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Toshiba Semiconductor and Storage TK34A10N1,S4X
- Part No.:
- TK34A10N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK34A10N1,S4X.pdf
- Description:
- MOSFET N-CH 100V 34A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:6,833
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Product details
Overview
TK34A10N1,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, rated for 100 V VDSS, 75 A ID (DC), and 7.9 mΩ RDS(ON) at VGS = 10 V, designed for high-efficiency switching voltage regulators in industrial DC-DC converters.
For engineers reviewing the TK34A10N1,S4X datasheet, TK34A10N1,S4X pinout, TK34A10N1,S4X application, or TK34A10N1,S4X equivalent, key selection criteria include avalanche energy rating (64 mJ), low gate charge (38 nC total), thermal resistance (3.57 °C/W channel-to-case), and TO-220SIS package suitability for forced-air or heatsink-cooled power stages.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low on-resistance while maintaining robust avalanche capability and fast switching performance. Its enhancement-mode threshold voltage (2.0–4.0 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.
Dynamic characteristics are optimized for hard-switched topologies: Ciss = 2600 pF, Crss = 23 pF, and Qgd = 9.7 nC enable low EMI and reduced switching losses. The integrated body diode exhibits trr = 61 ns and Qrr = 110 nC under specified conditions, supporting synchronous rectification and freewheeling roles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche; supports 48 V input systems with 2× safety margin. |
| RDS(ON) | 7.9 mΩ (typ.) at VGS = 10 V - Enables <1.3 W conduction loss at 34 A continuous drain current. |
| ID (DC) | 75 A at Tc = 25 °C - Requires heatsinking per Rth(ch-c) = 3.57 °C/W to maintain Tch ≤ 150 °C. |
| EAS | 64 mJ (single-pulse) - Withstands repetitive inductive switching stress in non-clamped flyback or buck converters. |
| Qg | 38 nC - Reduces gate driver power requirement and enables >100 kHz operation with moderate gate resistance. |
| tr/tf | 12 ns / 18 ns - Supports fast transition times critical for minimizing overlap loss in half-bridge configurations. |
| Tstg | −55 to +150 °C - Compatible with extended industrial ambient environments when mounted with thermal interface material. |
Pinout & Package
TK34A10N1,S4X is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package - a surface-mount-compatible variant of TO-220 with isolated source tab, enabling direct PCB mounting without insulating hardware while maintaining electrical isolation between drain and heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires <0.1 µA leakage current handling. |
| 2: Drain | High-side power terminal | Connected to input bus or inductive load node; electrically tied to metal tab for thermal path and high-current routing. |
| 3: Source | Low-side reference terminal | Serves as return path for load current and gate drive reference; isolated tab allows direct heatsink mounting without insulation. |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H trench process | Delivers 7.9 mΩ RDS(ON) in TO-220SIS footprint-enabling higher power density than planar predecessors. |
| Single-pulse avalanche rating | 64 mJ at Tch = 25 °C - Allows operation in unclamped inductive switching without external snubbers in many DC-DC designs. |
| Low Qgd/Qg ratio | 9.7 nC / 38 nC = 0.255 - Improves Miller immunity and reduces risk of false turn-on during high dV/dt transitions. |
| Body diode recovery | trr = 61 ns, Qrr = 110 nC - Enables use in synchronous rectifier positions where reverse recovery must be managed. |
| RoHS-compliant marking | Underlined Lot No. indicates [[G]]/RoHS COMPATIBLE version - meets EU Directive 2011/65/EU requirements. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage in 1U rack servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 34 A peak current. Use Value: 7.9 mΩ RDS(ON) minimizes conduction loss at high duty cycle; 38 nC Qg enables efficient gate driving with integrated DrMOS controllers. |
Use Scenario: 48 V to 12 V step-down converter in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched forward topology with 100 kHz switching frequency. Use Value: 100 V VDSS accommodates 48 V bus transients; 64 mJ EAS sustains reliability during output short-circuit events. |
| Telecom Rectifier Module | Motor Drive Half-Bridge |
Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier with >95% efficiency target. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in LLC resonant converter output stage. Use Value: Body diode trr = 61 ns and Qrr = 110 nC reduce switching loss and EMI vs. discrete diodes; TO-220SIS simplifies heatsink integration. |
Use Scenario: Low-voltage BLDC motor inverter (24–48 V) for HVAC fan control requiring compact, thermally robust switches. IC Role / Device Role / Timing Role: High-current leg switch in three-phase half-bridge, conducting up to 75 A DC with forced air cooling. Use Value: Rth(ch-c) = 3.57 °C/W enables stable operation at 75 A with modest heatsink; isolated source tab eliminates need for mica washers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDSS, 75 A ID, 10.5 mΩ RDS(ON), TO-220 package (non-isolated source) | Lacks isolated source tab; requires insulating hardware for heatsink mounting; lower VDSS limits 48 V transient tolerance. | Choose STP75NF75 only if board layout already uses standard TO-220 and thermal design accommodates added insulation. |
| IRF3205PBF | 55 V VDSS, 110 A ID, 8.0 mΩ RDS(ON), TO-220 package (non-isolated source) | Insufficient blocking voltage for 48 V systems with surge margins; higher ID rating unused in most 75 A designs. | IRF3205PBF is unsuitable for 48 V+ applications due to 55 V VDSS; consider only for legacy 24 V motor drives. |
Compared with STP75NF75 and IRF3205PBF, TK34A10N1,S4X uniquely combines 100 V rating, 7.9 mΩ on-resistance, and TO-220SIS isolation in a single device-enabling simplified thermal design and improved system-level surge resilience without sacrificing conduction efficiency.
