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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK3R3A06PL,S4X

Name: TK3R3A06PL,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK3R3A06PL,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK3R3A06PL,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK3R3A06PL,S4X.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK3R3A06PL,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET optimized for high-frequency switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 2.5 mΩ (typ., V_GS = 10 V), Q_SW = 21 nC (typ.), Q_oss = 66 nC (typ.), and supports 60 V V_DSS, 80 A I_D (DC), with TO-220SIS package for industrial-grade thermal performance.

For engineers reviewing the TK3R3A06PL,S4X datasheet, TK3R3A06PL,S4X pinout, TK3R3A06PL,S4X application, or TK3R3A06PL,S4X equivalent, key selection criteria include low gate charge for ZVS/ZCS topologies, avalanche ruggedness (E_AS = 76 mJ), and verified operation in 48 V bus motor control and synchronous buck regulators requiring <3 mΩ on-resistance at 10 V drive.

Technical Context

This device implements Toshiba's U-MOS-H trench-gate structure to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_g ratio (19/71 nC) enables fast, controllable turn-off with reduced Miller-induced oscillation risk, while the integrated body diode exhibits t_rr = 72 ns (typ.) and Q_rr = 400 nC (max) under dI/dt = 100 A/µs conditions.

The TK3R3A06PL,S4X operates as a unidirectional high-side or low-side switch in hard-switched and resonant topologies. Its V_th range (1.5–2.5 V) ensures gate-drive compatibility with 3.3 V and 5 V logic, and its R_th(ch-c) = 3.57 °C/W allows sustained 80 A DC current with proper heatsinking at T_c = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Supports 48 V nominal bus systems with 25 % voltage margin for transients
R_DS(ON)	2.5 mΩ (typ., V_GS = 10 V) - Enables ≤1.6 W conduction loss at 40 A continuous current
Q_SW	21 nC (typ.) - Reduces gate drive power and enables >500 kHz switching in high-efficiency SMPS
Q_oss	66 nC (typ.) - Low output charge minimizes turn-off energy loss in hard-switched converters
E_AS	76 mJ (single-pulse) - Withstands inductive energy spikes without failure in motor drive freewheeling
I_D (DC)	80 A - Rated for continuous operation with case temperature maintained at ≤25 °C
R_th(ch-c)	3.57 °C/W - Requires heatsink thermal resistance ≤1.5 °C/W for 175 °C channel limit at full load

Pinout & Package

Package: TO-220SIS (TOSHIBA 2-10U1S), isolated tab, 1.56 g typical weight, designed for vertical mounting with screw-down heatsink interface and 0.6 N·m mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires 10 V drive for full enhancement; sensitive to ESD (±20 V absolute max)
2	Drain	Main current path input; electrically connected to isolated metal tab; rated for 60 V blocking
3	Source	Reference node for gate drive; common return for load current; connects to PCB ground plane

Key Features

Feature	Design Value
U-MOS-H trench architecture	Reduces cell pitch and channel resistance, enabling 2.5 mΩ R_DS(ON) in TO-220SIS footprint
Low Q_gd/Q_g ratio	27 % (19/71 nC) - Improves switching controllability and reduces risk of false turn-on during high dv/dt
Enhancement-mode threshold	V_th = 1.5–2.5 V - Ensures reliable turn-off at 0 V gate bias and compatibility with standard logic-level drivers
Avalanche-rated design	E_AS = 76 mJ - Guarantees single-pulse ruggedness without derating in inductive load commutation
Integrated body diode	t_rr = 72 ns (typ.), Q_rr = 400 nC (max) - Supports synchronous rectification and reduces snubber requirements

