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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK33S10N1Z,LQ

Name: TK33S10N1Z,LQ
Brand: Toshiba Semiconductor and Storage
SKU: TK33S10N1Z,LQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK33S10N1Z,LQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK33S10N1Z,LQ.pdf

Description:: MOSFET N-CH 100V 33A DPAK

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Product details

Overview

TK33S10N1Z,LQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in DPAK+ (2-7M1A) package, designed for high-current switching in automotive and industrial systems. It delivers R_DS(ON) = 8.2 mΩ (typ.) at V_GS = 10 V, supports 33 A DC drain current, and withstands 100 V drain-source voltage - enabling efficient operation in motor drivers and switching voltage regulators.

For engineers reviewing the TK33S10N1Z,LQ datasheet, TK33S10N1Z,LQ pinout, TK33S10N1Z,LQ application, or TK33S10N1Z,LQ equivalent, this page provides verified electrical specifications, thermal performance data, gate charge characteristics, avalanche ruggedness metrics, and validated alternative parts for automotive-grade power design validation.

Technical Context

This U-MOSⅧ-H technology MOSFET features enhancement-mode operation with V_th = 2.0–4.0 V (V_DS = 10 V, I_D = 0.5 mA), low leakage (I_DSS ≤ 10 µA at V_DS = 100 V), and robust single-pulse avalanche capability (E_AS = 66.5 mJ). Its channel-to-case thermal resistance is 1.2 °C/W, supporting high-power density layouts when mounted on heatsinks via the exposed drain pad.

The device integrates a built-in body diode with t_rr = 56 ns (typ.) and Q_rr = 90 nC (typ.), optimized for synchronous rectification and hard-switched topologies. Dynamic parameters include C_iss = 2050 pF, C_rss = 140 pF, and total gate charge Q_g = 28 nC (V_DD ≈ 80 V, I_D = 33 A), enabling fast, controllable switching with moderate gate drive requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; defines safe operating range in 48 V automotive and industrial bus applications.
R_DS(ON)	8.2 mΩ (typ.) at V_GS = 10 V - Enables <1 W conduction loss at 33 A, critical for thermally constrained motor driver PCBs.
I_D (DC)	33 A - Continuous current rating at T_c = 25 °C; derates to zero at T_c = 175 °C per SOA curve.
E_AS	66.5 mJ - Single-pulse avalanche energy; supports reliable operation during inductive load turn-off transients without external snubbers.
Q_g	28 nC - Total gate charge required for full enhancement; determines gate driver power and switching speed trade-offs.
t_r/t_f	8.4 ns / 11.5 ns - Rise/fall times under defined test conditions; enables >500 kHz switching in SMPS designs.
R_th(ch-c)	1.2 °C/W - Thermal resistance from channel to case; requires direct heatsink contact on drain pad for rated power dissipation.

Pinout & Package

TK33S10N1Z,LQ uses the DPAK+ (Toshiba 2-7M1A) surface-mount package with an exposed drain pad for thermal and electrical connection. The package weighs 0.36 g (typ.) and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥10 V drive for full enhancement; sensitive to ESD (±10 µA max I_GSS).
2	Drain (heatsink)	Main high-side current path; electrically and thermally connected to exposed copper pad - must be soldered to PCB copper pour or heatsink.
3	Source	Reference node for gate drive and current sensing; connects to low-side return path in half-bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood use including temperature cycling, HTRB, and UIS stress - enables deployment in EPS, HVAC, and ADAS subsystems.
Low R_DS(ON) with U-MOSⅧ-H process	8.2 mΩ typ. at 10 V drive reduces conduction losses by >30% vs. legacy U-MOSⅦ devices at same die size.
High dV_DS/dt ruggedness	8.4 V/ns - Ensures immunity to parasitic turn-on during fast voltage transitions in high-frequency inverters.
Integrated body diode with low Q_rr	90 nC reverse recovery charge - minimizes switching loss and EMI in freewheeling paths of buck converters and motor drives.
175 °C channel temperature rating	Enables operation in high-ambient environments (e.g., engine bay) when combined with proper thermal design and derating.