Availability
TK34A10N1,S4X is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.
Supply support for TK34A10N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of expertise in discrete transistor design and manufacturing.
The TK34A10N1,S4X belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching applications in industrial and communications infrastructure where thermal robustness and avalanche tolerance are critical.
FAQ
What is the maximum continuous drain current rating for TK34A10N1,S4X at case temperature 100 °C?
The TK34A10N1,S4X has a DC drain current rating of 75 A at Tc = 25 °C. At Tc = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.13); the practical continuous current is approximately 42 A, based on linear derating using Rth(ch-c) = 3.57 °C/W and Tch limit of 150 °C. Always verify with actual thermal design for TK34A10N1,S4X.
Does TK34A10N1,S4X have a fully rated avalanche capability, and what test conditions apply?
Yes, TK34A10N1,S4X is rated for single-pulse avalanche energy of 64 mJ at Tch = 25 °C, tested under VDD = 80 V, L = 42.9 µH, and IAR = 34 A (Note 3). This rating is guaranteed per production test and supports unclamped inductive switching in properly designed circuits using TK34A10N1,S4X.
Can TK34A10N1,S4X be used as a direct replacement for standard TO-220 MOSFETs on the same PCB footprint?
No-TK34A10N1,S4X uses the TO-220SIS package, which has an electrically isolated source tab. While pinout (G-D-S) matches standard TO-220, the isolated tab requires different mounting: no insulator needed, but PCB copper must not short the tab to ground. Mechanical fit is identical, but thermal and electrical layout must be verified for TK34A10N1,S4X.
What is the typical gate threshold voltage range for TK34A10N1,S4X, and how does it affect drive circuit design?
The gate threshold voltage Vth for TK34A10N1,S4X is specified as 2.0–4.0 V (VDS = 10 V, ID = 0.5 mA). This range ensures reliable turn-on with 5 V logic drivers but mandates ≥10 V gate drive for full RDS(ON) specification. Drive circuits for TK34A10N1,S4X must supply sufficient voltage and current to charge 38 nC total gate charge within required switching times.
Is TK34A10N1,S4X RoHS compliant, and how is compliance indicated on the device marking?
Yes, TK34A10N1,S4X is RoHS compliant. Compliance is indicated by an underlined Lot Number on the device marking, signifying [[G]]/RoHS COMPATIBLE per Toshiba's labeling convention. Non-underlined markings indicate lead-containing versions. Always confirm RoHS status via Toshiba's official documentation or authorized distributor data for each TK34A10N1,S4X shipment.
TK34A10N1,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2600 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK34A10N1,S4X FAQ
1.How can I place an order for TK34A10N1,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK34A10N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK34A10N1,S4X reliable?
The price and inventory of TK34A10N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK34A10N1,S4X is usually 5 days.
3.What payment methods are accepted for TK34A10N1,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK34A10N1,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK34A10N1,S4X?
TK34A10N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK34A10N1,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK34A10N1,S4X?
For technical support, including TK34A10N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK34A10N1,S4X requirements.
6.How does Aetrix verify that TK34A10N1,S4X is sourced from the original manufacturer or authorized distributors?
All TK34A10N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK34A10N1,S4X meets industry standards.
7.What is the process for return or replacement of TK34A10N1,S4X?
All TK34A10N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK34A10N1,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK34A10N1,S4X part is unused and in its original packaging.
Return procedure for TK34A10N1,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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