Toshiba Semiconductor and Storage TK380A65Y,S4X

Overview

TK380A65Y from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It features 650 V V_DSS, 0.29 Ω R_DS(ON) (typ.), 9.7 A I_D (DC), TO-220SIS package, and operates up to 150 °C channel temperature - optimized for AC-DC adapters and industrial SMPS.

For engineers reviewing the TK380A65Y datasheet, TK380A65Y pinout, TK380A65Y application, or TK380A65Y equivalent, key selection criteria include avalanche energy rating (96 mJ), gate threshold voltage range (3–4 V), dv/dt ruggedness (≥50 V/ns), and thermal resistance (R_th(ch-c) = 4.16 °C/W) for reliable high-frequency hard-switching operation.

Technical Context

The TK380A65Y implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (V_th = 3–4 V at V_DS = 10 V, I_D = 0.36 mA) enables direct drive from standard 5 V or 3.3 V controllers without level-shifting.

Dynamic characteristics include C_iss = 590 pF, Q_g = 20 nC, and t_on/t_off of 60 ns/150 ns under defined test conditions (V_DD ≈ 400 V, R_G = 10 Ω), supporting efficient operation in 65–100 kHz flyback and LLC resonant converters.

Key Specifications

Pinout & Package

TK380A65Y is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with internal isolation - rated for 2000 V_RMS isolation voltage and 0.6 N·m mounting torque. The package features a fully isolated drain tab for simplified heatsinking without insulating hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP10NK65ZFP and IXTH10N65X2, the TK380A65Y delivers superior conduction efficiency (0.29 Ω), integrated 2000 V_RMS isolation, and lower Q_g, making it optimal for space-constrained, thermally sensitive 60–120 W industrial and lighting power supplies where board-level isolation simplifies compliance and assembly.

Availability

TK380A65Y is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver primary switches, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK380A65Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability power MOSFET technology.

The TK380A65Y belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in compact offline power converters targeting industrial, lighting, and telecom infrastructure.

FAQ

What is the maximum continuous drain current for TK380A65Y at 100 °C case temperature?

The TK380A65Y supports 6.1 A I_D (DC) at T_c = 100 °C, as specified in its Absolute Maximum Ratings table. This derated current reflects thermal limits under real-world heatsink conditions and must be verified against actual PCB layout, airflow, and ambient temperature in the final design. The TK380A65Y datasheet defines this value with test condition T_c = 100 °C, not ambient.

Does TK380A65Y have an isolated package, and what is its isolation rating?

Yes, the TK380A65Y uses the TO-220SIS package with reinforced electrical isolation between the drain terminal and the mounting surface. Its isolation voltage rating is 2000 V_RMS, verified per safety standards, eliminating the need for insulating pads or sleeves when mounted directly to a heatsink. This isolation is integral to the TK380A65Y package construction and is explicitly stated in the Package Dimensions section.

What is the typical gate threshold voltage range for TK380A65Y, and how does it affect controller compatibility?

The TK380A65Y has a gate threshold voltage (V_th) of 3–4 V, measured at V_DS = 10 V and I_D = 0.36 mA. This enhancement-mode range ensures reliable turn-on with standard 5 V or 3.3 V PWM controllers and eliminates risk of unintended conduction due to noise. The TK380A65Y does not require negative gate bias for secure turn-off, simplifying gate driver design.

Can TK380A65Y be used in avalanche-rated applications, and what is its single-pulse energy rating?

Yes, the TK380A65Y is characterized for single-pulse avalanche operation with E_AS = 96 mJ at T_ch = 25 °C, tested under defined conditions (V_DD = 90 V, L = 27.2 mH, R_G = 25 Ω, I_AS = 2.5 A). This rating supports unclamped inductive switching in flyback and forward converters. Designers must ensure channel temperature remains within 150 °C during avalanche events, as confirmed in the TK380A65Y datasheet Section 4.

What is the typical reverse recovery time (t_rr) of the body diode in TK380A65Y, and how is it measured?

The TK380A65Y body diode exhibits t_rr = 240 ns (typ.), measured at I_DR = 9.7 A, V_GS = 0 V, and -dI_DR/dt = 100 A/µs, per Section 6.4 of the TK380A65Y datasheet. This parameter enables predictable commutation behavior in quasi-resonant and ZVS topologies, and is supported by Q_rr = 2 µC and I_rr = 17.5 A peak values under identical conditions.