Toshiba Semiconductor and Storage TK40E06N1,S1X

Overview

TK40E06N1,S1X from Toshiba is a silicon N-channel power MOSFET in U-MOSⅧ-H process, designed as a high-current switching element in DC-DC converters and motor drives. It delivers R_DS(ON) = 8.4 mΩ (typ.) at V_GS = 10 V, supports 60 A DC drain current with TO-220 package, and operates up to 60 V V_DSS, enabling efficient 48 V industrial power rails.

For engineers reviewing the TK40E06N1,S1X datasheet, TK40E06N1,S1X pinout, TK40E06N1,S1X application, or TK40E06N1,S1X equivalent, key selection criteria include low conduction loss, avalanche ruggedness (E_AS = 40 mJ), thermal resistance (R_th(ch-c) = 1.84 °C/W), and gate charge (Q_g = 23 nC) for hard-switched SMPS designs.

Technical Context

This MOSFET uses Toshiba's U-MOSⅧ-H trench-gate structure to achieve low R_DS(ON) while maintaining robust avalanche capability and fast switching. Its enhancement-mode threshold (V_th = 2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers.

Dynamic performance is characterized by C_iss = 1700 pF, C_oss = 580 pF, and t_on/t_off = 30/36 ns under V_DD ≈ 48 V, ID = 40 A conditions - optimized for synchronous buck converters operating up to 500 kHz.

Key Specifications

Pinout & Package

TK40E06N1,S1X is housed in a TO-220 package (TOSHIBA designation: 2-10X1A), with the drain connected to the metal tab for direct heatsinking. The case serves as the drain terminal, requiring electrical isolation when mounted to chassis.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IRFZ44NPBF, TK40E06N1,S1X delivers superior conduction efficiency, tighter V_th distribution, and higher avalanche ruggedness - making it optimal for space-constrained, high-reliability 48 V power conversion where thermal management and transient immunity are critical.

Availability

TK40E06N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for TK40E06N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in discrete power MOSFET technology.

TK40E06N1,S1X belongs to Toshiba's U-MOSⅧ-H series - engineered specifically for high-efficiency, high-current DC-DC conversion in industrial, telecom, and computing infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK40E06N1,S1X?

The TK40E06N1,S1X is rated for 60 A DC drain current when case temperature (T_c) is maintained at 25 °C with adequate heatsinking. At higher case temperatures, derating applies per the Safe Operating Area curve (Fig. 8.13). For sustained 60 A operation, thermal design must ensure T_c ≤ 25 °C - typically requiring a low-thermal-resistance heatsink and forced airflow. The TK40E06N1,S1X datasheet specifies this limit under Note 2 of Absolute Maximum Ratings.

Does TK40E06N1,S1X have an integrated body diode, and what are its characteristics?

Yes, TK40E06N1,S1X includes a monolithic body diode with typical forward voltage V_DSF = −1.2 V at I_DR = 40 A and reverse recovery time t_rr = 46 ns (typ.). Its Q_rr is 62 nC, supporting efficient freewheeling in buck and flyback converters. These parameters are measured under specified test conditions (IDR = 40 A, V_GS = 0 V, −dI_DR/dt = 100 A/µs) and are critical for minimizing switching losses in synchronous rectification.

What gate drive voltage is required to fully enhance TK40E06N1,S1X?

The TK40E06N1,S1X is fully enhanced at V_GS = 10 V, where R_DS(ON) reaches its specified 8.4 mΩ (typ.) value. Its gate threshold voltage V_th ranges from 2.0 V to 4.0 V, meaning it begins conducting significantly above 2.0 V but requires ≥10 V for optimal on-state performance. Driving below 8 V increases R_DS(ON) nonlinearly and raises conduction loss - the TK40E06N1,S1X datasheet confirms this behavior in Fig. 8.5 and Section 6.1.

Is TK40E06N1,S1X suitable for avalanche operation, and what is its rated energy?

Yes, TK40E06N1,S1X is rated for single-pulse avalanche with E_AS = 40 mJ at T_ch = 25 °C (per Absolute Maximum Ratings Table, Note 1). This rating applies under defined test conditions (V_DD = 48 V, L = 19.2 µH, I_AR = 40 A) and enables reliable operation during inductive switching transients. However, repeated avalanche stress degrades reliability - the TK40E06N1,S1X reliability guidelines recommend limiting avalanche use to infrequent fault conditions.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK40E06N1,S1X?

The channel-to-case thermal resistance R_th(ch-c) for TK40E06N1,S1X is 1.84 °C/W (maximum), measured under JEDEC-standard mounting conditions. This value is critical for calculating junction temperature rise: T_j = T_c + (P_diss × R_th(ch-c)). The TK40E06N1,S1X datasheet specifies this in Section 5 (Thermal Characteristics) and assumes proper mechanical mounting torque and thermal interface material on the TO-220 tab.