalanche ruggedness and lower Crss for cleaner high-frequency switching - making it preferred for compact, high-reliability offline converters where transient immunity and EMI control are critical.
Availability
TK31N60W,S1VF is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for TK31N60W,S1VF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-voltage MOSFET technology.
The TK31N60W,S1VF belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial, telecom, and computing power systems.
FAQ
What is the maximum continuous drain current for TK31N60W,S1VF at 100°C case temperature?
The TK31N60W,S1VF datasheet specifies ID = 30.8 A at TC = 25 °C. At TC = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the maximum continuous current drops to approximately 18.5 A to maintain channel temperature ≤150 °C. This value is confirmed by the thermal resistance Rth(ch-c) = 0.543 °C/W and absolute max Tch = 150 °C.
Does TK31N60W,S1VF have a fully rated avalanche capability, and what is the test condition?
Yes, TK31N60W,S1VF has a guaranteed single-pulse avalanche energy rating of EAS = 437 mJ. The test condition is VDD = 90 V, Tch = 25 °C (initial), L = 12.9 mH, RG = 25 Ω, and IAR = 7.7 A, as defined in Note 2 of the Absolute Maximum Ratings table. This is a production-tested specification, not a typical-only value.
Can TK31N60W,S1VF be used as a direct replacement for older TK31N60U or TK31N60D variants?
No - TK31N60W,S1VF is part of the DTMOS™ IV generation and features improved RDS(ON), lower Crss, and enhanced avalanche rating versus TK31N60U (DTMOS II) and TK31N60D (DTMOS III). Pinout is identical (TO-247, G-D-S), but gate charge and dynamic characteristics differ; layout reuse is possible, but gate drive tuning and SOA validation are required before substitution.
What is the gate threshold voltage range for TK31N60W,S1VF, and how does it affect drive compatibility?
The gate threshold voltage Vth for TK31N60W,S1VF is 2.7–3.7 V (measured at VDS = 10 V, ID = 1.5 mA). This range ensures reliable turn-off with 0 V gate bias and clean turn-on with industry-standard 10–15 V gate drivers (e.g., UCC27xx, IRS21xx), eliminating need for negative bias or level-shifting in most low-side configurations.
Is TK31N60W,S1VF RoHS compliant, and how is compliance indicated on the device marking?
Yes, TK31N60W,S1VF is RoHS compliant. Per the marking note in the datasheet, an underlined Lot No. on the device body indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]. Non-underlined markings denote lead-containing versions. Compliance aligns with EU Directive 2011/65/EU, and environmental data is available through Toshiba sales representatives.
TK31N60W,S1VF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 30.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 88mOhm @ 15.4A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs:
- 86 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
TK31N60W,S1VF FAQ
1.How can I place an order for TK31N60W,S1VF through Aetrix?
Please submit a Request for Quotation (RFQ) for TK31N60W,S1VF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK31N60W,S1VF reliable?
The price and inventory of TK31N60W,S1VF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK31N60W,S1VF is usually 5 days.
3.What payment methods are accepted for TK31N60W,S1VF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK31N60W,S1VF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK31N60W,S1VF?
TK31N60W,S1VF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK31N60W,S1VF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK31N60W,S1VF?
For technical support, including TK31N60W,S1VF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK31N60W,S1VF requirements.
6.How does Aetrix verify that TK31N60W,S1VF is sourced from the original manufacturer or authorized distributors?
All TK31N60W,S1VF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK31N60W,S1VF meets industry standards.
7.What is the process for return or replacement of TK31N60W,S1VF?
All TK31N60W,S1VF units undergo pre-shipment inspection (PSI). If there is an issue with TK31N60W,S1VF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK31N60W,S1VF part is unused and in its original packaging.
Return procedure for TK31N60W,S1VF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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