Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK380P60Y,RQ

Name: TK380P60Y,RQ
Brand: Toshiba Semiconductor and Storage
SKU: TK380P60Y,RQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TK380P60Y,RQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TK380P60Y,RQ.pdf

Description:: MOSFET N-CHANNEL 600V 9.7A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TK380P60Y from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using DTMOS™ Super Junction technology, designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 600 V V_DSS, 9.7 A I_D (DC), R_DS(ON) = 0.29 Ω (typ.) at V_GS = 10 V, and operates up to T_ch = 150 °C.

For engineers reviewing the TK380P60Y datasheet, TK380P60Y pinout, TK380P60Y application, or TK380P60Y equivalent, this device is evaluated for high-efficiency flyback and PFC stage designs requiring low conduction loss, robust avalanche capability (E_AS = 104 mJ), and stable gate drive with V_th = 3–4 V.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with a super junction structure to achieve low R_DS(ON) while maintaining high breakdown voltage and fast switching performance. Its gate threshold voltage (3–4 V) enables direct drive from standard 5 V or 3.3 V controllers without level-shifting.

It features integrated body diode with t_rr = 240 ns (typ.), Q_rr = 2 µC (typ.), and dv/dt ruggedness ≥15 V/ns - enabling reliable operation in hard-switched topologies. Thermal resistance R_th(ch-c) = 1.56 °C/W supports high-power density layouts when mounted on copper-clad PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input offline SMPS (85–265 VAC) with margin for surge and ringing
R_DS(ON)	0.29 Ω (typ.) at V_GS = 10 V - reduces conduction loss in primary-side switching, improving efficiency at full load
I_D (DC)	9.7 A at T_c = 25 °C - suitable for 100–150 W continuous-output flyback or 200 W peak PFC stages
E_AS	104 mJ - withstands single-pulse avalanche stress during overvoltage transients without failure
Q_g	20 nC (typ.) - enables fast turn-on with moderate gate driver strength (e.g., 1–2 A peak)
C_iss	590 pF - balances switching speed and EMI control in 65–130 kHz SMPS designs
V_th	3–4 V - compatible with standard PWM IC outputs; avoids unintended turn-on near 0 V

Pinout & Package

TK380P60Y is housed in a surface-mount DPAK (TOSHIBA 2-7K1S) package with exposed drain pad for thermal enhancement. The package weighs 0.36 g and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control terminal	Receives gate drive signal; requires <1 µA leakage (I_GSS) and tolerates ±30 V V_GSS
2: Drain	High-voltage output node	Connected to transformer primary or bus rail; carries full switching current and avalanche energy
3: Source	Reference/return path	Serves as local ground reference for gate drive; ties to power ground plane with low-inductance layout

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Enables 600 V rating with 0.29 Ω R_DS(ON), reducing conduction loss by ~35% vs. planar MOSFETs at same voltage class
Enhancement-mode V_th	3–4 V ensures reliable turn-off at 0 V gate bias and compatibility with 3.3 V/5 V logic-level drivers
Low Q_gd/Q_g ratio	Q_gd = 10.5 nC of total Q_g = 20 nC - improves Miller immunity and enables stable operation under high dv/dt
Body diode soft recovery	t_rr = 240 ns, Q_rr = 2 µC - minimizes switching loss and voltage overshoot in discontinuous conduction mode (DCM) flyback
Avalanche-rated	Guaranteed single-pulse E_AS = 104 mJ - eliminates need for external snubbers in many clamp-free designs

Applications

Industrial SMPS	LED Driver Power Stage
Use Scenario: Primary-side switch in 100–150 W open-frame industrial power supplies operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-voltage switching element in flyback topology, handling 600 V bus and delivering regulated DC output. Use Value: Low R_DS(ON) and high E_AS reduce heatsink size and improve reliability under line surges and startup stress.	Use Scenario: Constant-current switching regulator for high-bay LED luminaires with universal AC input. IC Role / Device Role / Timing Role: Primary-side MOSFET in isolated buck-boost or flyback LED driver controlling average output current. Use Value: Stable V_th and low gate charge enable precise dimming control and low standby power via burst-mode operation.
Server PSU Front-End	Appliance PFC Circuit
Use Scenario: Boost switch in active PFC stage of 300–500 W server power supply meeting 80 PLUS Titanium requirements. IC Role / Device Role / Timing Role: Fast-switching, high-voltage boost transistor operating at 65–130 kHz with critical conduction mode (CrM). Use Value: Low C_iss and optimized Q_g minimize switching loss while maintaining EMI compliance across wide load range.	Use Scenario: Input rectification and boost switching in Class D audio amplifier or induction cooker auxiliary power supply. IC Role / Device Role / Timing Role: High-reliability switching element in compact, thermally constrained appliance PFC modules. Use Value: R_th(ch-c) = 1.56 °C/W allows direct mounting to metal chassis, eliminating dedicated heatsinks in space-limited enclosures.

Industrial SMPS

LED Driver Power Stage

Use Scenario: Primary-side switch in 100–150 W open-frame industrial power supplies operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element in flyback topology, handling 600 V bus and delivering regulated DC output.

Use Value: Low R_DS(ON) and high E_AS reduce heatsink size and improve reliability under line surges and startup stress.

Use Scenario: Constant-current switching regulator for high-bay LED luminaires with universal AC input.

IC Role / Device Role / Timing Role: Primary-side MOSFET in isolated buck-boost or flyback LED driver controlling average output current.

Use Value: Stable V_th and low gate charge enable precise dimming control and low standby power via burst-mode operation.

