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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK3R9E10PL,S1X

Name: TK3R9E10PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK3R9E10PL,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK3R9E10PL,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK3R9E10PL,S1X.pdf

Description:: X35 PB-F POWER MOSFET TRANSISTOR

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Product details

Overview

TK3R9E10PL from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the U-MOS-H series, designed for high-current switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 3.3 mΩ (typ.) at V_GS = 10 V, Q_SW = 26 nC (typ.), Q_oss = 99 nC (typ.), and supports 100 A DC drain current with 100 V V_DSS rating.

For engineers reviewing the TK3R9E10PL datasheet, TK3R9E10PL pinout, TK3R9E10PL application, or TK3R9E10PL equivalent, key selection criteria include low conduction loss, fast switching capability under high-current conditions, thermal performance in TO-220 packages, and suitability for synchronous rectification and hard-switched topologies.

Technical Context

The TK3R9E10PL employs Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and optimized charge characteristics. Its gate threshold voltage (V_th = 1.5–2.5 V) enables reliable enhancement-mode operation with standard 4.5 V or 10 V gate drive, while its low Q_gd (18 nC) and C_rss (45 pF) support high-frequency switching up to several hundred kHz.

Thermally, it features R_th(ch-c) = 0.65 °C/W and is rated for T_ch ≤ 175 °C. The device integrates an intrinsic body diode with t_rr = 117 ns (typ.) and Q_rr = 500 nC (max), making it suitable for freewheeling paths in buck and half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Supports input rails up to 48 V nominal systems with margin for transient spikes in industrial and telecom power supplies.
R_DS(ON)	3.3 mΩ (typ., V_GS = 10 V) - Enables <1 W conduction loss at 50 A, critical for high-efficiency 100+ W DC-DC stages.
Q_SW	26 nC (typ.) - Reduces gate drive power and switching transition time, improving efficiency in 200–500 kHz SMPS designs.
Q_oss	99 nC (typ.) - Low output charge minimizes turn-off energy loss and eases ZVS implementation in resonant topologies.
I_D (DC)	100 A (T_c = 25 °C) - Requires heatsinking per TO-220 mechanical mounting; limited to 100 A by package, not silicon.
t_rr	117 ns (typ.) - Fast body diode recovery reduces cross-conduction loss and EMI in synchronous rectifier applications.
P_D	230 W (T_c = 25 °C) - Defines maximum steady-state power dissipation when case temperature is maintained at 25 °C via heatsink.

Pinout & Package

Package: TO-220 (TOSHIBA 2-10X1A), through-hole, heatsink-connected drain tab, 1.96 g typical mass.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires low-impedance drive (R_GG = 4.7 Ω recommended) to manage Q_g = 96 nC and minimize switching losses.
2	Drain (heatsink)	Main high-side current path; electrically connected to metal tab - must be isolated from chassis unless referenced to system ground.
3	Source	Return path for load current; serves as reference for gate drive in low-side configurations; connects to PCB ground plane for thermal and electrical stability.

Key Features

Feature	Design Value
U-MOS-H trench process	Enables 3.3 mΩ R_DS(ON) in TO-220 without die size penalty, balancing conduction loss and cost for mid-power applications.
Low Q_gd/Q_g ratio	Q_gd = 18 nC / Q_g = 96 nC ≈ 19% - Improves Miller immunity and enables stable operation with moderate gate resistance in hard-switched converters.
Enhancement-mode V_th	1.5–2.5 V - Ensures guaranteed turn-off at 0 V gate bias and compatibility with 3.3 V or 5 V logic-level controllers.
Integrated body diode	t_rr = 117 ns, Q_rr = 500 nC (max) - Permits use in non-synchronous topologies without external diode; supports bidirectional current in H-bridge motor control.

