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Toshiba Semiconductor and Storage TK40A10N1,S4X
- Part No.:
- TK40A10N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK40A10N1,S4X.pdf
- Description:
- MOSFET N-CH 100V 40A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:26
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Product details
Overview
TK40A10N1,S4X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H technology, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 90 A DC drain current, 100 V drain-source breakdown voltage, and ultra-low 6.8 mΩ (typ.) RDS(ON) at VGS = 10 V, enabling high-efficiency operation in industrial power supplies.
For engineers reviewing the TK40A10N1,S4X datasheet, TK40A10N1,S4X pinout, TK40A10N1,S4X application, or TK40A10N1,S4X equivalent, key selection criteria include avalanche energy rating (74 mJ), gate charge (49 nC), thermal resistance (3.57 °C/W channel-to-case), and TO-220SIS package compatibility with heatsink mounting.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H process for optimized conduction and switching trade-offs. Its enhancement-mode threshold (2.0–4.0 V) ensures reliable turn-on with standard logic-level gate drivers, while low Crss (29 pF) and Qgd (14 nC) support fast, low-loss hard-switching up to 100 kHz in synchronous buck topologies.
The integrated body diode exhibits 67 ns reverse recovery time and 130 nC Qrr at 40 A, making it suitable for freewheeling in non-isolated converters. Thermal design must respect Tch ≤ 150 °C, enforced by Rth(ch-c) = 3.57 °C/W and PD = 35 W (Tc = 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage in off-state; supports 48 V input bus designs with 2× safety margin. |
| RDS(ON) (typ.) | 6.8 mΩ at VGS = 10 V - Enables <1.4 W conduction loss at 40 A, critical for thermally constrained PCB layouts. |
| ID (DC) | 90 A - Sustained current capability when mounted on adequate heatsink; defines maximum continuous output in SMPS. |
| EAS | 74 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive load switching transients. |
| Qg | 49 nC - Total gate charge determines driver strength requirement; compatible with 2 A peak gate drivers. |
| Ciss | 3000 pF - Input capacitance impacts gate drive loop stability and EMI filtering needs in high-frequency designs. |
| tr/tf | 14 ns / 21 ns - Fast switching transitions reduce overlap losses; enables >200 kHz operation with careful layout. |
Pinout & Package
TK40A10N1,S4X is housed in a TO-220SIS (JEITA SC-67) package with isolated tab, enabling direct heatsink mounting without insulating hardware. The plastic case provides creepage/clearance compliance for 100 V systems.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires 10 V drive for full enhancement; sensitive to ESD (±20 V max gate-source voltage). |
| 2 | Drain | Main high-side current path; electrically connected to metal tab; must be isolated from heatsink unless using isolated mounting. |
| 3 | Source | Return path for load current; reference node for gate drive; connects to power ground in low-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| U-MOSⅧ-H silicon process | Reduces RDS(ON) × Qg figure-of-merit by 30% vs. prior U-MOS generations, improving efficiency in high-frequency converters. |
| Low Crss (29 pF) | Minimizes Miller-induced shoot-through risk and gate drive power loss, supporting robust 100 V hard-switching. |
| Body diode Qrr = 130 nC | Enables efficient synchronous rectification replacement in flyback and LLC topologies without external Schottky. |
| Avalanche-rated (EAS = 74 mJ) | Eliminates need for external clamping circuits in inductive switching applications like motor gate drivers. |
| RoHS-compliant marking | [[G]]/RoHS [[Pb]] marking confirms lead-free termination and compliance with EU Directive 2011/65/EU. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, high-efficiency 12 V → 1 V conversion for CPU/GPU core supplies in datacenter servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in multiphase buck converter. Use Value: 6.8 mΩ RDS(ON) reduces conduction loss below 1.1 W at 40 A per phase, directly lowering thermal load on VRM PCB. |
Use Scenario: 48 V input to 24 V/12 V isolated or non-isolated step-down supply in factory automation controllers. IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward or half-bridge topology. Use Value: 74 mJ avalanche energy rating permits safe operation during transformer leakage inductance spikes without snubber redesign. |
| Motor Drive Half-Bridge | Renewable Energy Inverter |
Use Scenario: 100 V-class BLDC motor control in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-current leg switch in three-phase inverter bridge. Use Value: 90 A DC rating supports 5 kW continuous motor output with forced-air cooling; TO-220SIS tab isolation simplifies heatsink integration. |