Applications

Electric Power Steering (EPS)	48 V DC-DC Converters
Use Scenario: High-reliability motor phase switching in column-assist EPS modules requiring continuous 30 A peak current handling. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge; commutates motor windings with precise PWM timing. Use Value: AEC-Q101 qualification and 66.5 mJ avalanche energy ensure fail-safe operation during sudden load dumps or short-circuit events.	Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V bidirectional DC-DC converters for mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-efficiency power switch in active clamp forward topology; operates at 200–300 kHz with tight dead-time control. Use Value: 8.2 mΩ R_DS(ON) and 28 nC Q_g enable >97% conversion efficiency while maintaining thermal margin at full 3 kW output.
Industrial BLDC Motor Drives	Automotive HVAC Blower Systems
Use Scenario: Inverter stage for 1–3 kW permanent magnet BLDC motors in CNC spindles and robotic joints. IC Role / Device Role / Timing Role: Half-bridge low-side switch; synchronized with complementary high-side gate drive for six-step commutation. Use Value: 1.2 °C/W R_th(ch-c) allows direct heatsink mounting, eliminating need for thermal interface material in compact enclosures.	Use Scenario: Speed-controlled blower fan in automotive cabin air systems with PWM-based airflow regulation. IC Role / Device Role / Timing Role: High-side switch controlling 24 V/15 A resistive-inductive load; driven by automotive-compliant gate driver IC. Use Value: V_th = 2.0–4.0 V ensures clean turn-on with standard 5 V logic-level signals, reducing gate driver complexity and BOM cost.

Electric Power Steering (EPS)

48 V DC-DC Converters

Use Scenario: High-reliability motor phase switching in column-assist EPS modules requiring continuous 30 A peak current handling.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge; commutates motor windings with precise PWM timing.

Use Value: AEC-Q101 qualification and 66.5 mJ avalanche energy ensure fail-safe operation during sudden load dumps or short-circuit events.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V bidirectional DC-DC converters for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-efficiency power switch in active clamp forward topology; operates at 200–300 kHz with tight dead-time control.

Use Value: 8.2 mΩ R_DS(ON) and 28 nC Q_g enable >97% conversion efficiency while maintaining thermal margin at full 3 kW output.

Industrial BLDC Motor Drives

Automotive HVAC Blower Systems

Use Scenario: Inverter stage for 1–3 kW permanent magnet BLDC motors in CNC spindles and robotic joints.

IC Role / Device Role / Timing Role: Half-bridge low-side switch; synchronized with complementary high-side gate drive for six-step commutation.

Use Value: 1.2 °C/W R_th(ch-c) allows direct heatsink mounting, eliminating need for thermal interface material in compact enclosures.

Use Scenario: Speed-controlled blower fan in automotive cabin air systems with PWM-based airflow regulation.

IC Role / Device Role / Timing Role: High-side switch controlling 24 V/15 A resistive-inductive load; driven by automotive-compliant gate driver IC.

Use Value: V_th = 2.0–4.0 V ensures clean turn-on with standard 5 V logic-level signals, reducing gate driver complexity and BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 220 A (T_c = 25 °C), R_DS(ON) = 3.0 mΩ (typ.), DFN8 5×6 mm package - higher current, lower R_DS(ON), but no AEC-Q101 certification.	Suitable for non-automotive industrial inverters where qualification is not mandated; requires different layout due to DFN footprint.	Select when higher current headroom and lower conduction loss are prioritized over automotive qualification and DPAK+ compatibility.
IXTH30N10D2	100 V, 30 A (T_c = 25 °C), R_DS(ON) = 10.5 mΩ (typ.), TO-247 package - higher R_DS(ON), through-hole mounting, no AEC-Q101.	Better suited for prototyping or low-volume industrial SMPS where manual assembly and heatsink flexibility outweigh SMT constraints.	Choose for lab validation or legacy designs using TO-247 sockets; avoid in production automotive systems requiring AEC-Q101 compliance.