Applications

Server VRM Power Stage	Industrial Motor Drive Inverter
Use Scenario: High-density 12 V input → 0.8–1.8 V output VRMs supplying CPU/GPU cores in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck converter, operating at 300–600 kHz with 50–100 A peak phase current. Use Value: 3.3 mΩ R_DS(ON) and 26 nC Q_SW reduce both conduction and switching losses, enabling >92% efficiency at full load without forced airflow.	Use Scenario: 24–48 V DC bus driving brushed or BLDC motors in factory automation actuators and conveyors. IC Role / Device Role / Timing Role: Half-bridge low-side switch controlling PWM duty cycle and direction; body diode handles inductive flyback during dead-time. Use Value: 117 ns t_rr and 500 nC Q_rr limit shoot-through risk and EMI generation during commutation, improving EMC compliance and reliability.
Telecom DC-DC Brick	EV Onboard Charger Auxiliary Supply
Use Scenario: 48 V input isolated DC-DC module delivering 5/12/24 V auxiliary power in 5G base station cabinets. IC Role / Device Role / Timing Role: Primary-side active clamp or secondary-side synchronous rectifier in forward or LLC topology, handling continuous 60 A loads. Use Value: 99 nC Q_oss and 0.65 °C/W R_th(ch-c) allow efficient operation at elevated ambient temperatures (70–85 °C) without derating.	Use Scenario: Auxiliary 12 V supply derived from 400 V battery in EV onboard chargers, powering fans, controllers, and communication ICs. IC Role / Device Role / Timing Role: High-current buck converter switch stepping down from intermediate 48–60 V rail, operating at 250 kHz with 100 A peak current. Use Value: 100 V V_DSS provides sufficient margin over 60 V rail transients; 100 A DC rating eliminates need for paralleling in compact form factors.

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-density 12 V input → 0.8–1.8 V output VRMs supplying CPU/GPU cores in data center servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck converter, operating at 300–600 kHz with 50–100 A peak phase current.

Use Value: 3.3 mΩ R_DS(ON) and 26 nC Q_SW reduce both conduction and switching losses, enabling >92% efficiency at full load without forced airflow.

Use Scenario: 24–48 V DC bus driving brushed or BLDC motors in factory automation actuators and conveyors.

IC Role / Device Role / Timing Role: Half-bridge low-side switch controlling PWM duty cycle and direction; body diode handles inductive flyback during dead-time.

Use Value: 117 ns t_rr and 500 nC Q_rr limit shoot-through risk and EMI generation during commutation, improving EMC compliance and reliability.

Telecom DC-DC Brick

EV Onboard Charger Auxiliary Supply

Use Scenario: 48 V input isolated DC-DC module delivering 5/12/24 V auxiliary power in 5G base station cabinets.

IC Role / Device Role / Timing Role: Primary-side active clamp or secondary-side synchronous rectifier in forward or LLC topology, handling continuous 60 A loads.

Use Value: 99 nC Q_oss and 0.65 °C/W R_th(ch-c) allow efficient operation at elevated ambient temperatures (70–85 °C) without derating.

Use Scenario: Auxiliary 12 V supply derived from 400 V battery in EV onboard chargers, powering fans, controllers, and communication ICs.

IC Role / Device Role / Timing Role: High-current buck converter switch stepping down from intermediate 48–60 V rail, operating at 250 kHz with 100 A peak current.

Use Value: 100 V V_DSS provides sufficient margin over 60 V rail transients; 100 A DC rating eliminates need for paralleling in compact form factors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	R_DS(ON) = 4.0 mΩ (V_GS = 10 V); Q_g = 85 nC; TO-220 package; 100 V rating.	Higher conduction loss (+21%) and slightly lower switching speed due to higher Q_g.	Preferred where gate drive strength is limited and thermal margin exists; less optimal for high-frequency, high-current designs.
IRF3205PBF	R_DS(ON) = 8.0 mΩ (V_GS = 10 V); Q_g = 120 nC; TO-220; 55 V rating - not voltage-compatible.	Not suitable for 100 V systems; requires redesign of input stage if used as drop-in replacement.	Only viable in ≤55 V applications; not a functional substitute for TK3R9E10PL in 48 V+ systems.

Compared with STP100N10F7 and IRF3205PBF, the TK3R9E10PL offers superior R_DS(ON), lower Q_SW, and full 100 V rating - making it the preferred choice for high-efficiency, high-current, high-voltage switching where thermal and electrical margins are constrained.

