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Toshiba Semiconductor and Storage TK35A08N1,S4X
- Part No.:
- TK35A08N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK35A08N1,S4X.pdf
- Description:
- MOSFET N-CH 80V 35A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:50
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Product details
Overview
TK35A08N1,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current, low-RDS(ON) switching element for DC-DC converters and motor drives. It delivers 55 A continuous drain current at Tc = 25°C, features 10.0 mΩ typical RDS(ON) at VGS = 10 V, and supports 80 V drain-source breakdown voltage - enabling efficient operation in 48 V industrial power rails.
For engineers reviewing the TK35A08N1,S4X datasheet, TK35A08N1,S4X pinout, TK35A08N1,S4X application, or TK35A08N1,S4X equivalent, key selection criteria include its TO-220SIS package thermal performance (Rth(ch-c) = 4.16°C/W), avalanche ruggedness (EAS = 38 mJ), and gate charge profile (Qg = 25 nC) for optimized hard-switching efficiency in synchronous rectification and PWM motor control.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate structure to minimize conduction and switching losses simultaneously. Its enhancement-mode threshold (Vth = 2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers, while the integrated body diode supports freewheeling in buck and half-bridge topologies without external diodes.
The device is characterized for single-pulse avalanche operation (IAR = 35 A, EAS = 38 mJ) and exhibits low Crss (18 pF) and Ciss (1700 pF) to reduce Miller-induced shoot-through risk. Thermal design must respect the 150°C channel temperature limit and derate power dissipation above Tc = 25°C per the guaranteed PD–Tc curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - Maximum blocking voltage compatible with 48 V nominal bus systems with 20% transient margin. |
| RDS(ON) (typ.) | 10.0 mΩ at VGS = 10 V - Enables <1.75 W conduction loss at 42 A DC, critical for high-efficiency VRMs. |
| ID (DC) | 55 A at Tc = 25°C - Supports high-current output stages in server PSUs and industrial motor controllers. |
| EAS | 38 mJ - Confirmed single-pulse avalanche energy rating allows safe operation during inductive load switching transients. |
| Qg | 25 nC - Total gate charge determines driver strength requirement; enables fast 28 ns turn-on with low-impedance gate drive. |
| Rth(ch-c) | 4.16°C/W - Low thermal resistance from channel to case enables direct heatsink mounting without thermal interface degradation. |
| Ciss | 1700 pF - Input capacitance impacts gate drive loop stability and switching loss in high-frequency (>100 kHz) applications. |
Pinout & Package
TK35A08N1,S4X is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with isolated tab - electrically insulated drain connection ideal for high-side switching and multi-phase layouts where thermal and electrical isolation are required. The package weighs 1.7 g and features standardized mounting hole spacing for mechanical compatibility with legacy TO-220 heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ≥10 V for full enhancement; sensitive to ESD (±20 V max gate-source rating). |
| 2 (Drain) | High-side power terminal | Connected to switched high-voltage rail; electrically isolated from package tab in TO-220SIS configuration. |
| 3 (Source) | Power return reference | Serves as local ground reference for gate drive; carries full load current and defines common-mode noise path. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) | 10.0 mΩ typ. at VGS = 10 V reduces I²R losses by >30% vs. prior-generation 80 V MOSFETs in same package. |
| Robust avalanche capability | 38 mJ single-pulse EAS rating eliminates need for external snubbers in inductive switching applications. |
| Low gate charge | 25 nC total gate charge minimizes driver power consumption and enables <35 ns turn-off time at 10 V drive. |
| Enhancement-mode threshold | Vth = 2.0–4.0 V ensures clean turn-on with standard logic-level or dedicated gate drivers without false triggering. |
| Integrated body diode | 52 ns reverse recovery time (trr) and 82 nC Qrr support synchronous rectification in buck converters up to 300 kHz. |
Applications
| Server Voltage Regulators | Industrial Motor Drives |
|---|---|
Use Scenario: High-density 48 V input VRMs supplying CPU/GPU core voltages in data center servers. IC Role / Device Role / Timing Role: Primary high-side switch in multiphase buck converter topology operating at 300–500 kHz. Use Value: 10.0 mΩ RDS(ON) and 4.16°C/W Rth(ch-c) enable >95% efficiency at 40 A per phase with minimal heatsink volume. |
Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in factory automation equipment. IC Role / Device Role / Timing Role: Low-side switching element handling continuous 35–50 A motor phase current with PWM commutation. Use Value: 35 A pulsed drain current rating and 38 mJ avalanche energy ensure robustness against back-EMF spikes during motor stall or reversal. |
| Telecom Power Supplies | Renewable Energy Inverters |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V telecom rectifiers delivering 100–200 A output. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve thermal margin. Use Value: Integrated body diode with 52 ns trr and low Qrr enables zero-voltage switching (ZVS) in LLC resonant converters. |
