Toshiba Semiconductor and Storage TK35A65W,S5X

Overview

TK35A65W,S5X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 35 A continuous drain current, 650 V drain-source breakdown voltage, and ultra-low R_DS(ON) of 0.068 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in 65–100 W server PSUs and industrial SMPS.

For engineers reviewing the TK35A65W,S5X datasheet, TK35A65W,S5X pinout, TK35A65W,S5X application, or TK35A65W,S5X equivalent, key selection criteria include its TO-220SIS package with isolated source terminal, avalanche ruggedness (E_AS = 614 mJ), gate threshold voltage range (2.5–3.5 V), and diode reverse recovery performance (t_rr = 430 ns, Q_rr = 4.2 µC).

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching and robust dv/dt immunity (≥50 V/ns). Its enhancement-mode operation with tightly controlled V_th ensures reliable turn-on under standard 10 V gate drive and compatibility with common PWM controllers.

The integrated body diode exhibits soft reverse recovery (I_rr = 21 A, t_rr = 430 ns) and high dv/dt ruggedness (≥15 V/ns), making it suitable for hard-switched PFC and resonant LLC topologies where diode commutation stress is critical. Thermal resistance R_th(ch-c) = 2.5 °C/W supports high-power density designs when mounted on heatsinks.

Key Specifications

Pinout & Package

TK35A65W,S5X is housed in a TO-220SIS (JEITA SC-67) package with internal source isolation-enabling direct mounting to heatsinks without insulating pads while maintaining electrical isolation between drain and heatsink. The package weighs 1.7 g and features screw-mount compatibility (0.6 N·m torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP35N65M2 and IPP65R190C7, the TK35A65W,S5X uniquely combines source-isolated TO-220SIS packaging, soft-recovery diode, and industry-leading R_DS(ON) for cost-sensitive, thermally constrained 65–150 W industrial and server power designs.

Availability

TK35A65W,S5X is available at Aetrix Electronics and suitable for server power supplies, industrial SMPS, LED drivers, and EV charger auxiliary supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK35A65W,S5X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in silicon power MOSFETs and IGBTs since the 1970s.

The TK35A65W,S5X belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, computing, and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK35A65W,S5X?

The TK35A65W,S5X has a maximum continuous drain current (I_D) of 35 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature below 150 °C. At elevated case temperatures, derating applies per the datasheet's PD–T_c curve-e.g., 25 A at T_c = 80 °C. The device also supports pulsed drain current up to 140 A for short durations.

Does TK35A65W,S5X have an integrated body diode, and what are its key recovery characteristics?

Yes, the TK35A65W,S5X includes an integrated N-channel body diode with soft reverse recovery behavior. Key parameters include reverse recovery time (t_rr) of 430 ns, reverse recovery charge (Q_rr) of 4.2 µC, and peak reverse recovery current (I_rr) of 21 A, all measured at I_DR = 17.5 A, V_DD = 400 V, and –dI_DR/dt = 50 A/µs. These values enable low-loss commutation in hard-switched topologies.

What is the gate threshold voltage range for TK35A65W,S5X, and how does it affect drive requirements?

The TK35A65W,S5X has a gate threshold voltage (V_th) range of 2.5 V to 3.5 V, specified at V_DS = 10 V and I_D = 2.1 mA. This enhancement-mode characteristic ensures reliable turn-on with standard 5 V or 10 V gate drivers, eliminating need for negative bias. The tight V_th distribution improves current sharing in parallel configurations and reduces risk of partial turn-on during startup.

How does the TO-220SIS package of TK35A65W,S5X differ from standard TO-220 in thermal and electrical terms?

The TO-220SIS package used by TK35A65W,S5X features an electrically isolated source terminal-meaning the metal tab (drain-connected) is fully insulated from the source lead. This allows direct mounting to grounded heatsinks without insulating hardware, reducing thermal resistance by ~0.5 °C/W versus insulated TO-220 variants. It maintains identical mechanical footprint and mounting torque (0.6 N·m) as JEITA SC-67 standard.

Is TK35A65W,S5X suitable for avalanche-prone applications such as PFC circuits with high inductive energy?

Yes, the TK35A65W,S5X is fully rated for single-pulse avalanche operation with guaranteed E_AS = 614 mJ at T_ch = 25 °C. This capability makes it suitable for boost PFC stages where inductor energy must be safely clamped during overvoltage events or controller faults. Avalanche testing follows JEDEC JESD24-11 methodology, and operation within the SOA curve ensures reliability without degradation.