Toshiba Semiconductor and Storage TK33S10N1L,LQ

Overview

TK33S10N1L,LQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in DPAK+ (2-7M1A) package, designed for high-current automotive switching. It delivers 33 A DC drain current, 100 V drain-source breakdown voltage, and ultra-low 8.2 mΩ R_DS(ON) at V_GS = 10 V, enabling efficient motor drive and DC-DC converter operation in under-hood environments.

For engineers reviewing the TK33S10N1L,LQ datasheet, TK33S10N1L,LQ pinout, TK33S10N1L,LQ application, or TK33S10N1L,LQ equivalent, key selection criteria include avalanche ruggedness (101 mJ), gate threshold range (1.5–2.5 V), thermal resistance (1.2 °C/W channel-to-case), and AEC-Q101 qualification for automotive-grade reliability assurance.

Technical Context

This U-MOSⅧ-H technology MOSFET features enhancement-mode operation with tightly controlled V_th (1.5–2.5 V) and low gate charge (Q_g = 33 nC typ.), supporting fast, low-loss switching in synchronous buck converters and H-bridge motor drivers. Its 175 °C maximum channel temperature and 8.4 V/ns dV_DS/dt rating ensure robustness against voltage transients in noisy automotive systems.

The integrated body diode exhibits 66 ns reverse recovery time and 60 nC Q_rr, minimizing commutation losses in freewheeling paths. Thermal design is anchored by a low R_th(ch-c) of 1.2 °C/W and a heatsink-connected drain terminal, enabling high-power density layouts without external thermal vias.

Key Specifications

Pinout & Package

DPAK+ (Toshiba 2-7M1A) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Drain terminal serves as heatsink connection point; gate and source are on standard leadframe terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N10F7 and IRF3205PBF, TK33S10N1L,LQ uniquely balances AEC-Q101 compliance, 100 V rating, and DPAK+ thermal performance - making it optimal for space-constrained automotive modules requiring guaranteed reliability over 15-year vehicle lifetimes.

Availability

TK33S10N1L,LQ is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and onboard charger DC-DC stages requiring stable component supply across extended production cycles.

Supply support for TK33S10N1L,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with focus on automotive, industrial, and consumer reliability standards.

The TK33S10N1L,LQ belongs to Toshiba's U-MOSⅧ-H automotive MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine bay and chassis-mounted electronic control units.

FAQ

What is the maximum continuous drain current rating for TK33S10N1L,LQ at 100 °C case temperature?

The TK33S10N1L,LQ supports 33 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.13); the maximum continuous current drops to approximately 22 A due to thermal limitations and R_DS(ON) increase. Always verify actual channel temperature using R_th(ch-c) = 1.2 °C/W and measured power dissipation.

Is TK33S10N1L,LQ suitable for use in a 48 V mild-hybrid automotive system?

Yes, TK33S10N1L,LQ is explicitly rated for 100 V drain-source voltage and qualified to AEC-Q101, making it suitable for 48 V mild-hybrid systems. Its 100 V rating provides sufficient margin against ISO 16750-2 load dump transients (up to 60 V for 48 V systems), and its 175 °C channel temperature rating supports under-hood operation.

Does TK33S10N1L,LQ have a specified reverse recovery time for its body diode?

Yes, the TK33S10N1L,LQ body diode has a typical reverse recovery time (t_rr) of 66 ns and reverse recovery charge (Q_rr) of 60 nC under conditions of I_DR = 33 A, V_GS = 0 V, and -dI_DR/dt = 50 A/µs. These values are critical for designing snubber networks and evaluating cross-conduction risk in synchronous rectifier applications.

What is the gate threshold voltage range for TK33S10N1L,LQ, and how does it affect logic-level drive compatibility?

The TK33S10N1L,LQ has a gate threshold voltage (V_th) range of 1.5 V to 2.5 V at V_DS = 10 V and I_D = 0.5 mA. This ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs or logic-level gate drivers, eliminating the need for external level-shifting circuitry in most automotive MCU-based motor control designs.

How is thermal performance characterized for TK33S10N1L,LQ, and what does R_th(ch-c) = 1.2 °C/W mean in practice?

TK33S10N1L,LQ specifies a channel-to-case thermal resistance of 1.2 °C/W. This means that for every watt of power dissipated in the die, the junction temperature rises 1.2 °C above the case (drain pad) temperature. In practice, this enables direct thermal coupling to a PCB copper pour or heatsink - achieving full 33 A current capability requires maintaining T_c ≤ 25 °C via adequate copper area and airflow.