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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK32A12N1,S4X

Name: TK32A12N1,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK32A12N1,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK32A12N1,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK32A12N1,S4X.pdf

Description:: MOSFET N-CH 120V 32A TO220SIS

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Product details

Overview

TK32A12N1,S4X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 60 A DC drain current, 120 V drain-source breakdown voltage, and ultra-low 11.0 mΩ (typ.) R_DS(ON) at V_GS = 10 V for efficient power conversion in industrial SMPS.

For engineers reviewing the TK32A12N1,S4X datasheet, TK32A12N1,S4X pinout, TK32A12N1,S4X application, or TK32A12N1,S4X equivalent, key selection criteria include avalanche energy rating (48 mJ), gate charge (34 nC), thermal resistance (4.16 °C/W channel-to-case), and TO-220SIS package compatibility with heatsink mounting.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance and fast switching with controlled Q_gd/Q_gs ratio. Its enhancement-mode threshold (2.0–4.0 V) ensures reliable turn-on with standard logic-level gate drivers.

It integrates an intrinsic body diode with 73 ns reverse recovery time and 160 nC Q_rr, enabling synchronous rectification and hard-switched flyback operation without external diode supplementation in many topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	120 V - supports input rails up to 100 V DC with margin for voltage spikes in offline and industrial power supplies
R_DS(ON) (typ.)	11.0 mΩ at V_GS = 10 V - reduces conduction loss to ≤10.6 W at 32 A continuous, critical for thermal management
I_D (DC)	60 A - enables single-device use in 500–1000 W switch-mode power supplies without paralleling
E_AS	48 mJ - withstands single-pulse inductive energy in motor drive freewheeling and relay snubbing
Q_g	34 nC - determines gate driver power requirement (~0.34 W at 100 kHz, V_GS swing = 10 V)
R_th(ch-c)	4.16 °C/W - allows 115 °C temperature rise across case interface at 30 W dissipation with standard heatsink
t_rr	73 ns - limits diode commutation loss during hard-switched transitions in half-bridge configurations

Pinout & Package

TK32A12N1,S4X is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with isolated tab, enabling direct heatsink mounting without insulating hardware while maintaining electrical isolation of the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V gate drive to fully enhance channel; requires <1.9 Ω series resistance to damp ringing per layout guidelines
2 (Drain)	High-side power terminal	Connected to input rail or inductive load return; electrically tied to metal tab in TO-220SIS package
3 (Source)	Power return reference	Serves as local ground reference for gate drive; must be low-inductance path to minimize V_GS noise during switching

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	11.0 mΩ typ. at 10 V drive enables >96% efficiency in 48 V/20 A buck converters at full load
Robust avalanche capability	48 mJ single-pulse rating supports unclamped inductive switching in motor control H-bridges without external clamping
Fast body diode recovery	73 ns t_rr and 160 nC Q_rr reduce cross-conduction loss in synchronous rectifier designs
Thermal performance	4.16 °C/W channel-to-case resistance allows 30 W continuous dissipation with modest heatsinking
Enhancement-mode gate	2.0–4.0 V V_th ensures clean turn-on with standard 5 V or 3.3 V microcontroller GPIO via buffer stage

Applications

Industrial Switch-Mode Power Supplies	Brushless DC Motor Drives
Use Scenario: Primary-side switching in 600 W telecom rectifiers operating from 380–400 V DC bus. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in phase-shifted full-bridge topology, switching at 100 kHz. Use Value: Low R_DS(ON) minimizes conduction loss under high-current conditions; avalanche rating handles transformer leakage energy.	Use Scenario: Lower-leg switching in three-phase inverter for HVAC compressor control (0–20 kHz PWM). IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling path in 60 A peak motor phase leg. Use Value: Fast body diode recovery eliminates need for external Schottky diodes; TO-220SIS package simplifies heatsink integration.
Server VRMs	Renewable Energy Inverters
Use Scenario: High-current step-down converter delivering 12 V/60 A to CPU core power stages. IC Role / Device Role / Timing Role: Main power switch in multiphase buck converter with 500 kHz switching frequency. Use Value: 34 nC total gate charge balances switching loss and drive complexity; low C_iss (2000 pF) eases gate driver selection.	Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Unidirectional power switch in boost pre-regulator stage handling 32 A continuous current. Use Value: 120 V V_DSS provides margin above 1000 V DC link transients; 110 A pulsed rating accommodates surge currents during MPPT transitions.

Industrial Switch-Mode Power Supplies

Brushless DC Motor Drives

Use Scenario: Primary-side switching in 600 W telecom rectifiers operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in phase-shifted full-bridge topology, switching at 100 kHz.

Use Value: Low R_DS(ON) minimizes conduction loss under high-current conditions; avalanche rating handles transformer leakage energy.

Use Scenario: Lower-leg switching in three-phase inverter for HVAC compressor control (0–20 kHz PWM).

IC Role / Device Role / Timing Role: Synchronous rectifier and freewheeling path in 60 A peak motor phase leg.

