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Toshiba Semiconductor and Storage TK3A65DA(STA4,QM)

Part No.:
TK3A65DA(STA4,QM)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixTK3A65DA(STA4,QM).pdf
Description:
MOSFET N-CH 650V 2.5A TO220SIS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,536

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Product details

Overview

TK3A65DA(STA4,QM) from Toshiba is a silicon N-channel power MOSFET designed for high-voltage switching regulator applications. It features 650 V drain-source breakdown voltage, 2.3 Ω typical RDS(ON) at VGS = 10 V and ID = 1.3 A, 2.2 S typical forward transfer admittance, 244 mJ single-pulse avalanche energy, and SC-67 (2-10U1B) package with isolated heatsink-compatible leadframe.

For engineers reviewing the TK3A65DA(STA4,QM) datasheet, TK3A65DA(STA4,QM) pinout, TK3A65DA(STA4,QM) application, or TK3A65DA(STA4,QM) equivalent, key selection criteria include its 650 V blocking capability, low conduction loss in flyback and PFC stages, thermal resistance of 3.57 °C/W (ch-to-case), and validated avalanche ruggedness under 90 V/2.5 A test conditions.

Technical Context

This MOSFET employs π-MOSⅦ process technology to achieve enhanced switching efficiency and avalanche robustness. Its enhancement-mode gate threshold (2.4–4.4 V) enables direct drive from standard PWM controllers, while low Crss (3 pF) and Qgd (5 nC) support fast, low-loss hard-switching operation in offline SMPS topologies.

The device integrates an intrinsic body diode with 1000 ns reverse recovery time and 5 μC Qrr, suitable for discontinuous conduction mode (DCM) flyback converters. Thermal design is supported by a channel-to-case thermal resistance of 3.57 °C/W and maximum channel temperature rating of 150 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS650 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in primary-side switching
RDS(ON)2.3 Ω (typ.) - enables <1.5 W conduction loss at 1.3 A DC current in 20–40 W adapters
|Yfs|2.2 S (typ.) - provides strong transconductance for stable gate control under load transients
EAS244 mJ - withstands single-pulse inductive energy without failure in unclamped inductive switching
Ciss490 pF - balances switching speed and EMI control in 65–130 kHz SMPS designs
Qg11 nC - allows efficient gate driving with <1 W driver loss using 10 Ω gate resistor
Rth(ch-c)3.57 °C/W - enables 35 W continuous dissipation with ≤100 °C case rise above ambient

Pinout & Package

TK3A65DA(STA4,QM) is housed in the SC-67 (Toshiba 2-10U1B) package - a through-hole, isolated heatsink-mountable outline with 3.0 mm creepage/clearance, 1.7 g mass, and copper leadframe optimized for thermal transfer and mechanical reliability in industrial power supplies.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives PWM signal; threshold 2.4–4.4 V ensures compatibility with 5 V/12 V controllers
2 (Drain)High-voltage output nodeConnected to transformer primary or bus rail; rated for 650 V repetitive blocking
3 (Source)Power return referenceServes as local ground for gate drive; ties to source of external bootstrap diode in half-bridge

Key Features

FeatureDesign Value
π-MOSⅦ silicon processDelivers lower RDS(ON) × Qg figure-of-merit than prior generations, reducing total switching + conduction losses
Single-pulse avalanche rating244 mJ verified per JEITA ED-4701 301 test method - eliminates need for external snubbers in cost-sensitive flyback designs
Low Crss / Qgd ratio3 pF Crss and 5 nC Qgd minimize Miller-induced shoot-through risk and enable clean turn-off in high-dV/dt environments
Isolated heatsink mountingSC-67 package allows direct bolt-down to chassis or heatsink without insulating pads, reducing thermal interface resistance
RoHS-compliant marking[[G]]/RoHS COMPATIBLE label confirms compliance with Directive 2011/65/EU; Pb-free plating on leads

Applications

AC-DC Adapter Power SupplyIndustrial LED Driver

Use Scenario: 24 W universal-input flyback converter powering USB-C PD accessories.

IC Role / Device Role: Primary-side high-voltage switch handling 650 V DC link and delivering 1.3 A peak primary current.

Use Value: 2.3 Ω RDS(ON) limits conduction loss to <1.2 W; 244 mJ EAS absorbs leakage inductance spikes without clamping circuitry.

Use Scenario: Constant-current 40 V/700 mA LED driver for street lighting with active PFC front-end.

IC Role / Device Role: Boost switch in continuous conduction mode (CCM) PFC stage operating at 65 kHz.

Use Value: Low Ciss (490 pF) and Qg (11 nC) reduce gate drive loss; 650 V rating accommodates 400 V DC bus with margin.

Offline SMPS for IoT GatewaysWhite Goods Auxiliary Power Supply

Use Scenario: 12 V/0.5 A auxiliary supply in smart home hub, derived from main 390 V DC bus.

IC Role / Device Role: DCM flyback switch with self-supplied bias winding, operating at 100 kHz.

Use Value: Fast tr (18 ns) and tf (8 ns) ensure minimal dead-time loss; 10 μA IDSS guarantees low standby leakage.

Use Scenario: 5 V/1 A standby supply in refrigerator control board, required to operate continuously over 10-year lifetime.

IC Role / Device Role: Primary-side switch in quasi-resonant (QR) flyback with valley-switching controller.

