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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK34E10N1,S1X

Name: TK34E10N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK34E10N1,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK34E10N1,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK34E10N1,S1X.pdf

Description:: MOSFET N-CH 100V 75A TO220

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Product details

Overview

TK34E10N1,S1X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 75 A DC drain current, 100 V drain-source breakdown voltage, and ultra-low 7.9 mΩ typ. R_DS(ON) at V_GS = 10 V, enabling high-efficiency operation in industrial power supplies.

For engineers reviewing the TK34E10N1,S1X datasheet, TK34E10N1,S1X pinout, TK34E10N1,S1X application, or TK34E10N1,S1X equivalent, key selection criteria include avalanche energy rating (64 mJ), thermal resistance (1.21 °C/W channel-to-case), gate charge (38 nC), and TO-220 package compatibility with heatsink mounting.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to achieve low conduction loss and fast switching. Its enhancement-mode threshold voltage (2.0–4.0 V) ensures reliable gate drive with standard logic-level controllers, while its 34 A pulsed drain current supports transient load handling in synchronous buck stages.

The device integrates an intrinsic body diode with 61 ns reverse recovery time and 110 nC reverse recovery charge, making it suitable for freewheeling applications where diode performance impacts efficiency and EMI. Its guaranteed single-pulse avalanche energy of 64 mJ enables robustness against inductive switching transients without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports input rails up to 48 V nominal systems with 2× safety margin against transients
R_DS(ON) (typ.)	7.9 mΩ @ V_GS = 10 V - Enables ≤0.5 W conduction loss at 20 A continuous current
I_D (DC)	75 A @ T_c = 25 °C - Requires heatsink to sustain full current; derates to ~34 A at T_c = 100 °C
Q_g	38 nC - Determines gate driver power requirement; compatible with common 1–2 A peak drivers
E_AS	64 mJ - Withstands inductive energy spikes in hard-switched topologies without failure
C_iss	2600 pF - Impacts turn-on delay and Miller plateau duration in high-frequency PWM designs
T_ch max	150 °C - Sets maximum junction temperature limit for thermal design and reliability modeling

Pinout & Package

TK34E10N1,S1X is housed in a standard TO-220 package (TOSHIBA designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink mounting. The package weighs 1.93 g and features creepage/clearance compliant with industrial isolation requirements.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥10 V drive for full enhancement; sensitive to ESD (±20 V max gate-source voltage)
2	Drain (heatsink)	Main high-side current path; electrically tied to metal tab-must be isolated from chassis unless referenced to system ground
3	Source	Reference node for gate drive; forms return path for load current; connects to PCB ground plane or low-side switch source

Key Features

Feature	Design Value
U-MOSⅧ-H trench process	Reduces R_DS(ON) × Q_g figure-of-merit by >25% vs. prior U-MOS generations, improving switching efficiency
Low leakage IDSS	≤10 µA at 100 V V_DS minimizes standby power loss in always-on power stages
Guaranteed avalanche capability	64 mJ single-pulse rating allows operation in non-clamped inductive circuits without external protection
Body diode with fast trr	61 ns reverse recovery time reduces diode conduction loss and associated EMI in synchronous rectification
Thermal resistance R_th(ch-c)	1.21 °C/W enables 75 A operation with ≤75 °C temperature rise above heatsink under forced convection

Applications

Server VRMs	Industrial Motor Drives
Use Scenario: High-density 48 V input buck converters delivering 100+ A to CPU/GPU cores. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase interleaved topology. Use Value: 7.9 mΩ R_DS(ON) cuts conduction loss by >30% vs. legacy 12 mΩ devices, reducing thermal load on VRM heatsinks.	Use Scenario: 3-phase inverter stage for 0.75–2.2 kW AC induction motors in PLC-controlled factory equipment. IC Role / Device Role / Timing Role: Low-side switching element handling 34 A pulsed current during PWM commutation. Use Value: 147 A pulsed drain rating and 64 mJ avalanche energy tolerate motor stall currents and regenerative spikes without failure.
Telecom Power Supplies	Renewable Energy Inverters
Use Scenario: 54 V input front-end DC-DC converter in 48 V telecom rectifiers with strict efficiency mandates (80 PLUS Titanium). IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: 38 nC total gate charge enables efficient drive with low-power gate drivers, minimizing control IC losses.	Use Scenario: DC link switching in string inverters converting solar array output (600–1000 V DC) to grid-synchronized AC. IC Role / Device Role / Timing Role: Freewheeling switch in boost-stage chopper circuits managing MPPT transients. Use Value: Body diode with 110 nC Q_rr and 61 ns t_rr lowers switching losses during light-load diode conduction periods.

Server VRMs

Industrial Motor Drives

Use Scenario: High-density 48 V input buck converters delivering 100+ A to CPU/GPU cores.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in multiphase interleaved topology.

Use Value: 7.9 mΩ R_DS(ON) cuts conduction loss by >30% vs. legacy 12 mΩ devices, reducing thermal load on VRM heatsinks.