Use Scenario: DC link switching in string inverters converting solar PV array output (600–1000 V DC) to grid AC. IC Role / Device Role / Timing Role: High-current switch in boost pre-regulator stage stepping up PV voltage before H-bridge inversion. Use Value: 80 V VDSS and 55 A ID support high-efficiency MPPT tracking at ambient temperatures up to 85°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDSS, 55 A ID, 14 mΩ RDS(ON), TO-220FP package (non-isolated drain) | Limited to ≤48 V systems with tighter voltage margin; higher RDS(ON) increases conduction loss by ~40%. | Acceptable for cost-sensitive 24–48 V applications where avalanche rating is secondary and drain isolation is not required. |
| IRF3205PBF | 55 V VDSS, 110 A ID, 8.0 mΩ RDS(ON), TO-220AB package (non-isolated drain) | Lower voltage rating restricts use to ≤36 V systems; higher current rating but no avalanche energy spec provided. | Suitable for high-current, low-voltage motor drives where thermal management prioritizes RDS(ON) over voltage headroom. |
Compared with STP55NF06L and IRF3205PBF, TK35A08N1,S4X provides superior voltage margin (80 V), certified avalanche ruggedness (38 mJ), and electrically isolated drain - making it uniquely suited for high-reliability 48 V industrial and telecom power designs requiring both electrical safety and transient resilience.
Availability
TK35A08N1,S4X is available at Aetrix Electronics and suitable for server voltage regulators, industrial motor drives, and telecom power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for TK35A08N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon power MOSFET innovation.
TK35A08N1,S4X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET family, engineered specifically for high-current, high-frequency switching applications in industrial power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for TK35A08N1,S4X?
The TK35A08N1,S4X is rated for 55 A continuous drain current (ID) at case temperature Tc = 25°C. This rating decreases with rising case temperature per the guaranteed PD–Tc derating curve, reaching approximately 35 A at Tc = 100°C. Designers must ensure heatsinking maintains Tc within limits to sustain full current capability.
Does TK35A08N1,S4X have an electrically isolated drain terminal?
Yes, TK35A08N1,S4X uses the TO-220SIS package, which features an electrically isolated drain tab - meaning the metal tab (pin 2) is not internally connected to the drain lead frame. This enables safe high-side mounting on grounded heatsinks without short-circuit risk, a key advantage over standard TO-220AB packages.
What is the gate threshold voltage range for TK35A08N1,S4X?
The TK35A08N1,S4X has a gate threshold voltage (Vth) range of 2.0 V to 4.0 V, measured at VDS = 10 V and ID = 0.3 mA. This enhancement-mode specification ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while preventing accidental activation from noise or leakage currents.
Is TK35A08N1,S4X suitable for avalanche-prone circuits like inductive load switching?
Yes, TK35A08N1,S4X is fully characterized for single-pulse avalanche operation with EAS = 38 mJ at Tch = 25°C (VDD = 64 V, L = 24.1 µH, IAR = 35 A). This validated ruggedness allows safe use in relay drivers, solenoid controls, and motor H-bridges without external clamping components.
What is the typical reverse recovery time of the body diode in TK35A08N1,S4X?
The TK35A08N1,S4X body diode has a typical reverse recovery time (trr) of 52 ns under test conditions of IDR = 35 A, VGS = 0 V, and –dIDR/dt = 100 A/µs. This fast recovery supports high-frequency synchronous rectification in buck and LLC converters up to 500 kHz without excessive switching loss.
TK35A08N1,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 12.2mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK35A08N1,S4X FAQ
1.How can I place an order for TK35A08N1,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK35A08N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK35A08N1,S4X reliable?
The price and inventory of TK35A08N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK35A08N1,S4X is usually 5 days.
3.What payment methods are accepted for TK35A08N1,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK35A08N1,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK35A08N1,S4X?
TK35A08N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK35A08N1,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK35A08N1,S4X?
For technical support, including TK35A08N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK35A08N1,S4X requirements.
6.How does Aetrix verify that TK35A08N1,S4X is sourced from the original manufacturer or authorized distributors?
All TK35A08N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK35A08N1,S4X meets industry standards.
7.What is the process for return or replacement of TK35A08N1,S4X?
All TK35A08N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK35A08N1,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK35A08N1,S4X part is unused and in its original packaging.
Return procedure for TK35A08N1,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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