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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK33S10N1Z,LXHQ

Name: TK33S10N1Z,LXHQ
Brand: Toshiba Semiconductor and Storage
SKU: TK33S10N1Z,LXHQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK33S10N1Z,LXHQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK33S10N1Z,LXHQ.pdf

Description:: MOSFET N-CH 100V 33A DPAK

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Product details

Overview

TK33S10N1Z,LXHQ from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified silicon N-channel power MOSFET in U-MOSⅧ-H process, designed for high-current switching in automotive and industrial systems. It delivers 33 A DC drain current, 100 V drain-source breakdown voltage, and ultra-low 8.2 mΩ (typ.) R_DS(ON) at V_GS = 10 V, enabling efficient operation in motor drivers and DC-DC converters.

For engineers reviewing the TK33S10N1Z,LXHQ datasheet, TK33S10N1Z,LXHQ pinout, TK33S10N1Z,LXHQ application, or TK33S10N1Z,LXHQ equivalent, key selection criteria include its DPAK+ package thermal performance (R_th(ch-c) = 1.2 °C/W), avalanche ruggedness (E_AS = 66.5 mJ), and gate charge profile (Q_g = 28 nC) for optimized switching loss and layout stability.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance while maintaining robust safe operating area (SOA) and single-pulse avalanche capability. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable gate drive compatibility with standard 3.3 V/5 V/10 V logic interfaces.

The device integrates a fast-recovery body diode (t_rr = 56 ns, Q_rr = 90 nC) and exhibits high dV_DS/dt ruggedness (8.4 V/ns), supporting stable operation in hard-switched topologies without external snubbers under defined conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports 48 V and 60 V bus systems with margin against transients
R_DS(ON) (typ.)	8.2 mΩ @ V_GS = 10 V - reduces conduction loss to ≤1.3 W at 33 A, easing thermal design
I_D (DC)	33 A - enables compact high-power switching in space-constrained automotive modules
E_AS	66.5 mJ - withstands inductive energy spikes in motor commutation and relay driving
Q_g	28 nC - balances switching speed and gate driver stress for 100–500 kHz operation
R_th(ch-c)	1.2 °C/W - allows direct heatsink mounting via exposed drain pad for <100 °C temperature rise at 125 W dissipation
t_rr	56 ns - minimizes reverse recovery loss and EMI in synchronous rectification and half-bridge configurations

Pinout & Package

TK33S10N1Z,LXHQ uses the DPAK+ (TOSHIBA 2-7M1A) surface-mount package with an exposed drain pad for thermal and electrical connection. The package weighs 0.36 g and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	High-impedance terminal requiring low-charge drive (Q_gs1 = 10 nC); sensitive to ESD
2: Drain (heatsink)	Main current path output / thermal interface	Exposed metal pad electrically connected to drain; must be soldered to PCB copper pour for thermal management
3: Source	Reference node / return path	Common reference for gate drive and load current; connects to ground or low-side switch node

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood applications per stress test requirements including HTOL, TC, HTRB, and UHAST
Low R_DS(ON) with U-MOSⅧ-H	8.2 mΩ typ. enables >96% efficiency in 12 V → 5 V/30 A buck converters at full load
High avalanche energy rating	66.5 mJ single-pulse rating supports unclamped inductive switching in BLDC motor phases without external protection
Fast body diode recovery	56 ns t_rr and 90 nC Q_rr reduce cross-conduction loss and voltage overshoot in synchronous rectifiers
Robust dV_DS/dt immunity	8.4 V/ns rated ruggedness prevents false turn-on during high-speed switching in noisy environments

