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Toshiba Semiconductor and Storage TK3A90E,S4X
- Part No.:
- TK3A90E,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK3A90E,S4X.pdf
- Description:
- PB-F POWER MOSFET TRANSISTOR TO-
- Quantity:
- Payment:
- Shipping:
Inventory:8,738
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Product details
Overview
TK3A90E,S4X from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅢ family, designed for high-voltage switching applications. It delivers 900 V drain-source breakdown voltage, 2.5 A DC drain current, and typ. 3.7 Ω RDS(ON) at VGS = 10 V, enabling efficient operation in offline AC-DC converters and industrial SMPS.
For engineers reviewing the TK3A90E,S4X datasheet, TK3A90E,S4X pinout, TK3A90E,S4X application, or TK3A90E,S4X equivalent, key selection criteria include its 900 V VDSS, TO-220SIS package with isolated mounting, 217 mJ single-pulse avalanche energy rating, and guaranteed MOSFET dv/dt ruggedness of 10 V/ns - critical for reliable flyback and PFC stage design.
Technical Context
This N-channel enhancement-mode MOSFET features a gate threshold voltage range of 2.5–4.0 V (VDS = 10 V, ID = 0.25 mA), ensuring compatibility with standard 3.3 V/5 V logic-level drivers. Its low 10 µA max IDSS at 720 V supports stable high-voltage blocking in standby and light-load conditions.
Thermal performance is defined by Rth(ch-c) = 3.57 °C/W and channel temperature limit of 150 °C. The device integrates an intrinsic body diode with typ. 800 ns reverse recovery time and 4 µC Qrr, suitable for discontinuous conduction mode (DCM) topologies without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 900 V - supports universal-input offline SMPS designs up to 380 V DC bus with safety margin |
| RDS(ON) (typ.) | 3.7 Ω at VGS = 10 V - enables low conduction loss in 2–3 A primary-side switching applications |
| ID (DC) | 2.5 A - defines continuous current capability under heatsink-limited thermal conditions (Tc = 25 °C) |
| EAS | 217 mJ - quantifies robustness against inductive switching transients in transformer-coupled circuits |
| dv/dt ruggedness | 10 V/ns - ensures immunity to false turn-on during high-slew-rate voltage transitions in high-frequency converters |
| Ciss | 650 pF - determines gate drive power requirement and influences switching speed in hard-switched topologies |
| Qg | 15 nC - sets minimum gate driver output current needed for <55 ns turn-on time with 25 Ω gate resistor |
Pinout & Package
TK3A90E,S4X is housed in a TO-220SIS (TOSHIBA 2-10U1S) package with internal isolation between drain and mounting tab - enabling direct heatsink attachment without insulating hardware. The package weighs 1.7 g and supports 0.6 N·m mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal requiring ≤±1 µA leakage current; driven with 10 V for full enhancement |
| 2 | Drain | Main high-voltage power terminal; electrically connected to isolated metal tab for thermal path |
| 3 | Source | Reference node for gate drive and current sensing; forms return path for load current |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage blocking | 900 V VDSS enables use in 400 V DC-link applications with >100 V safety margin |
| Low on-resistance | 3.7 Ω RDS(ON) minimizes I²R losses in 2.5 A primary switch applications |
| Avalanche-rated | 217 mJ EAS allows safe operation under unclamped inductive switching stress |
| Fast body diode | 800 ns trr and 4 µC Qrr reduce recovery-related losses in DCM flyback converters |
| ESD-sensitive | Requires handling per JESD22-A114; gate oxide withstands ±30 V VGSS but not static discharge |
Applications
| AC-DC Power Adapters | Industrial SMPS |
|---|---|
Use Scenario: 36 W universal-input offline adapter with DCM flyback topology operating at 65 kHz. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer through transformer. Use Value: 900 V VDSS and 217 mJ EAS ensure reliability across global mains voltages (85–265 V AC) and line surges. |
Use Scenario: 150 W industrial open-frame power supply with active PFC + LLC resonant secondary. IC Role / Device Role / Timing Role: PFC boost switch handling 2.5 A RMS current at 100 kHz switching frequency. Use Value: Low 3.7 Ω RDS(ON) reduces conduction loss in high-duty-cycle boost stage, improving efficiency above 92%. |
| LED Driver Power Supplies | UPS Input Stage |
Use Scenario: Constant-current LED driver for street lighting with 300 V DC bus and analog dimming. IC Role / Device Role / Timing Role: High-side switch in buck-derived constant-current regulator. Use Value: 10 µA max IDSS at 720 V ensures minimal standby power loss during dimmed or off states. |
Use Scenario: Line-interactive UPS with automatic voltage regulation (AVR) using bidirectional buck-boost converter. IC Role / Device Role / Timing Role: Main switching element in high-voltage buck-boost power stage. Use Value: 10 V/ns dv/dt ruggedness prevents spurious turn-on during fast grid voltage transitions during brownouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK90ZFP | 900 V VDSS, 2.5 A ID, but higher RDS(ON) = 5.5 Ω (typ.) and no specified EAS rating | Lacks guaranteed avalanche energy; requires external clamping in inductive loads | Acceptable where cost is prioritized over ruggedness and thermal margin is generous |
| IXTP3N90P | 900 V VDSS, 3.0 A ID, RDS(ON) = 4.2 Ω (typ.), EAS = 150 mJ - lower than TK3A90E,S4X | Lower avalanche rating limits use in high-L di/dt PFC stages without derating | Preferred when higher DC current headroom is needed, but requires 25% reduction in peak inductive energy |
Compared with STP3NK90ZFP and IXTP3N90P, TK3A90E,S4X offers superior avalanche robustness (217 mJ vs. unspecified/150 mJ) and lowest RDS(ON) (3.7 Ω), making it optimal for compact, high-reliability 2–3 A high-voltage switching stages where thermal and transient margins are constrained.
