My Inquiry
My Account
Toshiba Semiconductor and Storage TK39N60X,S1F
- Part No.:
- TK39N60X,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
TK39N60X,S1F.pdf
- Description:
- MOSFET N-CH 600V 38.8A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:14
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TK39N60X,S1F from Toshiba is a silicon N-channel power MOSFET using DTMOS™-H super-junction technology, rated for 600 V drain-source voltage and 38.8 A continuous drain current at Tc = 25 °C, with typ. RDS(ON) of 0.055 Ω and gate threshold voltage of 2.5–3.5 V; it serves as a primary switching device in high-efficiency AC-DC SMPS and industrial motor drives.
For engineers reviewing the TK39N60X,S1F datasheet, TK39N60X,S1F pinout, TK39N60X,S1F application, or TK39N60X,S1F equivalent, key selection criteria include its TO-247 package thermal performance (Rth(ch-c) = 0.463 °C/W), avalanche ruggedness (EAS = 608 mJ), and fast switching characteristics (tr = 35 ns, tf = 6 ns) under 400 V bus conditions.
Technical Context
This MOSFET employs Toshiba's DTMOS™-H super-junction structure to achieve low on-resistance and reduced output charge (Qgd = 26 nC), enabling high-voltage, high-current switching with minimized conduction and switching losses. Its enhancement-mode operation (Vth = 2.5–3.5 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.
Designed for hard-switched topologies, the TK39N60X,S1F features guaranteed single-pulse avalanche capability (IAR = 9.7 A, EAS = 608 mJ) and dv/dt ruggedness ≥50 V/ns, supporting robust operation in flyback, LLC resonant, and PFC boost stages without external snubbers in many designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports 400 V DC bus designs with 50 % safety margin for transient overvoltage |
| RDS(ON) typ. | 0.055 Ω at VGS = 10 V, ID = 12.5 A - enables <1.5 W conduction loss at 12 A continuous current |
| ID (DC) | 38.8 A at Tc = 25 °C - requires heatsinking for >15 A sustained operation in ambient air |
| Qg / Qgd | 85 nC / 26 nC - determines gate driver power requirement and turn-on/turn-off timing control |
| EAS | 608 mJ - allows safe energy absorption during inductive load switching without failure |
| Rth(ch-c) | 0.463 °C/W - enables ~100 W dissipation with 50 °C temperature rise from case to channel |
| dv/dt ruggedness | ≥50 V/ns - prevents spurious turn-on in high-dV/dt noise environments like motor drives |
Pinout & Package
TK39N60X,S1F is housed in a TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated metal tab (Drain-connected heatsink). The three-terminal configuration provides low-inductance, high-current path routing suitable for high-frequency power conversion.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control input | Receives 2.5–3.5 V threshold signal; requires ≤10 Ω series resistance to damp ringing and limit peak gate current |
| 2: Drain (Heatsink) | High-side power terminal | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground-referenced |
| 3: Source | Power return / reference node | Serves as local ground reference for gate drive; layout must minimize source inductance to preserve switching speed |
Key Features
| Feature | Design Value |
|---|---|
| DTMOS™-H super-junction structure | Reduces RDS(ON) × area product by >30 % vs. planar MOSFETs, enabling smaller heatsinks in 600 V applications |
| Low Crss (8 pF) | Minimizes Miller feedback, improving noise immunity and reducing risk of false turn-on during high dV/dt transitions |
| Guaranteed avalanche rating | Supports unclamped inductive switching without derating-eliminates need for external clamping in many PFC and motor control designs |
| RoHS-compliant marking | [[G]]/RoHS [[Pb]] marking confirms lead-free termination and compliance with EU Directive 2011/65/EU |
| ESD-sensitive handling | Requires Class 1C (≤1000 V HBM) ESD controls during assembly to prevent latent gate oxide damage |
Applications
| Industrial Switching Power Supplies | Server & Telecom Rectifiers |
|---|---|
Use Scenario: Primary-side switch in 1–3 kW active clamp forward or half-bridge PFC converters operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element controlling energy transfer into bulk capacitor. Use Value: 0.055 Ω RDS(ON) reduces conduction loss by ~25 % vs. legacy 600 V MOSFETs, improving full-load efficiency to >95 %. | Use Scenario: Output synchronous rectification in 48 V intermediate bus converters with tight thermal constraints. IC Role / Device Role / Timing Role: Low-side switching device in dual-MOSFET synchronous buck stage, driven by dedicated gate controller. Use Value: Fast tr/tf (35 ns / 6 ns) and low Qgd enable precise dead-time control and <100 ns minimum on-time capability. |
| Motor Drive Inverters | Renewable Energy Inverters |
Use Scenario: Phase-leg switch in 3-phase 7.5 kW HVAC compressor inverters with 12 kHz PWM carrier frequency. IC Role / Device Role / Timing Role: IGBT replacement in 600 V bridge arms, operated in hard-switched mode with active gate control. Use Value: 608 mJ EAS rating withstands motor back-EMF transients during sudden load changes without desaturation protection. | Use Scenario: DC-link switch in string-level solar microinverters interfacing 600 V PV arrays. IC Role / Device Role / Timing Role: High-side isolation switch enabling rapid DC disconnection per NEC 690.12 rapid shutdown requirements. Use Value: 600 V VDSS and 150 °C Tch rating support operation in outdoor enclosures up to 85 °C ambient with 20 K thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW38N60M2 (STMicroelectronics) | RDS(ON) = 0.052 Ω, Qg = 75 nC, TO-247 package, but lower EAS (420 mJ) | Lacks guaranteed avalanche rating; requires external clamping in inductive switching | Prefer when gate drive power budget is tighter and avalanche stress is absent |
| IPP60R065C7 (Infineon) | RDS(ON) = 0.065 Ω, Qg = 92 nC, CoolMOS™ C7, higher Crss (12 pF) | Higher Miller capacitance increases susceptibility to dV/dt-induced turn-on in noisy environments | Choose when higher VGS(th) (3.0–4.5 V) improves noise immunity in low-noise control domains |
Compared with STW38N60M2 and IPP60R065C7, TK39N60X,S1F delivers superior avalanche ruggedness and lower Crss for stable hard-switching in industrial PFC and motor drives, though it requires more gate drive current than the Infineon part due to lower Qg.