Use Value: 150 °C Tch rating and 3.57 °C/W Rth(ch-c) support reliable long-term operation at 60 °C ambient with derated PD.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP3NK60ZFP600 V VDSS, 3.3 Ω RDS(ON), TO-220FP package, no avalanche rating specifiedLimited to ≤265 VAC inputs; requires external avalanche protection in unclamped circuitsLower cost but higher conduction loss and no guaranteed EAS; suitable only where layout avoids inductive stress
FQP4N60C600 V VDSS, 2.7 Ω RDS(ON), TO-220 package, 150 mJ EAS (typ.)Marginally adequate for 230 VAC mains; lower avalanche energy increases failure risk in high-Lleak transformersAcceptable for low-cost consumer adapters with conservative transformer design; not recommended for industrial use

Compared with STP3NK60ZFP and FQP4N60C, TK3A65DA(STA4,QM) offers superior 650 V rating, lower RDS(ON), and fully specified 244 mJ avalanche capability - making it the preferred choice for robust, long-lifetime offline SMPS where reliability under transient overload is critical.

Availability

TK3A65DA(STA4,QM) is available at Aetrix Electronics and suitable for AC-DC adapter power supplies, industrial LED drivers, and offline SMPS requiring stable component supply, long-term manufacturability, and guaranteed avalanche ruggedness.

Supply support for TK3A65DA(STA4,QM) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

TK3A65DA(STA4,QM) belongs to Toshiba's π-MOSⅦ high-voltage MOSFET product line, engineered specifically for energy-efficient, compact, and rugged offline switching power supplies targeting industrial, lighting, and consumer applications.

FAQ

What is the maximum continuous drain current rating for TK3A65DA(STA4,QM) at 25°C case temperature?

The TK3A65DA(STA4,QM) has a DC drain current rating of 2.5 A at Tc = 25°C, as specified in its Absolute Maximum Ratings table. This value assumes ideal heatsinking and must be derated linearly as case temperature rises - for example, to ~1.7 A at Tc = 100°C - to maintain channel temperature ≤150°C. The pulse rating is 10 A (t = 1 ms).

Does TK3A65DA(STA4,QM) have a built-in body diode, and what are its key parameters?

Yes, TK3A65DA(STA4,QM) includes an integrated body diode. Its forward voltage is −1.7 V at IDR = 2.5 A and VGS = 0 V, with reverse recovery time trr = 1000 ns and reverse recovery charge Qrr = 5 μC under specified test conditions (dIDR/dt = 100 A/μs). These values are relevant for DCM flyback and synchronous rectification analysis.

What is the gate threshold voltage range for TK3A65DA(STA4,QM), and how does it affect drive requirements?

The gate threshold voltage Vth for TK3A65DA(STA4,QM) is 2.4 to 4.4 V (measured at VDS = 10 V, ID = 1 mA). This range ensures reliable turn-on with standard 5 V or 12 V gate drivers while avoiding false triggering from noise. A minimum 10 V VGS is recommended to achieve full RDS(ON) performance and minimize conduction loss.

Can TK3A65DA(STA4,QM) be used in avalanche mode during normal operation, and what is its rated energy?

TK3A65DA(STA4,QM) is rated for single-pulse avalanche energy EAS = 244 mJ under defined test conditions (VDD = 90 V, L = 69 mH, IAR = 2.5 A, Tch = 25°C). While it can safely absorb such energy once, repetitive avalanche is limited to 3.5 mJ per pulse - so sustained operation in unclamped inductive switching is not recommended without additional protection or design margin.

What package type and mounting configuration does TK3A65DA(STA4,QM) use, and how does it impact thermal design?

TK3A65DA(STA4,QM) uses the SC-67 (Toshiba 2-10U1B) package - a through-hole, isolated heatsink-mountable outline with 3.0 mm creepage and copper leadframe. Its Rth(ch-c) = 3.57 °C/W enables direct thermal coupling to a metal chassis or heatsink, eliminating insulator layers and reducing total thermal resistance by up to 40% compared to standard TO-220FP.

TK3A65DA(STA4,QM) Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
π-MOSVII
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.51Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220SIS

TK3A65DA(STA4,QM) FAQ

1.How can I place an order for TK3A65DA(STA4,QM) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK3A65DA(STA4,QM) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK3A65DA(STA4,QM) reliable?

The price and inventory of TK3A65DA(STA4,QM) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3A65DA(STA4,QM) is usually 5 days.

3.What payment methods are accepted for TK3A65DA(STA4,QM)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3A65DA(STA4,QM) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK3A65DA(STA4,QM)?

TK3A65DA(STA4,QM) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK3A65DA(STA4,QM) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK3A65DA(STA4,QM)?

For technical support, including TK3A65DA(STA4,QM) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3A65DA(STA4,QM) requirements.

6.How does Aetrix verify that TK3A65DA(STA4,QM) is sourced from the original manufacturer or authorized distributors?

All TK3A65DA(STA4,QM) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3A65DA(STA4,QM) meets industry standards.

7.What is the process for return or replacement of TK3A65DA(STA4,QM)?

All TK3A65DA(STA4,QM) units undergo pre-shipment inspection (PSI). If there is an issue with TK3A65DA(STA4,QM), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK3A65DA(STA4,QM) part is unused and in its original packaging.

Return procedure for TK3A65DA(STA4,QM):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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