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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK31N60X,S1F

Name: TK31N60X,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK31N60X,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK31N60X,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK31N60X,S1F.pdf

Description:: MOSFET N-CH 600V 30.8A TO247

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Product details

Overview

TK31N60X,S1F from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 600 V V_DSS, 30.8 A continuous drain current, and ultra-low R_DS(ON) of 0.073 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK31N60X,S1F datasheet, TK31N60X,S1F pinout, TK31N60X,S1F application, or TK31N60X,S1F equivalent, this device supports fast switching with C_iss = 3000 pF, Q_g = 65 nC, and avalanche-rated ruggedness (E_AS = 437 mJ), making it suitable for hard-switched PFC and resonant LLC topologies requiring robust voltage transients handling.

Technical Context

The TK31N60X,S1F employs Toshiba's DTMOS™-H super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its gate threshold voltage (2.5–3.5 V) ensures reliable enhancement-mode turn-on with standard 10 V gate drivers, while its low Crss (7 pF) minimizes Miller-induced shoot-through risk in half-bridge configurations.

Thermal performance is optimized for TO-247 mounting: R_th(ch-c) = 0.543 °C/W enables high-power dissipation up to 230 W at T_c = 25 °C, and the integrated body diode exhibits t_rr = 410 ns and Q_rr = 3.5 µC - critical for ZVS-capable converters and synchronous rectification replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input (85–265 VAC) offline converters with ≥2× safety margin against line surges.
R_DS(ON)	0.073 Ω (typ.) - reduces conduction loss in high-current PFC stages, improving full-load efficiency by ~0.5–1.2% vs. older 0.12 Ω devices.
I_D (DC)	30.8 A - enables single-device use in 300–500 W SMPS without paralleling, simplifying thermal layout.
Q_g	65 nC - balances gate drive loss and switching speed; compatible with common 1–2 A peak gate drivers (e.g., UCC2732x).
E_AS	437 mJ - withstands single-pulse avalanche events during startup or overload, eliminating need for external clamping in many designs.
t_r/t_f	22 ns / 6 ns - supports >100 kHz switching in hard-switched topologies while maintaining low EMI due to controlled dv/dt (≥50 V/ns).
T_ch max	150 °C - allows operation in sealed enclosures or high-ambient environments when heatsinked per R_th(ch-c) spec.

Pinout & Package

TK31N60X,S1F is housed in a TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated tab (Drain-connected heatsink). The case design supports mechanical mounting torque up to 0.8 N·m and provides 6.15 g mass for stable thermal inertia.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives voltage-controlled signal; requires <1 µA leakage (I_GSS) and 2.5–3.5 V V_th for reliable turn-on with minimal drive power.
2: Drain (Heatsink)	High-voltage power terminal	Electrically connected to metal tab; must be insulated from chassis unless referenced to system ground; carries full load current and avalanche energy.
3: Source	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential to avoid false triggering from dV/dt coupling.

Key Features

Feature	Design Value
DTMOS™-H Super-Junction Structure	Enables 0.073 Ω R_DS(ON) at 600 V - 35% lower on-resistance than conventional planar MOSFETs, directly reducing I²R losses in high-current paths.
Low Crss (7 pF)	Minimizes Miller plateau duration and gate drive dependency on load current, improving stability in phase-shifted full-bridge and LLC resonant controllers.
Body Diode t_rr = 410 ns	Reduces reverse recovery loss and associated EMI in flyback and active-clamp forward converters operating above 65 kHz.
Avalanche Rated (E_AS = 437 mJ)	Eliminates need for external RCD snubbers in cost-sensitive consumer power supplies, lowering BOM count and board area.
RoHS Compliant Marking	[[G]]/RoHS [[Pb]] marking confirms lead-free termination and compliance with EU Directive 2011/65/EU - required for CE-marked end equipment.