Availability
TK3A90E,S4X is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and UPS input stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for TK3A90E,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and energy efficiency.
The TK3A90E,S4X belongs to Toshiba's π-MOSⅢ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in offline power conversion systems up to 900 V.
FAQ
What is the maximum gate-source voltage rating for TK3A90E,S4X?
The TK3A90E,S4X has a maximum gate-source voltage (VGSS) rating of ±30 V. Exceeding this value risks permanent gate oxide damage. Gate drive circuits must be designed to clamp transients within this limit, especially during fast switching or layout-induced ringing. The TK3A90E,S4X gate leakage remains ≤±1 µA at rated VGSS, confirming robust oxide integrity under normal bias.
Does TK3A90E,S4X have an isolated package, and how does that affect heatsinking?
Yes, the TK3A90E,S4X uses the TO-220SIS package, where the drain is internally isolated from the mounting tab. This allows direct mechanical attachment to a common heatsink without electrical insulation hardware. The isolation voltage rating is 2000 VRMS, enabling safe operation in grounded-heatsink configurations typical in AC-DC power supplies. Thermal resistance from channel to case is 3.57 °C/W.
What is the typical reverse recovery charge (Qrr) of the body diode in TK3A90E,S4X?
The TK3A90E,S4X body diode has a typical reverse recovery charge (Qrr) of 4 µC under test conditions of IDR = 2.5 A, VGS = 0 V, and –dIDR/dt = 100 A/µs. This low Qrr value contributes to reduced switching losses in discontinuous conduction mode (DCM) flyback converters and improves overall efficiency compared to MOSFETs with higher Qrr.
Can TK3A90E,S4X be used in avalanche mode, and what is its rated single-pulse energy?
Yes, the TK3A90E,S4X is fully rated for single-pulse avalanche operation with a guaranteed EAS of 217 mJ at Tch = 25 °C. This rating applies under standardized test conditions (VDD ≈ 400 V, IAR = 2.5 A, L = 63.7 mH, RG = 25 Ω). Designers may rely on this value for snubberless operation in flyback or forward converters where inductive energy must be safely absorbed.
What is the gate threshold voltage range for TK3A90E,S4X, and how does it impact drive requirements?
The TK3A90E,S4X has a gate threshold voltage (Vth) range of 2.5 V to 4.0 V, measured at VDS = 10 V and ID = 0.25 mA. This wide range ensures turn-on compatibility with both 3.3 V and 5 V logic-level drivers while maintaining sufficient noise margin against false triggering. Full enhancement occurs at VGS = 10 V, where TK3A90E,S4X achieves its specified 3.7 Ω RDS(ON).
TK3A90E,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.6Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK3A90E,S4X FAQ
1.How can I place an order for TK3A90E,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK3A90E,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK3A90E,S4X reliable?
The price and inventory of TK3A90E,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3A90E,S4X is usually 5 days.
3.What payment methods are accepted for TK3A90E,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3A90E,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK3A90E,S4X?
TK3A90E,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK3A90E,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK3A90E,S4X?
For technical support, including TK3A90E,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3A90E,S4X requirements.
6.How does Aetrix verify that TK3A90E,S4X is sourced from the original manufacturer or authorized distributors?
All TK3A90E,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3A90E,S4X meets industry standards.
7.What is the process for return or replacement of TK3A90E,S4X?
All TK3A90E,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK3A90E,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK3A90E,S4X part is unused and in its original packaging.
Return procedure for TK3A90E,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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