Applications

Automotive Body Control Module	Industrial DC-DC Converter
Use Scenario: Driving high-current solenoids, fans, and lighting loads in vehicle door modules and central junction boxes. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling up to 33 A resistive/inductive loads with PWM dimming or soft-start sequencing. Use Value: AEC-Q101 qualification and 100 V V_DSS ensure reliability across battery voltage transients (load dump, cold crank); low R_DS(ON) limits self-heating during continuous duty.	Use Scenario: Primary-side switching element in isolated 48 V–12 V telecom or server power supplies operating at 250 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch managing high peak currents and fast voltage transitions. Use Value: 28 nC Q_g and 56 ns t_rr minimize switching losses and EMI generation; DPAK+ thermal resistance enables convection-cooled designs.
Brushless DC Motor Driver	EV Onboard Charger Input Stage
Use Scenario: Low-side switching in three-phase inverter stages for 1–3 kW e-bike or power tool motors. IC Role / Device Role / Timing Role: Phase-leg switch handling 33 A RMS current with 99 A pulsed capability during startup and overload. Use Value: 66.5 mJ E_AS absorbs commutation energy without failure; SOA curve supports linear-mode operation during stall detection.	Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC front-end, operating at 100 kHz with 400 V DC link. IC Role / Device Role / Timing Role: High-efficiency, high-voltage switching transistor in continuous conduction mode (CCM) PFC stage. Use Value: 100 V rating provides margin above 400 V bus with safety factor; low Q_gd/Q_g ratio improves controllability under high dV_DS/dt.

Automotive Body Control Module

Industrial DC-DC Converter

Use Scenario: Driving high-current solenoids, fans, and lighting loads in vehicle door modules and central junction boxes.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling up to 33 A resistive/inductive loads with PWM dimming or soft-start sequencing.

Use Value: AEC-Q101 qualification and 100 V V_DSS ensure reliability across battery voltage transients (load dump, cold crank); low R_DS(ON) limits self-heating during continuous duty.

Use Scenario: Primary-side switching element in isolated 48 V–12 V telecom or server power supplies operating at 250 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier or active clamp switch managing high peak currents and fast voltage transitions.

Use Value: 28 nC Q_g and 56 ns t_rr minimize switching losses and EMI generation; DPAK+ thermal resistance enables convection-cooled designs.

Brushless DC Motor Driver

EV Onboard Charger Input Stage

Use Scenario: Low-side switching in three-phase inverter stages for 1–3 kW e-bike or power tool motors.

IC Role / Device Role / Timing Role: Phase-leg switch handling 33 A RMS current with 99 A pulsed capability during startup and overload.

Use Value: 66.5 mJ E_AS absorbs commutation energy without failure; SOA curve supports linear-mode operation during stall detection.

Use Scenario: AC-DC PFC boost switch in 3.3 kW OBC front-end, operating at 100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: High-efficiency, high-voltage switching transistor in continuous conduction mode (CCM) PFC stage.

Use Value: 100 V rating provides margin above 400 V bus with safety factor; low Q_gd/Q_g ratio improves controllability under high dV_DS/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 220 A, R_DS(ON) = 3.2 mΩ (typ.), PowerFLAT 8x8 package, non-AEC-Q101	Higher current rating but larger footprint and no automotive qualification	Preferred for high-power industrial inverters where board space permits and AEC-Q101 is not required
IRF3205PBF	55 V, 110 A, R_DS(ON) = 8.0 mΩ (typ.), TO-220AB, non-AEC-Q101	Lower voltage rating, through-hole package, no automotive qualification or avalanche rating	Suitable for cost-sensitive 12/24 V industrial controls where 100 V margin and automotive reliability are unnecessary

Compared with STL220N10F7 and IRF3205PBF, TK33S10N1Z,LXHQ offers AEC-Q101 compliance, DPAK+ thermal efficiency, and guaranteed avalanche energy-making it uniquely suited for space- and reliability-constrained automotive power stages where 33 A/100 V operation is optimal.

Availability

TK33S10N1Z,LXHQ is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and brushless DC motor drivers requiring stable component supply and long-term lifecycle support.

Supply support for TK33S10N1Z,LXHQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in automotive-grade reliability and trench-MOS technology.

The TK33S10N1Z,LXHQ belongs to Toshiba's U-MOSⅧ-H automotive power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in engine control units, ADAS power supplies, and electrified vehicle subsystems.