Applications

Server PSU	Industrial SMPS
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server power supplies using interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-side switch in boost PFC stage; handles 10–15 A RMS current at 100 kHz with zero-voltage switching assist. Use Value: Low R_DS(ON) and Q_g reduce conduction and switching losses simultaneously, enabling >96% efficiency at 50% load without liquid cooling.	Use Scenario: Main DC-DC converter in programmable logic controller (PLC) power modules requiring wide input range (90–305 VAC) and long service life. IC Role / Device Role / Timing Role: Primary switch in asymmetrical half-bridge configuration; operates at 75 kHz with 40% duty cycle under full load. Use Value: Avalanche rating and 150 °C channel temperature limit ensure reliability over 10-year field deployment in unventilated control cabinets.
LED Streetlight Driver	EV Charger Auxiliary Supply
Use Scenario: Constant-current output stage in outdoor LED streetlight drivers exposed to lightning-induced surges and ambient temperatures from −40 °C to +85 °C. IC Role / Device Role / Timing Role: Switching element in flyback regulator powering LED strings; subjected to repetitive 6 kV surge pulses per IEC 61000-4-5. Use Value: 437 mJ single-pulse avalanche energy absorbs surge energy without failure, avoiding costly TVS diodes and extending MTBF beyond 50,000 hours.	Use Scenario: Isolated auxiliary power supply (12 V/2 A) inside 22 kW AC EV charging station, powering MCU, CAN transceiver, and relay drivers. IC Role / Device Role / Timing Role: Primary-side MOSFET in 300 kHz quasi-resonant flyback; operates continuously at 60 °C ambient with 20 K thermal margin. Use Value: R_th(ch-c) = 0.543 °C/W allows direct bolt-down heatsinking to metal enclosure, eliminating dedicated fan and reducing system noise and failure points.

Server PSU

Industrial SMPS

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server power supplies using interleaved PFC + LLC topology.

IC Role / Device Role / Timing Role: High-side switch in boost PFC stage; handles 10–15 A RMS current at 100 kHz with zero-voltage switching assist.

Use Value: Low R_DS(ON) and Q_g reduce conduction and switching losses simultaneously, enabling >96% efficiency at 50% load without liquid cooling.

Use Scenario: Main DC-DC converter in programmable logic controller (PLC) power modules requiring wide input range (90–305 VAC) and long service life.

IC Role / Device Role / Timing Role: Primary switch in asymmetrical half-bridge configuration; operates at 75 kHz with 40% duty cycle under full load.

Use Value: Avalanche rating and 150 °C channel temperature limit ensure reliability over 10-year field deployment in unventilated control cabinets.

LED Streetlight Driver

EV Charger Auxiliary Supply

Use Scenario: Constant-current output stage in outdoor LED streetlight drivers exposed to lightning-induced surges and ambient temperatures from −40 °C to +85 °C.

IC Role / Device Role / Timing Role: Switching element in flyback regulator powering LED strings; subjected to repetitive 6 kV surge pulses per IEC 61000-4-5.

Use Value: 437 mJ single-pulse avalanche energy absorbs surge energy without failure, avoiding costly TVS diodes and extending MTBF beyond 50,000 hours.

Use Scenario: Isolated auxiliary power supply (12 V/2 A) inside 22 kW AC EV charging station, powering MCU, CAN transceiver, and relay drivers.

IC Role / Device Role / Timing Role: Primary-side MOSFET in 300 kHz quasi-resonant flyback; operates continuously at 60 °C ambient with 20 K thermal margin.

Use Value: R_th(ch-c) = 0.543 °C/W allows direct bolt-down heatsinking to metal enclosure, eliminating dedicated fan and reducing system noise and failure points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW31N60DM2	600 V, 31 A, R_DS(ON) = 0.075 Ω, Q_g = 62 nC, but no guaranteed E_AS rating - only qualified per JEDEC JESD22-A115.	Lacks specified avalanche ruggedness; requires external clamping in non-ZVS designs where voltage overshoot exceeds 650 V.	Prefer TK31N60X,S1F when operating in hard-switched PFC or surge-prone environments; STW31N60DM2 suits cost-optimized ZVS-only applications.
IPP60R099C7	600 V, 35 A, R_DS(ON) = 0.099 Ω, Q_g = 55 nC, uses CoolMOS™ P7 process with lower Crss (5 pF) but higher on-resistance.	Higher conduction loss increases thermal stress at >25 A DC; better suited for high-frequency (>200 kHz) resonant topologies than hard-switched PFC.	Select TK31N60X,S1F for highest efficiency below 150 kHz; choose IPP60R099C7 only if gate drive capability is limited to <1.5 A peak and frequency exceeds 180 kHz.