Compared with STL220N10F7 and IXTH30N10D2, TK33S10N1Z,LQ uniquely balances AEC-Q101 qualification, DPAK+ manufacturability, and 8.2 mΩ conduction loss - making it the only option qualified for volume automotive motor control without package or reliability compromises.

Availability

TK33S10N1Z,LQ is available at Aetrix Electronics and suitable for automotive motor control, 48 V DC-DC conversion, and industrial BLDC drive applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK33S10N1Z,LQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on automotive, industrial, and consumer reliability standards.

The TK33S10N1Z,LQ belongs to Toshiba's U-MOSⅧ-H automotive-qualified power MOSFET family, engineered specifically for high-efficiency, high-ruggedness switching in engine bay and chassis-mounted electronic control units.

FAQ

What is the maximum junction temperature rating for TK33S10N1Z,LQ?

The absolute maximum channel temperature (T_ch) for TK33S10N1Z,LQ is 175 °C, as defined in the AEC-Q101 qualification and confirmed in the Absolute Maximum Ratings table. This rating applies under continuous operation with proper thermal management - including heatsink attachment to the exposed drain pad - and must be respected in all automotive and industrial thermal designs.

Is TK33S10N1Z,LQ pin-compatible with other DPAK+ MOSFETs?

TK33S10N1Z,LQ uses the standardized DPAK+ (2-7M1A) footprint with Gate-Drain-Source pinout (1-2-3), matching industry-standard DPAK+ layouts. However, pin compatibility alone does not guarantee functional interchangeability - R_DS(ON), Q_g, and avalanche ratings must be verified against the target application's SOA and switching requirements before substitution.

Does TK33S10N1Z,LQ have a built-in body diode, and what are its key parameters?

Yes, TK33S10N1Z,LQ includes an integrated body diode with reverse recovery time t_rr = 56 ns (typ.) and reverse recovery charge Q_rr = 90 nC (typ.) at I_DR = 33 A and -dI_DR/dt = 100 A/µs. These values are specified in Section 6.4 of the datasheet and support efficient freewheeling in hard-switched topologies without external diodes.

What gate drive voltage is required to fully enhance TK33S10N1Z,LQ?

TK33S10N1Z,LQ is specified for full enhancement at V_GS = 10 V, delivering its rated R_DS(ON) of 8.2 mΩ (typ.). Its gate threshold voltage V_th ranges from 2.0 V to 4.0 V (V_DS = 10 V, I_D = 0.5 mA), allowing logic-level drive, but 10 V is required to achieve minimum on-resistance and optimal efficiency in production systems.

How is TK33S10N1Z,LQ marked for RoHS compliance?

Per the Marking section (Figure 7.1), TK33S10N1Z,LQ uses underlined lot numbers to indicate RoHS-compliant labeling ([[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]). Non-underlined markings denote lead-containing versions. RoHS status must be confirmed per order code and verified with Toshiba's sales representative or official product change notices.

TK33S10N1Z,LQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.7mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2050 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK+

TK33S10N1Z,LQ FAQ

1.How can I place an order for TK33S10N1Z,LQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK33S10N1Z,LQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK33S10N1Z,LQ reliable?

The price and inventory of TK33S10N1Z,LQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK33S10N1Z,LQ is usually 5 days.

3.What payment methods are accepted for TK33S10N1Z,LQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK33S10N1Z,LQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK33S10N1Z,LQ?

TK33S10N1Z,LQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK33S10N1Z,LQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK33S10N1Z,LQ?

For technical support, including TK33S10N1Z,LQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK33S10N1Z,LQ requirements.

6.How does Aetrix verify that TK33S10N1Z,LQ is sourced from the original manufacturer or authorized distributors?

All TK33S10N1Z,LQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK33S10N1Z,LQ meets industry standards.

7.What is the process for return or replacement of TK33S10N1Z,LQ?

All TK33S10N1Z,LQ units undergo pre-shipment inspection (PSI). If there is an issue with TK33S10N1Z,LQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK33S10N1Z,LQ part is unused and in its original packaging.

Return procedure for TK33S10N1Z,LQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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