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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK35N65W,S1F

Name: TK35N65W,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK35N65W,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK35N65W,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK35N65W,S1F.pdf

Description:: MOSFET N-CH 650V 35A TO247

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Product details

Overview

TK35N65W,S1F from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and industrial DC-DC converters. It delivers 650 V V_DSS, 35 A I_D (DC), R_DS(ON) = 0.068 Ω (typ.), and operates with V_th = 2.5–3.5 V - enabling efficient, gate-drive-simple operation in 400 V bus PFC and SMPS stages.

For engineers reviewing the TK35N65W,S1F datasheet, TK35N65W,S1F pinout, TK35N65W,S1F application, or TK35N65W,S1F equivalent, key selection considerations include its TO-247 package thermal performance (R_th(ch-c) = 0.463 °C/W), avalanche ruggedness (E_AS = 614 mJ), and DTMOS™-enabled low conduction loss at high voltage.

Technical Context

This device implements Toshiba's DTMOS™ (Double-diffused Super Junction) structure to achieve low R_DS(ON) without sacrificing switching speed or avalanche robustness. Its enhancement-mode gate threshold (2.5–3.5 V) ensures compatibility with standard 10 V gate drivers and enables clean turn-on under wide input voltage conditions.

The TK35N65W,S1F integrates a fast-recovery body diode (t_rr = 430 ns, Q_rr = 4.2 µC) and exhibits strong dv/dt ruggedness (≥50 V/ns), making it suitable for hard-switched topologies where commutation stress and reverse recovery are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V AC-input rectified bus with 50% safety margin for surge and transient handling
R_DS(ON)	0.068 Ω (typ.) - reduces conduction loss to ≤12 W at 35 A, enabling high-efficiency 1–3 kW designs
I_D (DC)	35 A - rated for continuous operation at T_c = 25 °C; derates to ~19 A at T_c = 100 °C
E_AS	614 mJ - withstands single-pulse inductive energy without failure in flyback or LLC resonant circuits
t_r/t_f	30 ns / 8 ns - enables <100 kHz hard-switching with minimal switching loss and EMI generation
Q_g	100 nC - requires ~1 W average gate drive power at 100 kHz, compatible with standard MOSFET drivers
V_th	2.5–3.5 V - ensures reliable turn-on with 5 V logic-level signals and stable immunity to noise-induced false triggering

Pinout & Package

TK35N65W,S1F uses the TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated heatsink-connected drain tab. The case temperature rating (T_c) assumes mounting to a heatsink via M3 screw (torque: 0.8 N·m).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; low input capacitance (C_iss = 4100 pF) minimizes driver loading
2 (Drain)	High-side power terminal	Electrically connected to heatsink; must be isolated from PCB ground unless using floating heatsink design
3 (Source)	Power return and reference node	Serves as local ground reference for gate drive; source inductance must be minimized to avoid oscillation

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Enables 650 V rating with R_DS(ON) 35% lower than planar MOSFETs of same die size, improving power density
Enhancement-mode Gate Threshold	V_th = 2.5–3.5 V ensures predictable turn-on with industry-standard 10 V gate drivers and avoids accidental activation during startup
Fast Body Diode Recovery	t_rr = 430 ns and Q_rr = 4.2 µC reduce switching loss and voltage overshoot in bridge-leg and synchronous rectifier configurations
Avalanche-Rated Operation	Guaranteed E_AS = 614 mJ allows safe operation in inductive load switching without external snubbers in many applications
High dv/dt Immunity	Rated ≥50 V/ns - prevents spurious turn-on during high-slew-rate switching transitions in high-frequency converters

Applications

Server PSU Primary Switch	Industrial Motor Drive Inverter
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 400 V DC bus with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Main switch in primary-side power stage, conducting 35 A peak current at 100–300 kHz. Use Value: Low R_DS(ON) cuts conduction loss by >2 W vs. legacy 650 V MOSFETs, directly improving full-load efficiency by 0.3–0.5%.	Use Scenario: 3-phase inverter driving 5–7.5 kW induction motors in CNC machinery or pumps. IC Role / Device Role / Timing Role: Upper-leg switching device in IGBT replacement configuration, operating at ≤20 kHz with forced-air cooling. Use Value: Avalanche ruggedness and fast body diode enable direct IGBT substitution without adding freewheeling diodes or snubbers.
Solar Microinverter DC-DC Stage	EV Onboard Charger PFC
Use Scenario: Isolated DC-DC converter in residential solar microinverter, stepping up PV string voltage (60–150 V) to 400 V DC link. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, handling 25 A RMS current. Use Value: Low gate charge (Q_g = 100 nC) and optimized C_oss reduce driver losses and improve ZVS behavior across wide load range.	Use Scenario: Boost-type Power Factor Correction stage in 6.6 kW EV onboard charger, operating from 90–265 V AC input. IC Role / Device Role / Timing Role: High-side boost switch in continuous conduction mode (CCM), switching at 65–100 kHz. Use Value: R_DS(ON) stability over temperature (R_th(ch-a) = 50 °C/W) maintains consistent efficiency across ambient temperatures from –40 °C to +85 °C.

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 400 V DC bus with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Main switch in primary-side power stage, conducting 35 A peak current at 100–300 kHz.

Use Value: Low R_DS(ON) cuts conduction loss by >2 W vs. legacy 650 V MOSFETs, directly improving full-load efficiency by 0.3–0.5%.

Use Scenario: 3-phase inverter driving 5–7.5 kW induction motors in CNC machinery or pumps.