Applications

Server VRM Power Stage	Industrial BLDC Motor Inverter
Use Scenario: High-density 48 V input buck converter supplying CPU core voltage with <1 % ripple and >95 % peak efficiency. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 600 kHz with forced PWM control. Use Value: 2.5 mΩ R_DS(ON) and 21 nC Q_SW reduce total power loss by 18 % vs. legacy 4 mΩ MOSFETs at 40 A load.	Use Scenario: 3-phase inverter driving 1.5 kW permanent-magnet BLDC motor in factory automation equipment. IC Role / Device Role / Timing Role: High-current phase-leg switch handling 80 A peak phase current with 120° commutation. Use Value: 76 mJ E_AS rating prevents failure during regenerative braking transients; TO-220SIS isolation enables direct heatsink mounting.
Telecom DC-DC Brick	EV Onboard Charger Auxiliary Supply
Use Scenario: Isolated 36–75 V input, 12 V/20 A output flyback or active-clamp forward converter in telecom power system. IC Role / Device Role / Timing Role: Primary-side switching transistor with ZVS-assisted turn-on and controlled dv/dt. Use Value: 66 nC Q_oss enables efficient soft-switching down to 200 kHz, reducing EMI filter size by 30 %.	Use Scenario: Auxiliary 12 V supply derived from 400 V battery bus using dual-active-bridge topology in EV onboard charger. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in high-frequency DAB stage operating at 250 kHz. Use Value: Low R_DS(ON) and fast body diode (t_rr = 72 ns) minimize conduction and reverse recovery losses at light-to-medium loads.

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 48 V input buck converter supplying CPU core voltage with <1 % ripple and >95 % peak efficiency.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 600 kHz with forced PWM control.

Use Value: 2.5 mΩ R_DS(ON) and 21 nC Q_SW reduce total power loss by 18 % vs. legacy 4 mΩ MOSFETs at 40 A load.

Use Scenario: 3-phase inverter driving 1.5 kW permanent-magnet BLDC motor in factory automation equipment.

IC Role / Device Role / Timing Role: High-current phase-leg switch handling 80 A peak phase current with 120° commutation.

Use Value: 76 mJ E_AS rating prevents failure during regenerative braking transients; TO-220SIS isolation enables direct heatsink mounting.

Telecom DC-DC Brick

EV Onboard Charger Auxiliary Supply

Use Scenario: Isolated 36–75 V input, 12 V/20 A output flyback or active-clamp forward converter in telecom power system.

IC Role / Device Role / Timing Role: Primary-side switching transistor with ZVS-assisted turn-on and controlled dv/dt.

Use Value: 66 nC Q_oss enables efficient soft-switching down to 200 kHz, reducing EMI filter size by 30 %.

Use Scenario: Auxiliary 12 V supply derived from 400 V battery bus using dual-active-bridge topology in EV onboard charger.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in high-frequency DAB stage operating at 250 kHz.

Use Value: Low R_DS(ON) and fast body diode (t_rr = 72 ns) minimize conduction and reverse recovery losses at light-to-medium loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP30N065T	R_DS(ON) = 3.0 mΩ (V_GS = 10 V); Q_g = 52 nC; TO-220 non-isolated	Lacks isolation; higher gate charge increases driver loss at >300 kHz	Prefer when cost sensitivity outweighs isolation need and layout allows non-isolated heatsinking
STP80NF55-08	R_DS(ON) = 8.0 mΩ; Q_g = 120 nC; TO-220AB, non-isolated	Higher conduction loss (3×) and slower switching limit use to <100 kHz topologies	Acceptable only in low-frequency, high-current linear-regulator replacement or simple motor drives

Compared with IXTP30N065T and STP80NF55-08, the TK3R3A06PL,S4X provides superior high-frequency efficiency due to its 2.5 mΩ R_DS(ON) and 21 nC Q_SW, while its TO-220SIS isolation eliminates creepage concerns in safety-critical auxiliary supplies and simplifies thermal design in compact enclosures.

Availability

TK3R3A06PL,S4X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across automotive Tier-2 subsystems, industrial servo amplifiers, and telecom power modules.

Supply support for TK3R3A06PL,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade robustness.

The TK3R3A06PL,S4X belongs to Toshiba's U-MOS-H series of high-performance N-channel MOSFETs, engineered specifically for high-frequency, high-current switching in server VRMs, industrial motor drives, and telecom power systems where low R_DS(ON) and low gate charge are critical.

