Toshiba Semiconductor and Storage TK39J60W,S1VQ

Overview

TK39J60W,S1VQ from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 38.8 A continuous drain current, and ultra-low R_DS(ON) of 0.055 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in 1–3 kW industrial SMPS.

For engineers reviewing the TK39J60W,S1VQ datasheet, TK39J60W,S1VQ pinout, TK39J60W,S1VQ application, or TK39J60W,S1VQ equivalent, key selection criteria include its TO-3P(N) package thermal performance (R_th(ch-c) = 0.463 °C/W), avalanche ruggedness (E_AS = 608 mJ), and gate threshold voltage range (2.7–3.7 V) for reliable drive compatibility with standard PWM controllers.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its optimized charge characteristics-Q_g = 110 nC, Q_gd/Q_gs1 = 52/23 nC-support clean turn-on/turn-off transitions under hard-switching conditions up to 400 V bus voltage.

The integrated body diode exhibits t_rr = 450 ns and Q_rr = 5 µC at I_DR = 19.4 A, making it suitable for flyback and LLC resonant topologies where diode recovery behavior directly impacts EMI and efficiency. dv/dt immunity is rated ≥50 V/ns, ensuring robustness against parasitic ringing in high-dV/dt environments.

Key Specifications

Pinout & Package

TK39J60W,S1VQ is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring isolated metal tab for direct heatsink mounting and 4.6 g mass. The package provides low thermal resistance and high mechanical robustness for industrial power applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW62N60M2 and IXFH50N60P, TK39J60W,S1VQ offers superior thermal resistance (0.463 vs. ≥0.65 °C/W) and tighter V_th distribution-critical for parallel operation-but requires TO-3P(N)-specific mechanical design and insulation planning.

Availability

TK39J60W,S1VQ is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for TK39J60W,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The TK39J60W,S1VQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET family, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and infrastructure power systems.

FAQ

What is the maximum continuous drain current rating for TK39J60W,S1VQ at T_c = 25°C?

The TK39J60W,S1VQ is rated for 38.8 A continuous drain current (I_D) at case temperature T_c = 25°C. This value decreases with rising case temperature per the derating curve in Figure 8.15; at T_c = 100°C, the usable I_D drops to approximately 22 A. Thermal design must ensure the heatsink maintains T_c ≤ 100°C under full load to sustain reliable operation of the TK39J60W,S1VQ.

Does TK39J60W,S1VQ have an integrated body diode, and what are its key recovery parameters?

Yes, TK39J60W,S1VQ includes a monolithic body diode with reverse recovery time t_rr = 450 ns (typ.) and reverse recovery charge Q_rr = 5 µC at I_DR = 19.4 A and dI_DR/dt = 50 A/µs. These values are measured under standardized conditions and enable predictable commutation behavior in flyback, forward, and resonant converters-critical for minimizing voltage overshoot and EMI when using the TK39J60W,S1VQ in freewheeling roles.

What is the gate threshold voltage range for TK39J60W,S1VQ, and how does it affect drive circuit design?

The gate threshold voltage V_th for TK39J60W,S1VQ is specified from 2.7 V to 3.7 V at V_DS = 10 V and I_D = 1.9 mA. This tight range ensures consistent turn-on behavior across production lots and temperature, allowing use with standard 5 V or 12 V gate drivers without requiring negative bias or complex level-shifting. For robust noise immunity, gate drive voltage should exceed 10 V to fully enhance the TK39J60W,S1VQ and minimize R_DS(ON) variation.

Can TK39J60W,S1VQ be used in avalanche mode, and what is its guaranteed single-pulse energy rating?

Yes, TK39J60W,S1VQ is fully rated for single-pulse avalanche operation with guaranteed E_AS = 608 mJ at T_ch = 25°C. This rating applies under defined test conditions (V_DD = 90 V, L = 11.3 mH, R_G = 25 Ω, I_AR = 9.7 A) and permits safe energy clamping during inductive switching faults. Repeated avalanche stress is not recommended; the TK39J60W,S1VQ should be operated within SOA limits shown in Figure 8.17 for long-term reliability.

What package type does TK39J60W,S1VQ use, and what are its mechanical mounting requirements?

TK39J60W,S1VQ uses the TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), with a metal tab serving as the Drain terminal and thermal path. Mounting torque must not exceed 0.8 N·m to avoid package cracking or internal bond damage. Electrical isolation between the tab and heatsink is mandatory unless the Drain is system-ground referenced; recommended insulators include ceramic washers or silicone pads rated for ≥1.5 kV isolation and ≤0.5 °C/W thermal resistance.