Toshiba Semiconductor and Storage TK380A60Y,S4X

Overview

TK380A60Y from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel MOSFET using DTMOS™ Super Junction technology, designed for high-voltage switching in offline power supplies. It delivers 600 V V_DSS, 9.7 A continuous drain current (T_c = 25 °C), and low R_DS(ON) of 0.29 Ω (typ.) at V_GS = 10 V - enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK380A60Y datasheet, TK380A60Y pinout, TK380A60Y application, or TK380A60Y equivalent, key selection criteria include its TO-220SIS package with isolated tab, avalanche ruggedness (E_AS = 104 mJ), gate threshold voltage range (3–4 V), and diode reverse recovery performance (t_rr = 240 ns, Q_rr = 2 µC).

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with optimized super junction cell structure to achieve low conduction loss while maintaining fast switching and robust dv/dt immunity (≥50 V/ns). Its enhancement-mode operation and 3–4 V V_th ensure compatibility with standard 5 V and 3.3 V gate drivers.

Thermal design is supported by a channel-to-case thermal resistance of 4.16 °C/W and an isolated package rated for 2000 V_RMS insulation, making it suitable for grounded-source topologies where primary-side isolation is required without additional creepage/clearance measures.

Key Specifications

Pinout & Package

TK380A60Y uses the TO-220SIS (JEITA SC-67) package with electrically isolated metal tab - enabling direct mounting to heatsink without insulator, reducing thermal resistance and assembly cost. Weight: 1.7 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP10NK60ZFP and IPP60R099C7, the TK380A60Y offers optimal balance of isolation, ruggedness, and mid-power efficiency - uniquely suited for cost-sensitive, space-constrained 15–65 W offline supplies where mechanical simplicity and surge tolerance are prioritized over ultra-low R_DS(ON).

Availability

TK380A60Y is available at Aetrix Electronics and suitable for AC-DC adapters, industrial LED drivers, and server auxiliary power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK380A60Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power MOSFETs and IGBTs.

The TK380A60Y belongs to Toshiba's DTMOS™ IV Super Junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 600 V.

FAQ

What is the maximum continuous drain current rating for TK380A60Y at 100 °C case temperature?

The TK380A60Y supports 6.1 A continuous drain current (I_D) at T_c = 100 °C - a derated value reflecting thermal limits under sustained high-temperature operation. This rating ensures safe conduction in enclosed environments where heatsink temperature reaches 100 °C, and must be used with the specified R_th(ch-c) = 4.16 °C/W to calculate channel temperature.

Does TK380A60Y have an integrated body diode, and what are its key recovery characteristics?

Yes, the TK380A60Y includes a monolithic body diode with reverse recovery time (t_rr) of 240 ns and reverse recovery charge (Q_rr) of 2 µC at T_a = 25 °C. These values are measured under IDR = 4.6 A, dI_DR/dt = 100 A/µs, and V_DD ≈ 400 V - confirming suitability for quasi-resonant and discontinuous conduction mode flyback converters where diode switching loss impacts efficiency and EMI.

What is the gate threshold voltage range for TK380A60Y, and how does it affect drive compatibility?

The TK380A60Y has a gate threshold voltage (V_th) range of 3–4 V at V_DS = 10 V and I_D = 0.36 mA. This enhancement-mode specification ensures reliable turn-on with standard 5 V microcontroller GPIO or dedicated gate drivers, while providing noise margin against false triggering in noisy industrial environments - a critical factor in stable operation of the TK380A60Y.

Can TK380A60Y be used in avalanche mode, and what is its single-pulse energy rating?

Yes, the TK380A60Y is fully rated for single-pulse avalanche operation with E_AS = 104 mJ at T_ch = 25 °C. This rating is validated per JEDEC JESD24-11 and applies under conditions of V_DD = 90 V, L = 29.2 mH, R_G = 25 Ω, and I_AS = 2.5 A. Designers may rely on this specification for unclamped inductive switching in cost-optimized TK380A60Y-based PFC or flyback circuits.

What package type does TK380A60Y use, and how does its isolation rating impact PCB layout?

The TK380A60Y uses the TO-220SIS package (JEITA SC-67), featuring an electrically isolated metal tab rated for 2000 V_RMS. This eliminates the need for insulating pads or shoulder washers when mounting to a grounded heatsink - simplifying thermal design, reducing assembly steps, and improving long-term reliability compared to standard TO-220 variants. The isolation directly affects PCB layout by allowing direct connection of the drain (pin 2) to high-voltage traces without creepage concerns across the tab.