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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK3A60DA(Q,M)

Name: TK3A60DA(Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK3A60DA(Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK3A60DA(Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK3A60DA(Q,M).pdf

Description:: MOSFET N-CH 600V 2.5A TO220SIS

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Product details

Overview

TK3A60DA(Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 600 V drain-source breakdown voltage (V_(BR)DSS), 2.2 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 1.3 A, 1.5 S typical forward transfer admittance |Y_fs|, and 180 mJ single-pulse avalanche energy - enabling robust operation in offline SMPS and PFC stages.

For engineers reviewing the TK3A60DA(Q,M) datasheet, TK3A60DA(Q,M) pinout, TK3A60DA(Q,M) application, or TK3A60DA(Q,M) equivalent, key selection considerations include its 600 V rating, SC-67 package thermal resistance (R_th(ch-c) = 4.17 °C/W), gate threshold range (2.4–4.4 V), integrated body diode with 700 ns reverse recovery time, and suitability for continuous 2.5 A DC drain current at T_c = 25°C.

Technical Context

This N-channel enhancement-mode MOSFET operates with a gate threshold voltage of 2.4–4.4 V at V_DS = 10 V and I_D = 1 mA, ensuring reliable turn-on under standard 10 V gate drive. Its low 2.2 Ω R_DS(ON) and high 1.5 S |Y_fs| support efficient conduction and fast switching in hard-switched topologies.

The device is rated for 600 V V_DSS, 30 W drain power dissipation at T_c = 25°C, and withstands 180 mJ single-pulse avalanche energy under defined test conditions (V_DD = 90 V, L = 50 mH, I_AR = 2.5 A). Its SC-67 package provides mechanical robustness and thermal performance suitable for industrial-grade power conversion.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports primary-side switching in universal-input AC-DC converters up to 380 V DC bus.
R_DS(ON) (typ.)	2.2 Ω @ V_GS = 10 V, I_D = 1.3 A - enables low conduction loss in 2–3 A output SMPS designs.
\|Y_fs\| (typ.)	1.5 S @ V_DS = 10 V, I_D = 1.3 A - delivers strong transconductance for stable gate control and dynamic response.
E_AS	180 mJ - provides margin against inductive switching stress in flyback and forward converters.
R_th(ch-c)	4.17 °C/W - allows 30 W power dissipation with ≤125°C channel-to-case temperature rise at T_c = 25°C.
Q_g	9 nC - balances switching speed and gate driver loading in 50–100 kHz SMPS applications.
V_th range	2.4–4.4 V @ V_DS = 10 V, I_D = 1 mA - ensures compatibility with standard logic-level and dedicated gate drivers.

Pinout & Package

TK3A60DA(Q,M) is housed in the SC-67 (Toshiba 2-10U1B) through-hole package, optimized for high-voltage isolation and thermal management in power supply PCB layouts. The package weighs 1.7 g and conforms to JEITA standards.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives gate drive signal; requires <±30 V absolute max rating and exhibits ±1 μA leakage at ±30 V.
2: Drain	High-voltage power terminal	Connects to primary-side high-voltage rail (up to 600 V); carries switched current and sustains avalanche energy.
3: Source	Reference/return path	Serves as power ground reference for gate drive; hosts body diode anode for freewheeling current in flyback/forward topologies.

Key Features

Feature	Design Value
Low R_DS(ON)	2.2 Ω typ. reduces conduction losses in 2.5 A continuous drain current applications, improving efficiency in compact SMPS.
High \|Y_fs\|	1.5 S typ. ensures strong gate control authority and stable small-signal gain across operating temperature range.
Avalanche-rated	180 mJ single-pulse E_AS supports reliable operation under transient overvoltage and inductive kick conditions.
Integrated body diode	V_DSF = −1.7 V @ I_DR = 2.5 A enables self-contained freewheeling without external diode in flyback converters.
Thermal robustness	R_th(ch-c) = 4.17 °C/W allows direct mounting to heatsink for sustained 30 W dissipation without derating below 100°C case temperature.

Applications

AC-DC Switching Power Supplies	DC-DC Flyback Converters
Use Scenario: Universal-input (85–265 V_AC) offline SMPS for industrial control and LED drivers. IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM) flyback topology. Use Value: 600 V V_DSS and 180 mJ E_AS ensure safe operation during line surges and transformer leakage spikes.	Use Scenario: Isolated 12 V/2 A auxiliary supply in telecom rectifiers and server PSUs. IC Role / Device Role / Timing Role: Main switching element handling 2.5 A peak drain current at 65 kHz. Use Value: 2.2 Ω R_DS(ON) minimizes conduction loss while 9 nC Q_g maintains manageable gate drive requirements.
Power Factor Correction (PFC)	Industrial Motor Drives
Use Scenario: Boost-type active PFC stage in 300 W industrial power supplies. IC Role / Device Role / Timing Role: Switching transistor in continuous conduction mode (CCM) boost converter. Use Value: High \|Y_fs\| (1.5 S) and low V_th spread (2.4–4.4 V) support precise current-mode control loop stability.	Use Scenario: Half-bridge high-side switch in 24 V DC brushless motor controllers. IC Role / Device Role / Timing Role: High-voltage switching node in H-bridge output stage driving inductive loads. Use Value: Integrated body diode with 700 ns t_rr and 3.5 μC Q_rr reduces switching loss and EMI during commutation.

AC-DC Switching Power Supplies

DC-DC Flyback Converters

Use Scenario: Universal-input (85–265 V_AC) offline SMPS for industrial control and LED drivers.

IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: 600 V V_DSS and 180 mJ E_AS ensure safe operation during line surges and transformer leakage spikes.

Use Scenario: Isolated 12 V/2 A auxiliary supply in telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Main switching element handling 2.5 A peak drain current at 65 kHz.

Use Value: 2.2 Ω R_DS(ON) minimizes conduction loss while 9 nC Q_g maintains manageable gate drive requirements.

Power Factor Correction (PFC)

Industrial Motor Drives

Use Scenario: Boost-type active PFC stage in 300 W industrial power supplies.

IC Role / Device Role / Timing Role: Switching transistor in continuous conduction mode (CCM) boost converter.

Use Value: High |Y_fs| (1.5 S) and low V_th spread (2.4–4.4 V) support precise current-mode control loop stability.

Use Scenario: Half-bridge high-side switch in 24 V DC brushless motor controllers.

IC Role / Device Role / Timing Role: High-voltage switching node in H-bridge output stage driving inductive loads.

Use Value: Integrated body diode with 700 ns t_rr and 3.5 μC Q_rr reduces switching loss and EMI during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3NK60ZFP	600 V V_DSS, 2.4 Ω R_DS(ON), 130 mJ E_AS, TO-220FP package	Lower avalanche energy and higher R_DS(ON); requires larger heatsink area due to higher R_th(ch-c).	Preferred where TO-220FP footprint is mandated and lower-cost sourcing is prioritized over avalanche margin.
IXTP2N60P	600 V V_DSS, 3.6 Ω R_DS(ON), 125 mJ E_AS, TO-220 package	Higher on-resistance and lower \|Y_fs\| (0.8 S); lacks specified t_rr/Q_rr for body diode.	Acceptable for non-critical 1 A–2 A applications where gate drive strength and diode recovery are not limiting factors.

Compared with STP3NK60ZFP and IXTP2N60P, TK3A60DA(Q,M) offers superior avalanche ruggedness (180 mJ), lower R_DS(ON), and verified body diode parameters - making it preferable for high-reliability, high-stress switching regulator designs where thermal and transient margins are critical.

Availability

TK3A60DA(Q,M) is available at Aetrix Electronics and suitable for AC-DC switching power supplies, DC-DC flyback converters, and industrial motor drives requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for TK3A60DA(Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.

The TK3A60DA(Q,M) belongs to Toshiba's π-MOSⅦ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching regulator applications in industrial and commercial power supplies.

FAQ

What is the maximum continuous drain current for TK3A60DA(Q,M) at 25°C case temperature?

The TK3A60DA(Q,M) supports a maximum continuous drain current (I_D) of 2.5 A at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature ≤150°C and accounts for R_th(ch-c) = 4.17 °C/W. At elevated case temperatures, derating is required per the PD–Tc curve in the datasheet.

Does TK3A60DA(Q,M) have an integrated body diode, and what are its key parameters?

Yes, TK3A60DA(Q,M) includes an integrated body diode with forward voltage V_DSF = −1.7 V at I_DR = 2.5 A and V_GS = 0 V. Its reverse recovery time t_rr is 700 ns and reverse recovery charge Q_rr is 3.5 μC under specified test conditions (dI_DR/dt = 100 A/μs), enabling use in flyback and synchronous rectification circuits without external diodes.

What gate drive voltage range is required to fully enhance TK3A60DA(Q,M)?

The TK3A60DA(Q,M) is an enhancement-mode MOSFET with a gate threshold voltage V_th ranging from 2.4 V to 4.4 V (V_DS = 10 V, I_D = 1 mA). For full enhancement and minimal R_DS(ON), a gate-source voltage of ≥10 V is recommended, as R_DS(ON) is characterized at V_GS = 10 V. The absolute maximum V_GS rating is ±30 V.

Is TK3A60DA(Q,M) suitable for avalanche operation, and what are the test conditions?

Yes, TK3A60DA(Q,M) is rated for single-pulse avalanche energy E_AS = 180 mJ. This rating is validated under specific test conditions: V_DD = 90 V, initial channel temperature T_ch = 25°C, inductive load L = 50 mH, gate resistor R_G = 25 Ω, and avalanche current I_AR = 2.5 A. Repetitive avalanche is limited to 3.0 mJ per pulse.

What package type does TK3A60DA(Q,M) use, and how does it compare to TO-220?

TK3A60DA(Q,M) uses the SC-67 package (Toshiba designation 2-10U1B), a through-hole variant with improved creepage/clearance versus TO-220 for high-voltage applications. Unlike TO-220, SC-67 features isolated drain tab and optimized leadframe geometry, supporting higher working voltages and better thermal coupling to heatsinks via its metal tab.

TK3A60DA(Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8Ohm @ 1.3A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK3A60DA(Q,M) FAQ

1.How can I place an order for TK3A60DA(Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK3A60DA(Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK3A60DA(Q,M) reliable?

The price and inventory of TK3A60DA(Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3A60DA(Q,M) is usually 5 days.

3.What payment methods are accepted for TK3A60DA(Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3A60DA(Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK3A60DA(Q,M)?

TK3A60DA(Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK3A60DA(Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK3A60DA(Q,M)?

For technical support, including TK3A60DA(Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3A60DA(Q,M) requirements.

6.How does Aetrix verify that TK3A60DA(Q,M) is sourced from the original manufacturer or authorized distributors?

All TK3A60DA(Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3A60DA(Q,M) meets industry standards.

7.What is the process for return or replacement of TK3A60DA(Q,M)?

All TK3A60DA(Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK3A60DA(Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK3A60DA(Q,M) part is unused and in its original packaging.

Return procedure for TK3A60DA(Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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