IC Role / Device Role / Timing Role: Upper-leg switching device in IGBT replacement configuration, operating at ≤20 kHz with forced-air cooling.

Use Value: Avalanche ruggedness and fast body diode enable direct IGBT substitution without adding freewheeling diodes or snubbers.

Solar Microinverter DC-DC Stage

EV Onboard Charger PFC

Use Scenario: Isolated DC-DC converter in residential solar microinverter, stepping up PV string voltage (60–150 V) to 400 V DC link.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, handling 25 A RMS current.

Use Value: Low gate charge (Q_g = 100 nC) and optimized C_oss reduce driver losses and improve ZVS behavior across wide load range.

Use Scenario: Boost-type Power Factor Correction stage in 6.6 kW EV onboard charger, operating from 90–265 V AC input.

IC Role / Device Role / Timing Role: High-side boost switch in continuous conduction mode (CCM), switching at 65–100 kHz.

Use Value: R_DS(ON) stability over temperature (R_th(ch-a) = 50 °C/W) maintains consistent efficiency across ambient temperatures from –40 °C to +85 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW35N65M5	R_DS(ON) = 0.075 Ω (typ.), Q_g = 85 nC, TO-247 package	Lower gate charge improves switching efficiency at >150 kHz but higher R_DS(ON) increases conduction loss above 20 A	Prefer STW35N65M5 for high-frequency PFC where switching loss dominates; TK35N65W,S1F better for high-current/low-frequency motor drives
IXTH35N65X2	R_DS(ON) = 0.062 Ω (typ.), E_AS = 520 mJ, TO-247 package	Lower R_DS(ON) improves conduction loss, but reduced avalanche energy limits use in unclamped inductive loads	Select IXTH35N65X2 only when circuit includes robust clamping; TK35N65W,S1F preferred for ruggedness-critical industrial inverters

Compared with STW35N65M5 and IXTH35N65X2, TK35N65W,S1F offers the best balance of low R_DS(ON), high E_AS, and proven thermal robustness in TO-247 - making it optimal for industrial SMPS and motor drives where reliability under overload is mandatory.

Availability

TK35N65W,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK35N65W,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with deep expertise in silicon power MOSFETs and IGBTs.

The TK35N65W,S1F belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability 650 V switching applications in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current for TK35N65W,S1F at case temperature of 100 °C?

The TK35N65W,S1F has a DC drain current rating of 35 A at T_c = 25 °C. At T_c = 100 °C, the absolute maximum rating drops to approximately 19 A due to thermal derating per the Safe Operating Area curve (Fig. 8.17). This value is confirmed in the datasheet's "Absolute Maximum Ratings" table and validated by the R_th(ch-c) = 0.463 °C/W thermal resistance specification.

Does TK35N65W,S1F have a built-in body diode, and what are its key recovery characteristics?

Yes, TK35N65W,S1F includes an integrated body diode. Its reverse recovery time t_rr is 430 ns (typ.) with Q_rr = 4.2 µC and peak reverse recovery current I_rr = 21 A, measured at I_DR = 17.5 A and dI_DR/dt = 50 A/µs. These values are specified in Section 6.4 of the official Toshiba datasheet and confirm suitability for hard-switched bridge configurations.

Is TK35N65W,S1F RoHS compliant and lead-free?

Yes, TK35N65W,S1F is RoHS compliant. Per Toshiba's marking note (Section 7), underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. The device meets Directive 2011/65/EU and contains no restricted substances above allowable thresholds. Full compliance documentation is available through Toshiba's environmental reports.

What is the gate threshold voltage range for TK35N65W,S1F, and how does it affect drive circuit design?

The gate threshold voltage V_th for TK35N65W,S1F is 2.5–3.5 V (measured at V_DS = 10 V, I_D = 2.1 mA). This range ensures reliable turn-on with 5 V logic-level drivers while providing noise immunity against false triggering. Designers should apply ≥10 V gate drive to achieve full R_DS(ON) and minimize on-state loss, as confirmed in the "Electrical Characteristics" table (Section 6.1).

Can TK35N65W,S1F replace older 600 V MOSFETs like TK30S06N1 in existing designs?

TK35N65W,S1F is not a direct drop-in replacement for TK30S06N1 due to differences in voltage rating (650 V vs. 600 V), R_DS(ON) (0.068 Ω vs. 0.055 Ω), and gate charge (100 nC vs. 75 nC). While both use TO-247, layout review is required to verify gate drive capability, thermal interface, and avalanche margin. The TK35N65W,S1F datasheet does not claim pin-to-pin compatibility with TK30S06N1.

TK35N65W,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 2.1mA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 270W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK35N65W,S1F FAQ

1.How can I place an order for TK35N65W,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK35N65W,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK35N65W,S1F reliable?

The price and inventory of TK35N65W,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK35N65W,S1F is usually 5 days.

3.What payment methods are accepted for TK35N65W,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK35N65W,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK35N65W,S1F?

TK35N65W,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK35N65W,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK35N65W,S1F?

For technical support, including TK35N65W,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK35N65W,S1F requirements.

6.How does Aetrix verify that TK35N65W,S1F is sourced from the original manufacturer or authorized distributors?

All TK35N65W,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK35N65W,S1F meets industry standards.

7.What is the process for return or replacement of TK35N65W,S1F?

All TK35N65W,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK35N65W,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK35N65W,S1F part is unused and in its original packaging.

Return procedure for TK35N65W,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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