Availability
TK39N60X,S1F is available at Aetrix Electronics and suitable for industrial switching power supplies, server rectifiers, motor drive inverters, and renewable energy inverters requiring stable component supply across multi-year production cycles.
Supply support for TK39N60X,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of leadership in high-voltage MOSFET innovation.
The TK39N60X,S1F belongs to Toshiba's DTMOS™-H super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability 600 V switching applications in industrial and infrastructure power systems.
FAQ
What is the maximum continuous drain current rating for TK39N60X,S1F?
The TK39N60X,S1F has a maximum continuous drain current ID of 38.8 A at case temperature Tc = 25 °C. At higher case temperatures, this rating decreases per the SOA curve; for example, it drops to ~22 A at Tc = 100 °C. Derating must follow the PD–Tc curve in Figure 8.15 of the official datasheet, and actual design current should consider thermal interface resistance and heatsink performance to maintain Tch ≤ 150 °C.
Does TK39N60X,S1F support avalanche operation, and what is its rated energy?
Yes, TK39N60X,S1F is fully specified for single-pulse avalanche operation with a guaranteed EAS of 608 mJ at Tch = 25 °C (VDD = 90 V, L = 11.3 mH, RG = 25 Ω, IAR = 9.7 A). This rating enables reliable unclamped inductive switching in PFC and motor drive circuits without external snubbers, provided layout minimizes stray inductance and gate drive remains stable during recovery.
What is the gate threshold voltage range for TK39N60X,S1F, and how does it affect drive requirements?
The gate threshold voltage Vth of TK39N60X,S1F is specified from 2.5 V to 3.5 V at VDS = 10 V and ID = 1.9 mA. This relatively low and narrow Vth range ensures consistent turn-on behavior with standard 10 V gate drivers while maintaining noise margin against false triggering. However, it necessitates clean, well-decoupled gate drive with ≤10 Ω series resistance to avoid oscillation during Miller plateau transition.
Is TK39N60X,S1F RoHS compliant, and how is compliance indicated on the device?
Yes, TK39N60X,S1F is RoHS compliant. Compliance is marked on the device body with an underlined lot number prefix indicating [[G]]/RoHS [[Pb]], confirming lead-free terminations and adherence to EU Directive 2011/65/EU. Non-underlined markings denote non-RoHS versions containing lead; always verify marking per shipment documentation and consult Toshiba's environmental compliance portal for material declarations.
What thermal resistance values apply to TK39N60X,S1F, and how do they impact heatsink selection?
TK39N60X,S1F has Rth(ch-c) = 0.463 °C/W (channel-to-case) and Rth(ch-a) = 50 °C/W (channel-to-ambient, no heatsink). For practical use, only Rth(ch-c) is relevant - it defines the junction-to-heatsink path. With a target ΔT = 50 °C and 25 W dissipation, required total thermal resistance (heatsink + interface) must be ≤ (50 − 0.463) ≈ 49.5 °C/W. Interface material choice (e.g., thermal pad vs. paste) directly impacts achievable Rth(c-sink).
TK39N60X,S1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV-H
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs:
- 85 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4100 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 270W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
TK39N60X,S1F FAQ
1.How can I place an order for TK39N60X,S1F through Aetrix?
Please submit a Request for Quotation (RFQ) for TK39N60X,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK39N60X,S1F reliable?
The price and inventory of TK39N60X,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK39N60X,S1F is usually 5 days.
3.What payment methods are accepted for TK39N60X,S1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK39N60X,S1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK39N60X,S1F?
TK39N60X,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK39N60X,S1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK39N60X,S1F?
For technical support, including TK39N60X,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK39N60X,S1F requirements.
6.How does Aetrix verify that TK39N60X,S1F is sourced from the original manufacturer or authorized distributors?
All TK39N60X,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK39N60X,S1F meets industry standards.
7.What is the process for return or replacement of TK39N60X,S1F?
All TK39N60X,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK39N60X,S1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK39N60X,S1F part is unused and in its original packaging.
Return procedure for TK39N60X,S1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TK39N60X,S1F Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
