Toshiba Semiconductor and Storage TK3R1A04PL,S4X

Overview

TK3R1A04PL,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H series, designed for high-current switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 2.5 mΩ (typ.) at V_GS = 10 V, Q_SW = 17.5 nC (typ.), and supports 82 A DC drain current with 40 V V_DSS.

For engineers reviewing the TK3R1A04PL,S4X datasheet, TK3R1A04PL,S4X pinout, TK3R1A04PL,S4X application, or TK3R1A04PL,S4X equivalent, key selection criteria include low conduction loss, fast switching capability, avalanche ruggedness (E_AS = 43 mJ), thermal performance (R_th(ch-c) = 4.16 °C/W), and TO-220SIS package compatibility with heatsink mounting.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and reduced gate charge. Its enhancement-mode operation (V_th = 1.4–2.4 V) ensures reliable turn-on with standard logic-level gate drivers, while its 40 V V_DSS rating targets 12 V and 24 V input systems.

The device integrates a robust body diode with t_rr = 50 ns (typ.) and Q_rr = 400 nC (max), supporting synchronous rectification and hard-switched topologies. Its single-pulse avalanche rating (I_AS = 82 A, E_AS = 43 mJ) enables operation under transient overvoltage conditions without external snubbers.

Key Specifications

Pinout & Package

TK3R1A04PL,S4X is housed in a TO-220SIS (TOSHIBA 2-10U1S) package with isolated tab, enabling direct heatsink mounting without insulating hardware. The package weighs 1.56 g and features three terminals arranged in a single row.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PBF and STP80NF55-08, TK3R1A04PL,S4X provides superior conduction efficiency, faster switching, and mechanical integration via isolated TO-220SIS - making it optimal for space- and thermally constrained 24–48 V industrial power stages where layout simplicity and thermal headroom are prioritized.

Availability

TK3R1A04PL,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across production lifecycles.

Supply support for TK3R1A04PL,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK3R1A04PL,S4X belongs to Toshiba's U-MOS-H power MOSFET product line, engineered specifically for high-current, high-frequency switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for TK3R1A04PL,S4X?

The TK3R1A04PL,S4X is rated for 82 A DC drain current at T_c = 25 °C. This rating assumes proper heatsinking and derating per the R_th(ch-c) = 4.16 °C/W thermal resistance. At elevated case temperatures, the current must be reduced linearly to maintain channel temperature ≤175 °C, as defined in the Safe Operating Area curve (Fig. 8.15).

Does TK3R1A04PL,S4X have an isolated package, and how does that affect PCB layout?

Yes, TK3R1A04PL,S4X uses the TO-220SIS package with electrically isolated metal tab. This eliminates the need for insulating pads or sil-pad materials when mounting to a grounded heatsink, simplifying thermal design and reducing assembly cost. The isolation also avoids parasitic ground loops in multi-MOSFET half-bridge layouts, enhancing noise immunity in motor drive applications.

What gate drive voltage is required to fully enhance TK3R1A04PL,S4X?

The TK3R1A04PL,S4X has a gate threshold voltage range of 1.4–2.4 V, but full enhancement (to achieve R_DS(ON) = 2.5 mΩ) requires V_GS ≥ 10 V. At V_GS = 4.5 V, R_DS(ON) rises to 3.8 mΩ (max), so 10 V gate drive is recommended for minimal conduction loss in high-current applications like DC-DC converters and motor drivers.

How does the body diode performance of TK3R1A04PL,S4X compare to standard MOSFETs?

The TK3R1A04PL,S4X features a fast-recovery body diode with t_rr = 50 ns (typ.) and Q_rr = 400 nC (max), optimized for synchronous rectification. Compared to generic MOSFETs with unoptimized diodes, this reduces reverse recovery loss and EMI in hard-switched topologies - a key advantage in 24 V motor drivers and 48 V telecom supplies where diode conduction occurs during dead-time intervals.

Is TK3R1A04PL,S4X suitable for avalanche-rated operation, and what are the limits?

Yes, TK3R1A04PL,S4X is characterized for single-pulse avalanche with E_AS = 43 mJ (typ.) at I_AS = 82 A and V_DD ≈ 32 V. This rating applies only to non-repetitive events such as inductive load switching or input transients. Repetitive avalanche is not guaranteed, and system design must ensure energy per event stays within the specified limit using appropriate snubber sizing or clamping circuits.