Toshiba Semiconductor and Storage TK31V60W,LVQ

Overview

TK31V60W,LVQ from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-efficiency, high-voltage switching in offline power supplies and DC-DC converters. It delivers R_DS(ON) = 0.078 Ω (typ.), V_DSS = 600 V, I_D = 30.8 A (DC), and operates with gate threshold voltage V_th = 2.7–3.7 V - enabling robust control in 400 V bus applications such as industrial AC-DC adapters.

For engineers reviewing the TK31V60W,LVQ datasheet, TK31V60W,LVQ pinout, TK31V60W,LVQ application, or TK31V60W,LVQ equivalent, key selection criteria include its DFN8x8 package thermal performance (R_th(ch-c) = 0.52 °C/W), avalanche ruggedness (E_AS = 338 mJ), and integrated body diode characteristics (V_DSF = −1.7 V, t_rr = 410 ns) critical for ZVS and hard-switching topologies.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching and high dv/dt immunity (≥50 V/ns). Its dual-source configuration (Source1 for gate return, Source2 for main current path) enables precise gate loop control and minimizes common-source inductance effects in high-frequency SMPS designs.

The TK31V60W,LVQ integrates an optimized body diode with Q_rr = 3.5 µC and I_rr = 17 A, supporting quasi-resonant and LLC converter operation without external freewheeling diodes. Its gate charge profile (Q_g = 86 nC, Q_gd = 41 nC) balances drive strength and switching loss trade-offs at 100–500 kHz operating frequencies.

Key Specifications

Pinout & Package

TK31V60W,LVQ uses the DFN8x8 (TOSHIBA 2-8T1A) surface-mount package with exposed drain pad for thermal conduction. The 8-pin layout features dual-source terminals to separate gate return and power return paths, reducing switching noise and improving stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW31N60DM6 and IXTH30N60L2, the TK31V60W,LVQ offers superior thermal density (0.52 vs. ≥0.75 °C/W), lower gate charge asymmetry (Q_gd/Q_g = 0.48 vs. 0.54), and integrated dual-source routing - delivering measurable efficiency gain (>0.4%) and layout simplification in space-constrained 1U and DIN-rail power systems.

Availability

TK31V60W,LVQ is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSUs, and solar microinverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for TK31V60W,LVQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TK31V60W,LVQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V-class industrial and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK31V60W,LVQ at case temperature of 100 °C?

The TK31V60W,LVQ supports 22 A DC drain current at T_c = 100 °C, derived from its absolute maximum I_D = 30.8 A at T_c = 25 °C and thermal derating slope of 0.35 A/°C above 25 °C. This value is confirmed in the Safe Operating Area (SOA) curve (Fig. 8.17) and aligns with its R_th(ch-c) = 0.52 °C/W specification. Designers must ensure heatsink design maintains T_c ≤ 100 °C under worst-case ambient and airflow conditions to sustain this current.

Does TK31V60W,LVQ require a negative gate voltage for reliable turn-off in high-noise environments?

No, the TK31V60W,LVQ does not require negative gate drive. Its gate threshold voltage range (2.7–3.7 V) and ±30 V gate-source rating allow robust turn-off with 0 V gate bias. However, applying −5 V enhances noise immunity in high-dV/dt applications like motor drives; this is optional and not required for basic operation. The device's low Crss (9.5 pF) and high dv/dt ruggedness (≥50 V/ns) further reduce susceptibility to false triggering.

Can TK31V60W,LVQ be used in parallel configurations without current-sharing resistors?

Yes, the TK31V60W,LVQ supports paralleling due to its positive temperature coefficient of R_DS(ON) (confirmed in Fig. 8.7), which promotes natural current balancing. However, matched gate drive layout (identical trace length/impedance to each Gate and Source1 pin) and symmetrical power routing to all Source2 pins are mandatory. Thermal coupling between devices on the same heatsink also improves balance; individual current monitoring is recommended for >3-device arrays.

What is the recommended PCB layout practice for the Source1 and Source2 pins of TK31V60W,LVQ?

For the TK31V60W,LVQ, Source1 must connect exclusively to the gate driver's local ground reference via the shortest possible low-inductance trace (<5 mm), while Source2 pins (3 and 4) must route high-current return paths directly to the main power ground plane using ≥3 thermal vias per pin. Mixing these paths induces gate oscillation and degrades switching performance. The datasheet explicitly states: "Use Source1 for gate input signal return" and "Ensure main current flows into Source2 pins."

Is TK31V60W,LVQ compliant with JEDEC moisture sensitivity level (MSL) standards for reflow soldering?

Yes, the TK31V60W,LVQ is rated MSL-3 per J-STD-020, with a floor life of 168 hours at ≤30 °C/60% RH. It supports standard lead-free reflow profiles (peak 260 °C, 20–40 sec above 217 °C) without popcorn cracking. The DFN8x8 package's 0.175 g typical weight and mold compound formulation meet IPC/JEDEC specifications; baking is required only if exposed beyond floor life or stored in non-dry-pack conditions.