Use Scenario: 3-phase inverter stage for 0.75–2.2 kW AC induction motors in PLC-controlled factory equipment.

IC Role / Device Role / Timing Role: Low-side switching element handling 34 A pulsed current during PWM commutation.

Use Value: 147 A pulsed drain rating and 64 mJ avalanche energy tolerate motor stall currents and regenerative spikes without failure.

Telecom Power Supplies

Renewable Energy Inverters

Use Scenario: 54 V input front-end DC-DC converter in 48 V telecom rectifiers with strict efficiency mandates (80 PLUS Titanium).

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 38 nC total gate charge enables efficient drive with low-power gate drivers, minimizing control IC losses.

Use Scenario: DC link switching in string inverters converting solar array output (600–1000 V DC) to grid-synchronized AC.

IC Role / Device Role / Timing Role: Freewheeling switch in boost-stage chopper circuits managing MPPT transients.

Use Value: Body diode with 110 nC Q_rr and 61 ns t_rr lowers switching losses during light-load diode conduction periods.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(ON) = 10.5 mΩ @ 10 V; higher Q_g (72 nC); same TO-220 package	Lower switching speed due to higher gate charge; less suitable for >150 kHz operation	Prefer TK34E10N1,S1X when efficiency at high frequency or low conduction loss dominates design priorities.
IRF3205	R_DS(ON) = 8.0 mΩ @ 10 V; lower avalanche rating (E_AS = 35 mJ); older TrenchFET process	Limited ruggedness in inductive switching; requires additional clamping in motor drive flyback paths	Choose TK34E10N1,S1X for applications demanding guaranteed avalanche robustness without circuit redesign.

Compared with STP75NF75 and IRF3205, TK34E10N1,S1X offers superior R_DS(ON) × Q_g trade-off, higher avalanche energy, and tighter V_th distribution-enabling more stable gate drive margins and reduced thermal derating in high-reliability industrial power stages.

Availability

TK34E10N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for TK34E10N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET innovation.

The TK34E10N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered for high-efficiency, high-current DC-DC conversion in industrial and computing infrastructure where low R_DS(ON) and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for TK34E10N1,S1X?

The TK34E10N1,S1X is rated for 75 A DC drain current at case temperature (T_c) of 25 °C. This rating assumes proper heatsinking; current must be derated linearly as case temperature rises, reaching approximately 34 A at T_c = 100 °C per the Safe Operating Area curve in the datasheet.

Does TK34E10N1,S1X have avalanche capability, and is it specified in the datasheet?

Yes, TK34E10N1,S1X specifies guaranteed single-pulse avalanche energy (E_AS) of 64 mJ at T_ch = 25 °C, with test conditions V_DD = 80 V, L = 42.9 µH, and I_AR = 34 A. This rating is production-tested and documented in Section 4 of the official Toshiba datasheet Rev. 4.0.A.

What is the gate threshold voltage range for TK34E10N1,S1X, and how does it affect drive requirements?

The TK34E10N1,S1X has a gate threshold voltage (V_th) range of 2.0 to 4.0 V at V_DS = 10 V and I_D = 0.5 mA. This ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers, while maintaining sufficient noise margin to prevent spurious conduction in noisy industrial environments.

Can TK34E10N1,S1X be used in surface-mount designs?

No, TK34E10N1,S1X is packaged exclusively in through-hole TO-220 (2-10X1A) format with a metal tab for heatsink mounting. It is not available in surface-mount variants such as DPAK or D2PAK; alternative packages would require selecting a different part number from Toshiba's portfolio.

What is the typical reverse recovery time (t_rr) of the body diode in TK34E10N1,S1X?

The typical reverse recovery time (t_rr) of the intrinsic body diode in TK34E10N1,S1X is 61 ns under test conditions of I_DR = 34 A, V_GS = 0 V, and –dI_DR/dt = 100 A/µs. This value is specified in Section 6.4 of the datasheet and supports efficient freewheeling in high-frequency switching applications.

TK34E10N1,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 103W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK34E10N1,S1X FAQ

1.How can I place an order for TK34E10N1,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK34E10N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK34E10N1,S1X reliable?

The price and inventory of TK34E10N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK34E10N1,S1X is usually 5 days.

3.What payment methods are accepted for TK34E10N1,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK34E10N1,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK34E10N1,S1X?

TK34E10N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK34E10N1,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK34E10N1,S1X?

For technical support, including TK34E10N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK34E10N1,S1X requirements.

6.How does Aetrix verify that TK34E10N1,S1X is sourced from the original manufacturer or authorized distributors?

All TK34E10N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK34E10N1,S1X meets industry standards.

7.What is the process for return or replacement of TK34E10N1,S1X?

All TK34E10N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK34E10N1,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK34E10N1,S1X part is unused and in its original packaging.

Return procedure for TK34E10N1,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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