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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK3R2E06PL,S1X

Name: TK3R2E06PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK3R2E06PL,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK3R2E06PL,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK3R2E06PL,S1X.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK3R2E06PL,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H series, designed for high-current switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 2.4 mΩ (typ.) at V_GS = 10 V, supports 100 A DC drain current, and features Q_SW = 21 nC and Q_oss = 66 nC for fast, low-loss switching in 60 V systems.

For engineers reviewing the TK3R2E06PL,S1X datasheet, TK3R2E06PL,S1X pinout, TK3R2E06PL,S1X application, or TK3R2E06PL,S1X equivalent, key selection criteria include its TO-220 package thermal performance (R_th(ch-c) = 0.89 °C/W), avalanche ruggedness (E_AS = 61 mJ), and gate threshold range (1.5–2.5 V) for reliable 3.3 V/5 V logic-level drive compatibility.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_g ratio (19/71 nC) and Crss = 55 pF support stable high-frequency operation up to several hundred kHz in synchronous buck topologies.

The device integrates an intrinsic body diode with t_rr = 72 ns (typ.) and Q_rr = 400 nC (max), enabling use in freewheeling paths without external diodes in non-isolated converters. Channel temperature is rated to 175 °C, with derating required above T_c = 25 °C per R_th(ch-c).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage for 48 V bus applications with margin
R_DS(ON)	2.4 mΩ (typ. at V_GS = 10 V) - Enables <1 W conduction loss at 50 A
Q_SW	21 nC (typ.) - Reduces gate drive power and enables >500 kHz switching
E_AS	61 mJ - Withstands single-pulse inductive energy without failure
I_D (DC)	100 A - Sustained current capability with heatsink at T_c = 25 °C
R_th(ch-c)	0.89 °C/W - Allows efficient heat transfer to external heatsink
V_th	1.5–2.5 V - Ensures turn-on with standard 3.3 V or 5 V microcontroller outputs

Pinout & Package

Package: TO-220 (TOSHIBA 2-10X1A), through-hole, insulated tab, heatsink-connected drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control input; requires 10 V for full enhancement; sensitive to ESD
2	Drain (heatsink)	Main high-side current path; electrically connected to metal tab for thermal conduction
3	Source	Reference node for gate drive; common return for load current

Key Features

Feature	Design Value
U-MOS-H trench structure	Reduces R_DS(ON) × Q_g figure-of-merit by 30% vs. prior U-MOS generations
Low Q_oss	66 nC enables reduced turn-off loss in hard-switched converters
High avalanche energy rating	61 mJ supports robust operation during inductive load transients
Logic-level compatible V_th	1.5–2.5 V range ensures reliable turn-on with 3.3 V FPGA or MCU GPIOs

Applications

High-Efficiency DC-DC Converters	Switching Voltage Regulators
Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter operating at 300 kHz. IC Role / Device Role / Timing Role: High-side power switch handling continuous 50 A load current with minimal conduction loss. Use Value: 2.4 mΩ R_DS(ON) limits I²R loss to 6 W, improving system efficiency by ≥1.2% over 3.5 mΩ alternatives.	Use Scenario: Output stage switch in programmable lab bench power supply with 0–30 V, 0–10 A regulation. IC Role / Device Role / Timing Role: Main pass element in adjustable linear/synchronous hybrid regulator architecture. Use Value: Low Q_SW (21 nC) reduces gate drive loss and allows clean PWM control down to 1% duty cycle.
Motor Drivers	Industrial Power Supplies
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor controller driving 500 W fan load. IC Role / Device Role / Timing Role: Fast-switching power stage component with integrated body diode recovery (t_rr = 72 ns). Use Value: 100 A DC rating and 400 A pulsed capability handle motor stall currents without derating.	Use Scenario: Primary switch in telecom rectifier module converting -48 V DC to +5 V/12 V intermediate bus. IC Role / Device Role / Timing Role: High-reliability switching element rated for continuous operation at 85 °C ambient. Use Value: 175 °C channel temperature limit and R_th(ch-c) = 0.89 °C/W enable stable long-term operation under forced-air cooling.

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Use Scenario: Primary-side switch in 48 V input, 12 V output synchronous buck converter operating at 300 kHz.

IC Role / Device Role / Timing Role: High-side power switch handling continuous 50 A load current with minimal conduction loss.

Use Value: 2.4 mΩ R_DS(ON) limits I²R loss to 6 W, improving system efficiency by ≥1.2% over 3.5 mΩ alternatives.

Use Scenario: Output stage switch in programmable lab bench power supply with 0–30 V, 0–10 A regulation.

IC Role / Device Role / Timing Role: Main pass element in adjustable linear/synchronous hybrid regulator architecture.

Use Value: Low Q_SW (21 nC) reduces gate drive loss and allows clean PWM control down to 1% duty cycle.

Motor Drivers

Industrial Power Supplies

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor controller driving 500 W fan load.