Server PSU Front-End

Appliance PFC Circuit

Use Scenario: Boost switch in active PFC stage of 300–500 W server power supply meeting 80 PLUS Titanium requirements.

IC Role / Device Role / Timing Role: Fast-switching, high-voltage boost transistor operating at 65–130 kHz with critical conduction mode (CrM).

Use Value: Low C_iss and optimized Q_g minimize switching loss while maintaining EMI compliance across wide load range.

Use Scenario: Input rectification and boost switching in Class D audio amplifier or induction cooker auxiliary power supply.

IC Role / Device Role / Timing Role: High-reliability switching element in compact, thermally constrained appliance PFC modules.

Use Value: R_th(ch-c) = 1.56 °C/W allows direct mounting to metal chassis, eliminating dedicated heatsinks in space-limited enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	R_DS(ON) = 0.75 Ω (typ.), higher conduction loss; E_AS = 50 mJ; TO-220FP package	Larger footprint and lower avalanche robustness limit use in high-surge environments	Lower-cost option where thermal margin and transient immunity are less critical
IPP60R099C7	R_DS(ON) = 0.099 Ω (typ.), 650 V rating; 110 nC Q_g; TO-220 package; CoolMOS™ C7	Higher gate charge increases driver complexity; superior efficiency at >200 W but over-spec for 150 W designs	Better suited for high-density, high-efficiency server PSUs where layout space permits larger gate driver

Compared with STP6NK60ZFP and IPP60R099C7, TK380P60Y offers optimal balance of low R_DS(ON), moderate Q_g, and proven avalanche ruggedness in DPAK - making it ideal for cost-sensitive, thermally constrained 100–150 W industrial and lighting applications without requiring gate driver upgrades.

Availability

TK380P60Y is available at Aetrix Electronics and suitable for industrial SMPS, LED driver power stages, server PSU front-end circuits, and appliance PFC modules requiring stable component supply and long-term manufacturability.

Supply support for TK380P60Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET process technology.

The TK380P60Y belongs to Toshiba's DTMOS™ IV family, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, lighting, and computing applications where thermal performance and avalanche safety are critical.

FAQ

What is the maximum continuous drain current for TK380P60Y at 100 °C case temperature?

The TK380P60Y supports 6.1 A I_D (DC) at T_c = 100 °C, per its Absolute Maximum Ratings table. This derated current reflects thermal limits under real-world heatsinking conditions and must be verified against actual board layout and ambient airflow in the final design. The TK380P60Y datasheet specifies this value explicitly for safe continuous operation.

Does TK380P60Y have avalanche capability, and how is it specified?

Yes, TK380P60Y is fully rated for single-pulse avalanche with E_AS = 104 mJ (typ.) at T_ch = 25 °C, tested under V_DD = 90 V, L = 29.2 mH, R_G = 25 Ω, and I_AS = 2.5 A. This specification confirms its ability to absorb inductive energy safely during overvoltage events without degradation - a key requirement for unclamped flyback and PFC designs.

What is the gate threshold voltage range for TK380P60Y, and why does it matter?

The TK380P60Y has a gate threshold voltage V_th of 3–4 V (measured at V_DS = 10 V, I_D = 0.36 mA). This range ensures clean turn-on with standard 5 V PWM controllers and prevents spurious conduction from noise or slow gate transitions - a critical factor for stable operation in noisy industrial environments where the TK380P60Y is commonly deployed.

Can TK380P60Y be used in place of older DTMOS™ III devices like TK310P60W?

TK380P60Y is not a direct drop-in replacement for TK310P60W due to differences in R_DS(ON) (0.29 Ω vs. 0.31 Ω), Q_g (20 nC vs. 18 nC), and thermal resistance. While both are DPAK-packaged 600 V MOSFETs, the TK380P60Y offers improved conduction loss and avalanche rating. System validation is required before substitution, especially in thermally sensitive or timing-critical designs using the TK380P60Y.

What is the recommended gate resistor value for TK380P60Y in a 100 kHz flyback converter?

A gate resistor of 10–22 Ω is typically recommended for TK380P60Y in 100 kHz flyback applications, balancing switching speed (t_r/t_f ≈ 23/8.2 ns) and EMI control. Lower values (<10 Ω) may increase dv/dt stress and radiated emissions; higher values (>33 Ω) risk excessive switching loss. The TK380P60Y gate charge profile (Q_g = 20 nC) supports robust drive with common 1–2 A peak gate drivers.

TK380P60Y,RQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSV

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 360µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 590 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TK380P60Y,RQ FAQ

1.How can I place an order for TK380P60Y,RQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK380P60Y,RQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK380P60Y,RQ reliable?

The price and inventory of TK380P60Y,RQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK380P60Y,RQ is usually 5 days.

3.What payment methods are accepted for TK380P60Y,RQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK380P60Y,RQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK380P60Y,RQ?

TK380P60Y,RQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK380P60Y,RQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK380P60Y,RQ?

For technical support, including TK380P60Y,RQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK380P60Y,RQ requirements.

6.How does Aetrix verify that TK380P60Y,RQ is sourced from the original manufacturer or authorized distributors?

All TK380P60Y,RQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK380P60Y,RQ meets industry standards.

7.What is the process for return or replacement of TK380P60Y,RQ?

All TK380P60Y,RQ units undergo pre-shipment inspection (PSI). If there is an issue with TK380P60Y,RQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK380P60Y,RQ part is unused and in its original packaging.

Return procedure for TK380P60Y,RQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…