Availability

TK3R9E10PL is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across industrial, telecom, and automotive auxiliary power designs.

Supply support for TK3R9E10PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power MOSFET design and reliability engineering.

The TK3R9E10PL belongs to Toshiba's U-MOS-H family, engineered specifically for high-current, high-efficiency switching applications in industrial power supplies and motor control systems where low R_DS(ON) and fast switching are critical.

FAQ

What is the maximum continuous drain current rating for TK3R9E10PL?

The TK3R9E10PL is rated for 100 A DC drain current at T_c = 25 °C. This rating is limited by package capability (TO-220), not silicon. At elevated case temperatures or with reduced heatsinking, derating is required per the PD–Tc curve (Fig. 8.14). For sustained 100 A operation, active cooling or large copper area is essential to maintain T_c ≤ 25 °C. The TK3R9E10PL datasheet specifies ID = 100 A (DC) under these exact thermal conditions.

Does TK3R9E10PL support 4.5 V gate drive for full enhancement?

Yes, the TK3R9E10PL is fully enhanced at V_GS = 4.5 V, with R_DS(ON) = 4.1 mΩ (typ.) specified at that condition. Its gate threshold voltage range (1.5–2.5 V) ensures reliable turn-on with 3.3 V or 5 V logic-level drivers. However, for minimum conduction loss, 10 V gate drive is recommended to achieve the 3.3 mΩ rating. The TK3R9E10PL maintains stable operation across this gate voltage range without oscillation or latch-up.

What is the safe operating area (SOA) limitation for TK3R9E10PL in linear mode?

The TK3R9E10PL SOA is defined in Fig. 8.15 and is limited by both thermal and avalanche constraints. In linear (non-switching) operation, the device must remain within the bounded region where pulse width, voltage, and current combinations avoid exceeding T_ch = 175 °C or single-pulse avalanche energy E_AS = 131 mJ. Continuous linear use is not recommended; the TK3R9E10PL is optimized for switching, not analog regulation.

Is TK3R9E10PL RoHS compliant and lead-free?

Yes, the TK3R9E10PL is RoHS compliant and lead-free, as confirmed by Toshiba's environmental documentation and product marking. It meets EU Directive 2011/65/EU requirements and contains no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. Full material declarations and test reports are available upon request from Toshiba or authorized distributors. The TK3R9E10PL packaging and internal construction adhere to JEDEC J-STD-020 moisture sensitivity level (MSL) standards.

How does the body diode performance of TK3R9E10PL compare to external Schottky diodes?

The TK3R9E10PL's intrinsic body diode has t_rr = 117 ns (typ.) and Q_rr = 500 nC (max), which is significantly slower and higher-loss than most Schottky diodes. While adequate for freewheeling in non-synchronous buck converters or motor drive half-bridges, it is not a replacement for ultrafast or Schottky diodes in high-frequency (>1 MHz) or zero-voltage-switching circuits. For best efficiency, synchronous rectification using a second MOSFET is preferred over relying on the TK3R9E10PL body diode alone.

TK3R9E10PL,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6320 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK3R9E10PL,S1X FAQ

1.How can I place an order for TK3R9E10PL,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK3R9E10PL,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK3R9E10PL,S1X reliable?

The price and inventory of TK3R9E10PL,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3R9E10PL,S1X is usually 5 days.

3.What payment methods are accepted for TK3R9E10PL,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3R9E10PL,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK3R9E10PL,S1X?

TK3R9E10PL,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK3R9E10PL,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK3R9E10PL,S1X?

For technical support, including TK3R9E10PL,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3R9E10PL,S1X requirements.

6.How does Aetrix verify that TK3R9E10PL,S1X is sourced from the original manufacturer or authorized distributors?

All TK3R9E10PL,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3R9E10PL,S1X meets industry standards.

7.What is the process for return or replacement of TK3R9E10PL,S1X?

All TK3R9E10PL,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK3R9E10PL,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK3R9E10PL,S1X part is unused and in its original packaging.

Return procedure for TK3R9E10PL,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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