IC Role / Device Role / Timing Role: Fast-switching power stage component with integrated body diode recovery (t_rr = 72 ns).

Use Value: 100 A DC rating and 400 A pulsed capability handle motor stall currents without derating.

Use Scenario: Primary switch in telecom rectifier module converting -48 V DC to +5 V/12 V intermediate bus.

IC Role / Device Role / Timing Role: High-reliability switching element rated for continuous operation at 85 °C ambient.

Use Value: 175 °C channel temperature limit and R_th(ch-c) = 0.89 °C/W enable stable long-term operation under forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(ON) = 4.0 mΩ (V_GS = 10 V); Q_g = 131 nC; TO-220 package	Higher conduction loss and slower switching; suitable only for ≤100 kHz designs	Choose when cost sensitivity outweighs efficiency targets and layout space permits larger heatsink
STP110N6F6	R_DS(ON) = 3.2 mΩ; Q_g = 85 nC; 60 V rating; same TO-220 footprint	Moderate trade-off: lower Q_g than IRF1404 but higher R_DS(ON) than TK3R2E06PL,S1X	Select if needing STMicroelectronics' qualified automotive-grade variant with AEC-Q101 stress testing

Compared with IRF1404PBF and STP110N6F6, TK3R2E06PL,S1X offers the lowest R_DS(ON) and Q_SW in this TO-220 60 V class, delivering superior efficiency in high-frequency, high-current applications where thermal headroom is constrained.

Availability

TK3R2E06PL,S1X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, motor drivers, and industrial power supplies requiring stable component supply and long-lifecycle support.

Supply support for TK3R2E06PL,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability and energy efficiency.

The TK3R2E06PL,S1X belongs to Toshiba's U-MOS-H power MOSFET product line, engineered specifically for high-current, high-frequency switching in server PSUs, telecom infrastructure, and industrial motor controls.

FAQ

What is the maximum continuous drain current rating for TK3R2E06PL,S1X at 25 °C case temperature?

The TK3R2E06PL,S1X is rated for 100 A DC drain current at T_c = 25 °C, limited by package capability per datasheet Note 2. At elevated case temperatures, current must be derated using the PD–Tc curve (Fig. 8.14) and R_th(ch-c) = 0.89 °C/W. The silicon limit remains 160 A, but sustained operation above 100 A requires active cooling verification.

Does TK3R2E06PL,S1X support logic-level gate drive from a 3.3 V microcontroller?

Yes - the TK3R2E06PL,S1X has a gate threshold voltage range of 1.5–2.5 V, ensuring reliable turn-on with 3.3 V logic. However, full enhancement (R_DS(ON) = 2.4 mΩ) requires V_GS = 10 V; at 4.5 V, R_DS(ON) rises to 3.2 mΩ (max). For optimal efficiency, a dedicated gate driver is recommended.

What is the safe operating area (SOA) limitation for TK3R2E06PL,S1X in linear mode?

The TK3R2E06PL,S1X SOA is defined in Fig. 8.15 and guarantees safe operation up to 100 A at V_DS = 10 V for pulse widths ≤ 10 ms. In linear (non-saturated) operation, power dissipation must stay below PD = 168 W at T_c = 25 °C, with strict derating above that temperature per R_th(ch-c).

Can TK3R2E06PL,S1X replace older U-MOS-VI or U-MOS-V devices in existing designs?

Yes - the TK3R2E06PL,S1X is a direct drop-in replacement for earlier Toshiba U-MOS-VI/V devices in TO-220 packages, offering improved R_DS(ON), lower Q_g, and enhanced avalanche ruggedness. Pinout, mounting, and thermal interface are identical; no PCB changes are required, though gate drive strength should be verified due to reduced Q_g.

Is TK3R2E06PL,S1X compliant with RoHS and REACH regulations?

Yes - TK3R2E06PL,S1X meets EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead-free plating and halogen-free molding compound are used. Full compliance documentation, including test reports, is available upon request from Aetrix Electronics or directly from Toshiba's environmental portal.

TK3R2E06PL,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 168W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK3R2E06PL,S1X FAQ

1.How can I place an order for TK3R2E06PL,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK3R2E06PL,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK3R2E06PL,S1X reliable?

The price and inventory of TK3R2E06PL,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3R2E06PL,S1X is usually 5 days.

3.What payment methods are accepted for TK3R2E06PL,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3R2E06PL,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK3R2E06PL,S1X?

TK3R2E06PL,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK3R2E06PL,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK3R2E06PL,S1X?

For technical support, including TK3R2E06PL,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3R2E06PL,S1X requirements.

6.How does Aetrix verify that TK3R2E06PL,S1X is sourced from the original manufacturer or authorized distributors?

All TK3R2E06PL,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3R2E06PL,S1X meets industry standards.

7.What is the process for return or replacement of TK3R2E06PL,S1X?

All TK3R2E06PL,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK3R2E06PL,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK3R2E06PL,S1X part is unused and in its original packaging.

Return procedure for TK3R2E06PL,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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