Use Value: Fast body diode recovery eliminates need for external Schottky diodes; TO-220SIS package simplifies heatsink integration.

Server VRMs

Renewable Energy Inverters

Use Scenario: High-current step-down converter delivering 12 V/60 A to CPU core power stages.

IC Role / Device Role / Timing Role: Main power switch in multiphase buck converter with 500 kHz switching frequency.

Use Value: 34 nC total gate charge balances switching loss and drive complexity; low C_iss (2000 pF) eases gate driver selection.

Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Unidirectional power switch in boost pre-regulator stage handling 32 A continuous current.

Use Value: 120 V V_DSS provides margin above 1000 V DC link transients; 110 A pulsed rating accommodates surge currents during MPPT transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF12	R_DS(ON) = 14 mΩ (typ.), E_AS = 32 mJ, TO-220FP package with non-isolated tab	Limited to lower-power SMPS due to higher conduction loss and reduced avalanche margin	Acceptable where board space constraints favor smaller footprint but thermal design can accommodate higher R_DS(ON)
IRF3205PBF	R_DS(ON) = 8.0 mΩ (typ.), but V_DSS = 55 V and no specified E_AS rating	Restricted to ≤48 V systems; unsuitable for 100 V+ bus applications or inductive energy absorption	Only viable in low-voltage motor drives or battery-powered equipment where 120 V rating is unnecessary

Compared with STP60NF12 and IRF3205PBF, TK32A12N1,S4X uniquely combines 120 V rating, 11 mΩ on-resistance, and guaranteed 48 mJ avalanche energy-making it the only option among the three qualified for industrial 100 V DC bus switching with robust fault tolerance.

Availability

TK32A12N1,S4X is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, brushless DC motor drives, server VRMs, and renewable energy inverters requiring stable component supply and long-term manufacturability.

Supply support for TK32A12N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete transistor design and manufacturing.

TK32A12N1,S4X belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and computing power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK32A12N1,S4X?

The TK32A12N1,S4X has a maximum continuous drain current (I_D) rating of 60 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature below 150 °C. At elevated case temperatures, derating applies per the Safe Operating Area curve in the datasheet, with 32 A permitted at T_c = 100 °C. The device also supports 110 A pulsed current for t ≤ 1 ms.

Does TK32A12N1,S4X have avalanche capability, and how is it specified?

Yes, TK32A12N1,S4X is rated for single-pulse avalanche energy (E_AS) of 48 mJ under defined test conditions (V_DD = 80 V, T_ch = 25 °C, L = 46.1 µH, I_AR = 32 A). This specification confirms its ability to absorb inductive energy during unclamped inductive switching events, such as those occurring in motor drive freewheeling or relay snubbing circuits.

What package type is used for TK32A12N1,S4X, and is the drain electrically connected to the tab?

TK32A12N1,S4X uses the TO-220SIS package (JEITA SC-67), which features an electrically isolated metal tab. Unlike standard TO-220, the drain (Pin 2) is not internally connected to the tab-enabling direct heatsink mounting without insulating pads or hardware. This isolation simplifies thermal design while maintaining safe creepage/clearance in high-voltage applications.

What is the typical gate charge and how does it impact driver selection for TK32A12N1,S4X?

The TK32A12N1,S4X has a typical total gate charge (Q_g) of 34 nC at V_GS = 10 V. For 100 kHz switching with 10 V gate swing, average gate drive power is ~0.34 W. A driver capable of ≥2 A peak source/sink current and low output impedance (<2 Ω) is recommended to achieve fast, controlled turn-on/turn-off and minimize switching losses.

Is TK32A12N1,S4X suitable for synchronous rectification, and what body diode parameters support this?

Yes, TK32A12N1,S4X is suitable for synchronous rectification due to its characterized body diode: reverse recovery time (t_rr) is 73 ns and reverse recovery charge (Q_rr) is 160 nC at I_DR = 32 A and dI/dt = 100 A/µs. These values enable low-loss commutation in buck and LLC topologies, reducing heat generation compared to external Schottky diodes in medium-frequency applications.

TK32A12N1,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK32A12N1,S4X FAQ

1.How can I place an order for TK32A12N1,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK32A12N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK32A12N1,S4X reliable?

The price and inventory of TK32A12N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK32A12N1,S4X is usually 5 days.

3.What payment methods are accepted for TK32A12N1,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK32A12N1,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK32A12N1,S4X?

TK32A12N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK32A12N1,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK32A12N1,S4X?

For technical support, including TK32A12N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK32A12N1,S4X requirements.

6.How does Aetrix verify that TK32A12N1,S4X is sourced from the original manufacturer or authorized distributors?

All TK32A12N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK32A12N1,S4X meets industry standards.

7.What is the process for return or replacement of TK32A12N1,S4X?

All TK32A12N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK32A12N1,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK32A12N1,S4X part is unused and in its original packaging.

Return procedure for TK32A12N1,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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