Compared with STW31N60DM2 and IPP60R099C7, the TK31N60X,S1F offers superior avalanche ruggedness and lowest R_DS(ON) in its class - making it optimal for industrial and infrastructure power supplies where reliability under transient stress is non-negotiable.

Availability

TK31N60X,S1F is available at Aetrix Electronics and suitable for server PSUs, industrial SMPS, LED streetlight drivers, and EV charger auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for TK31N60X,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power MOSFET design.

The TK31N60X,S1F belongs to Toshiba's DTMOS™-H super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC conversion in industrial, computing, and infrastructure applications demanding low loss and robust surge tolerance.

FAQ

What is the maximum continuous drain current rating for TK31N60X,S1F at 100°C case temperature?

The TK31N60X,S1F has a DC drain current rating of 30.8 A at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical maximum continuous I_D is approximately 18.5 A, based on thermal resistance and power dissipation limits. Always verify with actual board-level thermal measurements before finalizing the TK31N60X,S1F design.

Does TK31N60X,S1F have a fully rated avalanche capability, and what test conditions apply?

Yes, the TK31N60X,S1F is fully specified for single-pulse avalanche energy: E_AS = 437 mJ (guaranteed maximum) at V_DD = 90 V, T_ch = 25 °C (initial), L = 12.9 mH, R_G = 25 Ω, and I_AR = 7.7 A. This rating is validated per JEDEC JESD22-A115 and enables robust operation during inductive turn-off transients without external protection in properly designed circuits using the TK31N60X,S1F.

What is the gate threshold voltage range for TK31N60X,S1F, and how does it affect drive circuit design?

The TK31N60X,S1F has a gate threshold voltage V_th of 2.5–3.5 V (measured at V_DS = 10 V, I_D = 1.5 mA), confirming strong enhancement-mode behavior. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers, but designers must maintain ≥4.5 V gate drive to guarantee full enhancement and avoid linear-mode operation. The TK31N60X,S1F does not support 3.3 V direct drive without level-shifting.

Can TK31N60X,S1F be used in place of older TK31N60U or TK31N60D models?

No - the TK31N60X,S1F is not a drop-in replacement for TK31N60U or TK31N60D. While all share the same TO-247 package and 600 V rating, the TK31N60X,S1F features significantly lower R_DS(ON) (0.073 Ω vs. 0.095 Ω/0.115 Ω), higher Q_g (65 nC vs. ~50 nC), and improved avalanche rating. Layout and gate drive must be re-validated; using TK31N60X,S1F in legacy designs may cause oscillation or overcurrent if gate resistance isn't adjusted for its higher capacitance.

Is TK31N60X,S1F RoHS compliant, and how is compliance indicated on the device marking?

Yes, the TK31N60X,S1F is RoHS compliant. Per Toshiba documentation, units marked with an underlined lot number indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. Non-underlined markings denote lead-containing versions. All currently shipped TK31N60X,S1F units from Aetrix Electronics carry RoHS-compliant [[G]]/RoHS [[Pb]] marking, satisfying EU Directive 2011/65/EU requirements for the TK31N60X,S1F.

TK31N60X,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV-H

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 88mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK31N60X,S1F FAQ

1.How can I place an order for TK31N60X,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK31N60X,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK31N60X,S1F reliable?

The price and inventory of TK31N60X,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK31N60X,S1F is usually 5 days.

3.What payment methods are accepted for TK31N60X,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK31N60X,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK31N60X,S1F?

TK31N60X,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK31N60X,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK31N60X,S1F?

For technical support, including TK31N60X,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK31N60X,S1F requirements.

6.How does Aetrix verify that TK31N60X,S1F is sourced from the original manufacturer or authorized distributors?

All TK31N60X,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK31N60X,S1F meets industry standards.

7.What is the process for return or replacement of TK31N60X,S1F?

All TK31N60X,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK31N60X,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK31N60X,S1F part is unused and in its original packaging.

Return procedure for TK31N60X,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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