FAQ

What is the gate threshold voltage range for TK33S10N1Z,LXHQ?

The gate threshold voltage (V_th) of TK33S10N1Z,LXHQ is specified from 2.0 V to 4.0 V at V_DS = 10 V and I_D = 0.5 mA. This range ensures compatibility with both 3.3 V and 5 V microcontroller outputs while providing noise immunity against false turn-on in automotive environments. The TK33S10N1Z,LXHQ maintains stable enhancement-mode behavior across temperature and manufacturing variation.

Is TK33S10N1Z,LXHQ suitable for synchronous rectification?

Yes, TK33S10N1Z,LXHQ is suitable for synchronous rectification due to its fast body diode with 56 ns reverse recovery time (t_rr) and low 90 nC reverse recovery charge (Q_rr). These parameters reduce switching loss and voltage overshoot when used as a low-side switch in buck or flyback topologies. The TK33S10N1Z,LXHQ's R_DS(ON) of 8.2 mΩ further improves conduction efficiency over Schottky diodes at higher currents.

Does TK33S10N1Z,LXHQ have avalanche capability, and how is it rated?

Yes, TK33S10N1Z,LXHQ is rated for single-pulse avalanche energy (E_AS) of 66.5 mJ under defined test conditions (V_DD = 80 V, T_ch = 25 °C, L = 47 µH, R_G = 25 Ω, I_AS = 33 A). This rating validates its ability to absorb inductive energy during unclamped inductive switching events-critical for motor driver and relay control applications. The TK33S10N1Z,LXHQ's SOA curve also supports linear-mode operation within defined boundaries.

What is the thermal resistance from channel to case for TK33S10N1Z,LXHQ?

The channel-to-case thermal resistance (R_th(ch-c)) of TK33S10N1Z,LXHQ is 1.2 °C/W maximum. This value is measured with the drain pad fully soldered to a large copper area on the PCB, enabling effective heat transfer to an external heatsink. When designing with TK33S10N1Z,LXHQ, this low R_th allows for predictable junction temperature estimation and supports operation up to 175 °C channel temperature under proper layout conditions.

How does the DPAK+ package of TK33S10N1Z,LXHQ differ from standard DPAK?

The DPAK+ package (TOSHIBA 2-7M1A) used by TK33S10N1Z,LXHQ features an enlarged drain pad and optimized internal leadframe geometry compared to standard DPAK, improving thermal dissipation and current handling. It retains the same footprint and pinout as industry-standard DPAK but achieves lower R_th(ch-c) (1.2 °C/W vs. ~1.5–2.0 °C/W typical for legacy DPAK). The TK33S10N1Z,LXHQ's DPAK+ requires no PCB redesign when upgrading from standard DPAK MOSFETs with equivalent pin count.

TK33S10N1Z,LXHQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.7mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2050 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK+

TK33S10N1Z,LXHQ FAQ

1.How can I place an order for TK33S10N1Z,LXHQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK33S10N1Z,LXHQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK33S10N1Z,LXHQ reliable?

The price and inventory of TK33S10N1Z,LXHQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK33S10N1Z,LXHQ is usually 5 days.

3.What payment methods are accepted for TK33S10N1Z,LXHQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK33S10N1Z,LXHQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK33S10N1Z,LXHQ?

TK33S10N1Z,LXHQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK33S10N1Z,LXHQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK33S10N1Z,LXHQ?

For technical support, including TK33S10N1Z,LXHQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK33S10N1Z,LXHQ requirements.

6.How does Aetrix verify that TK33S10N1Z,LXHQ is sourced from the original manufacturer or authorized distributors?

All TK33S10N1Z,LXHQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK33S10N1Z,LXHQ meets industry standards.

7.What is the process for return or replacement of TK33S10N1Z,LXHQ?

All TK33S10N1Z,LXHQ units undergo pre-shipment inspection (PSI). If there is an issue with TK33S10N1Z,LXHQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK33S10N1Z,LXHQ part is unused and in its original packaging.

Return procedure for TK33S10N1Z,LXHQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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