My Inquiry
My Account
Toshiba Semiconductor and Storage TK33S10N1L,LXHQ
- Part No.:
- TK33S10N1L,LXHQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
TK33S10N1L,LXHQ.pdf
- Description:
- MOSFET N-CH 100V 33A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,536
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TK33S10N1L,LXHQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-current automotive switching. It delivers 33 A DC drain current, 8.2 mΩ RDS(ON) at VGS = 10 V, and 100 V drain-source breakdown voltage, operating reliably up to 175 °C channel temperature in motor drivers and DC-DC regulators.
For engineers reviewing the TK33S10N1L,LXHQ datasheet, TK33S10N1L,LXHQ pinout, TK33S10N1L,LXHQ application, or TK33S10N1L,LXHQ equivalent, this page provides verified electrical specs, thermal limits, gate charge data, avalanche ruggedness (101 mJ), and DPAK+ package terminal mapping - all critical for automotive-grade layout, SOA validation, and thermal design.
Technical Context
This MOSFET uses Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance and fast switching with controlled Qgd/Qg ratio (8/33 nC). Its enhancement-mode threshold (1.5–2.5 V) enables direct 3.3 V/5 V logic-level drive compatibility when paired with appropriate gate resistors.
The device integrates a robust body diode with 66 ns reverse recovery time and 60 nC Qrr, supporting synchronous rectification and freewheeling in hard-switched topologies. Its 8.4 V/ns dVDS/dt rating and guaranteed single-pulse avalanche energy (101 mJ) support reliable operation under inductive load transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports 48 V automotive systems with ≥2× safety margin against load-dump transients |
| RDS(ON) (typ.) | 8.2 mΩ at VGS = 10 V - enables <1 W conduction loss at 33 A, reducing heatsink requirements |
| ID (DC) | 33 A at Tc = 25 °C - rated for continuous high-current operation with proper heatsinking |
| EAS | 101 mJ - withstands inductive energy spikes without failure in motor control or SMPS freewheeling |
| Rth(ch-c) | 1.2 °C/W - allows precise junction-to-heatsink thermal modeling for automotive under-hood environments |
| Qg | 33 nC - determines gate driver power and switching loss; compatible with standard 1-A peak drivers |
| Vth | 1.5–2.5 V - ensures turn-on with 3.3 V microcontrollers while avoiding false triggering from noise |
Pinout & Package
TK33S10N1L,LXHQ is housed in a surface-mount DPAK+ (TOSHIBA 2-7M1A) package with exposed drain pad for thermal and electrical connection to PCB heatsink. The package weighs 0.36 g and features RoHS-compliant plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires ESD-safe handling and ≤25 Ω series resistance to limit ringing and overshoot |
| 2 | Drain (D) | Main power output node; electrically and thermally connected to exposed copper pad for low-inductance, high-current path |
| 3 | Source (S) | Power return reference; ties to ground plane; establishes VGS control voltage relative to load current path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, ADAS actuators, and body electronics per stress test requirements |
| Low RDS(ON) × Qg figure-of-merit | 270 mΩ·nC - balances conduction and switching losses for high-efficiency 100 kHz–500 kHz DC-DC converters |
| High dVDS/dt ruggedness | 8.4 V/ns - prevents spurious turn-on during fast voltage transitions in half-bridge configurations |
| Robust body diode | 66 ns trr, 60 nC Qrr - reduces voltage spikes and EMI in inductive switching, enabling simpler snubber design |
| 175 °C maximum channel temperature | Supports operation in under-hood environments (e.g., EPS, HVAC blowers) without derating at full current |
Applications
| Electric Power Steering (EPS) | Automotive DC-DC Converters |
|---|---|
|
Use Scenario: High-reliability H-bridge motor driver controlling 12 V or 48 V steering assist motors. IC Role / Device Role / Timing Role: Main switching element in dual-phase bridge leg; handles bidirectional 30+ A peak currents with PWM up to 20 kHz. Use Value: AEC-Q101 qualification and 101 mJ avalanche energy ensure fail-safe operation during sudden torque reversal or stall conditions. |
Use Scenario: Primary-side switch in isolated 12 V → 5 V/3.3 V buck-boost converter for infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: High-side power switch operating at 300 kHz with synchronous rectification; manages 25 A load steps. Use Value: 8.2 mΩ RDS(ON) minimizes conduction loss at full load, while 33 nC Qg enables efficient gate driving with low-power controllers. |
| Industrial Motor Drives | On-Board Charger (OBC) Auxiliary Supplies |
|
Use Scenario: Inverter stage for 1–3 kW BLDC pumps and fans in commercial vehicle HVAC and cooling systems. IC Role / Device Role / Timing Role: Six-pack discrete switch in three-phase inverter; operated with space-vector modulation at 10–16 kHz. Use Value: 1.2 °C/W Rth(ch-c) enables direct mounting to aluminum chassis, eliminating dedicated heatsinks and reducing BOM cost. |
Use Scenario: Secondary-side synchronous rectifier or auxiliary supply switch in 6.6 kW OBC control boards. IC Role / Device Role / Timing Role: Low-side switch regulating auxiliary 12 V rail powering MCU, CAN transceivers, and sensors during charging cycles. Use Value: 1.5–2.5 V Vth ensures clean turn-on from 3.3 V LDO outputs, preventing brownout-induced reset during transient loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, 1.8 mΩ RDS(ON), TO-220FP package; higher current but larger footprint and no AEC-Q101 certification | Targeted at industrial UPS and solar inverters - not qualified for automotive ECU placement | Select when board space permits larger through-hole package and AEC-Q101 is not required |
| IRF3205PbF | 55 V, 110 A, 8.0 mΩ RDS(ON), TO-220AB; lower voltage rating and non-automotive qualification | Suitable for 24 V industrial motor drives but unsafe for 48 V automotive transients | Choose only for legacy 24 V systems where VDSS margin is sufficient and automotive reliability is not mandated |
Compared with STL220N10F7 and IRF3205PbF, TK33S10N1L,LXHQ offers the only AEC-Q101-qualified 100 V solution in DPAK+, delivering optimal thermal performance (1.2 °C/W) and avalanche robustness (101 mJ) for space-constrained automotive modules requiring zero derating at 33 A.