Use Scenario: DC optimizers and microinverters interfacing PV panels (up to 100 V string voltage) with grid-tied AC outputs. IC Role / Device Role / Timing Role: DC-side switching device in interleaved boost stage. Use Value: 3000 pF Ciss and 49 nC Qg enable stable 150 kHz switching with minimal gate drive loss, increasing MPPT efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP90NF10 | RDS(ON) = 11.5 mΩ (typ.), higher Qg = 120 nC, TO-220FP package (non-isolated tab) | Limited to lower-frequency (<50 kHz) applications due to slower switching; requires insulating pad for heatsink mounting. | Choose STP90NF10 only if cost sensitivity outweighs efficiency and thermal performance requirements. |
| IRF3205PBF | RDS(ON) = 8.0 mΩ (typ.), lower EAS = 35 mJ, TO-220AB package (non-isolated tab) | Not rated for repetitive avalanche; unsuitable for inductive switching without external protection. | Select IRF3205PBF only in low-energy, resistive-load switching where avalanche stress is absent. |
Compared with STP90NF10 and IRF3205PBF, TK40A10N1,S4X offers superior conduction efficiency, faster switching, and guaranteed avalanche ruggedness-making it the preferred choice for high-reliability, high-frequency power conversion where thermal headroom and transient robustness are critical.
Availability
TK40A10N1,S4X is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and motor drive half-bridges requiring stable component supply and long-term production continuity.
Supply support for TK40A10N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.
TK40A10N1,S4X belongs to Toshiba's U-MOSⅧ-H power MOSFET product line, engineered specifically for high-efficiency, high-current switching in industrial and computing power supplies.
FAQ
What is the maximum continuous drain current rating for TK40A10N1,S4X?
The TK40A10N1,S4X is rated for 90 A DC drain current under conditions where case temperature (Tc) is maintained at 25 °C with adequate heatsinking. This rating assumes proper thermal management-actual usable current drops to 40 A at Tc = 100 °C per the derating curve in the datasheet. Engineers must verify channel temperature remains ≤150 °C in final layout.
Does TK40A10N1,S4X have an isolated drain tab?
Yes, TK40A10N1,S4X uses the TO-220SIS package, which features an electrically isolated metal tab connected to the drain. This eliminates the need for insulating pads or washers when mounting directly to a heatsink, simplifying thermal design and improving reliability in high-voltage applications.
What is the typical gate threshold voltage range for TK40A10N1,S4X?
The TK40A10N1,S4X has a gate threshold voltage (Vth) range of 2.0 V to 4.0 V, measured at VDS = 10 V and ID = 0.5 mA. This enhancement-mode characteristic ensures predictable turn-on behavior with standard 3.3 V or 5 V logic-level gate drivers, though full enhancement requires ≥10 V VGS to achieve rated RDS(ON).
Can TK40A10N1,S4X be used in avalanche mode?
Yes, TK40A10N1,S4X is fully specified for single-pulse avalanche operation with EAS = 74 mJ (VDD = 80 V, Tch = 25 °C, L = 35.9 µH, IAR = 40 A). This ruggedness allows safe use in inductive switching applications such as motor drives and relay drivers without external clamping components.
Is TK40A10N1,S4X RoHS compliant?
Yes, TK40A10N1,S4X is RoHS compliant, as confirmed by its [[G]]/RoHS [[Pb]] marking per Toshiba's documentation. It meets EU Directive 2011/65/EU requirements for restriction of hazardous substances, including lead-free terminations and compliant packaging materials.
TK40A10N1,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 49 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK40A10N1,S4X FAQ
1.How can I place an order for TK40A10N1,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK40A10N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK40A10N1,S4X reliable?
The price and inventory of TK40A10N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK40A10N1,S4X is usually 5 days.
3.What payment methods are accepted for TK40A10N1,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK40A10N1,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK40A10N1,S4X?
TK40A10N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK40A10N1,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK40A10N1,S4X?
For technical support, including TK40A10N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK40A10N1,S4X requirements.
6.How does Aetrix verify that TK40A10N1,S4X is sourced from the original manufacturer or authorized distributors?
All TK40A10N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK40A10N1,S4X meets industry standards.
7.What is the process for return or replacement of TK40A10N1,S4X?
All TK40A10N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK40A10N1,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK40A10N1,S4X part is unused and in its original packaging.
Return procedure for TK40A10N1,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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