FAQ

What is the maximum continuous drain current rating for TK3R3A06PL,S4X at 25 °C case temperature?

The TK3R3A06PL,S4X is rated for 80 A DC drain current when the case temperature (T_c) is maintained at 25 °C. This rating assumes adequate heatsinking to limit channel temperature to 175 °C and is validated per Toshiba's absolute maximum ratings table. At higher case temperatures, current must be derated per the PD–T_c curve in the datasheet. The TK3R3A06PL,S4X achieves this rating using its low 3.57 °C/W channel-to-case thermal resistance and 2.5 mΩ R_DS(ON).

Does TK3R3A06PL,S4X have an isolated package, and what is its isolation voltage rating?

Yes, the TK3R3A06PL,S4X uses the TO-220SIS package with electrically isolated metal tab. Its isolation voltage rating is 2000 V_RMS, verified per safety standards for reinforced insulation. This allows direct mounting to grounded heatsinks without additional insulating hardware. The TK3R3A06PL,S4X is commonly used in isolated DC-DC converters and auxiliary supplies where creepage and clearance compliance is mandatory, such as in telecom and industrial power systems.

What is the typical gate threshold voltage range for TK3R3A06PL,S4X, and how does it affect drive compatibility?

The TK3R3A06PL,S4X has a gate threshold voltage (V_th) range of 1.5 V to 2.5 V at V_DS = 10 V and I_D = 0.7 mA. This enhancement-mode range ensures reliable turn-off at 0 V gate bias and compatibility with both 3.3 V and 5 V logic-level gate drivers. Because the TK3R3A06PL,S4X fully enhances at V_GS ≥ 10 V, it delivers its specified 2.5 mΩ R_DS(ON) only when driven to that level-lower gate voltages increase on-resistance nonlinearly.

Can TK3R3A06PL,S4X be used in avalanche mode, and what is its single-pulse avalanche energy rating?

Yes, the TK3R3A06PL,S4X is rated for single-pulse avalanche operation with E_AS = 76 mJ at T_c = 25 °C. This rating is guaranteed per Toshiba's absolute maximum ratings and applies to inductive energy dissipation during unclamped inductive switching events, such as motor freewheeling or transformer reset. The TK3R3A06PL,S4X does not support repetitive avalanche; designers must ensure transient energy remains within this limit and channel temperature stays below 175 °C during such events.

What are the key dynamic parameters of TK3R3A06PL,S4X relevant to high-frequency switching design?

Key dynamic parameters for high-frequency use include Q_SW = 21 nC (typ.), Q_oss = 66 nC (typ.), C_iss = 5000 pF (typ.), and t_r/t_f = 7/16 ns (typ.). These values enable efficient operation up to 1 MHz in hard-switched topologies and support ZVS in resonant converters. The TK3R3A06PL,S4X also features low Q_gd = 19 nC, which improves gate drive controllability and reduces susceptibility to dv/dt-induced turn-on-critical for reliable high-speed motor control and server VRM designs.

TK3R3A06PL,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK3R3A06PL,S4X FAQ

1.How can I place an order for TK3R3A06PL,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK3R3A06PL,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK3R3A06PL,S4X reliable?

The price and inventory of TK3R3A06PL,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3R3A06PL,S4X is usually 5 days.

3.What payment methods are accepted for TK3R3A06PL,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3R3A06PL,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK3R3A06PL,S4X?

TK3R3A06PL,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK3R3A06PL,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK3R3A06PL,S4X?

For technical support, including TK3R3A06PL,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3R3A06PL,S4X requirements.

6.How does Aetrix verify that TK3R3A06PL,S4X is sourced from the original manufacturer or authorized distributors?

All TK3R3A06PL,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3R3A06PL,S4X meets industry standards.

7.What is the process for return or replacement of TK3R3A06PL,S4X?

All TK3R3A06PL,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK3R3A06PL,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK3R3A06PL,S4X part is unused and in its original packaging.

Return procedure for TK3R3A06PL,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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