Availability
TK33S10N1L,LXHQ is available at Aetrix Electronics and suitable for automotive motor control, on-board power conversion, and industrial actuation systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for TK33S10N1L,LXHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability semiconductor components, with core expertise in power devices, logic ICs, and storage solutions for automotive, industrial, and consumer markets.
TK33S10N1L,LXHQ belongs to Toshiba's U-MOSⅧ-H automotive MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current rating for TK33S10N1L,LXHQ?
The TK33S10N1L,LXHQ is rated for 33 A DC drain current at case temperature Tc = 25 °C. At higher case temperatures, current must be derated per the Safe Operating Area curve in the datasheet; at Tc = 100 °C, the practical limit drops to approximately 22 A to maintain channel temperature ≤175 °C.
Is TK33S10N1L,LXHQ suitable for 48 V mild-hybrid automotive systems?
Yes, TK33S10N1L,LXHQ is explicitly designed for 48 V automotive applications. Its 100 V VDSS rating provides >2× margin over nominal 48 V bus, and its AEC-Q101 qualification covers temperature cycling, humidity, and mechanical shock tests required for mild-hybrid powertrain modules.
Does TK33S10N1L,LXHQ have a built-in body diode, and what are its key parameters?
Yes, TK33S10N1L,LXHQ integrates a fast-recovery body diode characterized at 33 A reverse current: typical reverse recovery time (trr) is 66 ns and reverse recovery charge (Qrr) is 60 nC. These values enable efficient freewheeling in synchronous buck and half-bridge topologies without external diodes.
What gate drive voltage is recommended for optimal RDS(ON) performance of TK33S10N1L,LXHQ?
TK33S10N1L,LXHQ achieves its specified 8.2 mΩ RDS(ON) at VGS = 10 V. For full enhancement with margin, a 12 V gate drive is recommended. It remains fully enhanced down to VGS = 4.5 V (RDS(ON) ≤ 16.2 mΩ), enabling compatibility with 5 V logic and certain 3.3 V controllers using level-shifting.
How does the DPAK+ package of TK33S10N1L,LXHQ improve thermal performance over standard DPAK?
The DPAK+ (TOSHIBA 2-7M1A) package used by TK33S10N1L,LXHQ features an enlarged exposed drain pad and optimized internal leadframe geometry, achieving 1.2 °C/W channel-to-case thermal resistance - 15% lower than standard DPAK. This directly improves power dissipation capability and reduces PCB heatsink area requirements.
TK33S10N1L,LXHQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.7mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2250 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK+
TK33S10N1L,LXHQ FAQ
1.How can I place an order for TK33S10N1L,LXHQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK33S10N1L,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK33S10N1L,LXHQ reliable?
The price and inventory of TK33S10N1L,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK33S10N1L,LXHQ is usually 5 days.
3.What payment methods are accepted for TK33S10N1L,LXHQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK33S10N1L,LXHQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK33S10N1L,LXHQ?
TK33S10N1L,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK33S10N1L,LXHQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK33S10N1L,LXHQ?
For technical support, including TK33S10N1L,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK33S10N1L,LXHQ requirements.
6.How does Aetrix verify that TK33S10N1L,LXHQ is sourced from the original manufacturer or authorized distributors?
All TK33S10N1L,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK33S10N1L,LXHQ meets industry standards.
7.What is the process for return or replacement of TK33S10N1L,LXHQ?
All TK33S10N1L,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TK33S10N1L,LXHQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK33S10N1L,LXHQ part is unused and in its original packaging.
Return procedure for TK33S10N1L,LXHQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TK33S10N1L,LXHQ Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
